bav99
Abstract: BAV-99S-E6327 bav99 infineon
Text: BAV99. Silicon Switching Diode • For high-speed switching applications • Series pair configuration • BAV99S / U: For orientation in reel see package information below • Pb-free RoHS compliant package1) • Qualified according AEC Q101 BAV99 BAV99W
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BAV99.
BAV99S
BAV99
BAV99W
BAV99U
BAV99U
BAV-99S-E6327
bav99 infineon
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BAW156
Abstract: BCW66
Text: BAW156. Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times • Common anode configuration BAW156 ! , , Type BAW156 Package SOT23 Configuration common anode Marking JZs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAW156.
BAW156
BAW156
BCW66
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BAV99U
Abstract: SC74
Text: BAV99U Silicon Switching Diode Array • For high-speed switching applications 5 4 6 • Connected in series • Internal galvanic isolated diodes 3 in one package C1/A2 C2 A1 6 5 4 2 1 VPW09197 Di2 Di1 1 2 3 A1 C2 C1/A2 EHA07287 Type Marking BAV99U A7s
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BAV99U
VPW09197
EHA07287
Jun-29-2001
EHB00078
EHB00075
BAV99U
SC74
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EHA07182
Abstract: BAV70S VPS05604 6C12 5a2 DIODE C2A26 marking 5a2
Text: BAV 70S Silicon Switching Diode Array 4 5 • For high-speed switching applications 6 • Internal galvanic isolated diode arrays in one package • Common cathode 2 3 1 VPS05604 C1/C2 A2 6 5 A1 4 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV 70S A4s
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VPS05604
EHA07182
OT-363
Tstg10
Oct-07-1999
EHB00068
EHB00065
EHA07182
BAV70S
VPS05604
6C12
5a2 DIODE
C2A26
marking 5a2
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BAS21 SOD323
Abstract: BAS21-03W
Text: BAS21-03W 2 Silicon Switching Diode 1 For high-speed switching applications High breakdown voltage VPS05176 Type BAS21-03W Marking D Pin Configuration 1=C 2=A Package SOD323 - Maximum Ratings Parameter Symbol Diode reverse voltage VR 200 Peak reverse voltage-
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BAS21-03W
VPS05176
OD323
EHB00028
Jul-13-2001
BAS21 SOD323
BAS21-03W
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A1 SOT143
Abstract: VPS05178 BAW101 EHA07008
Text: BAW101 Silicon Switching Diode Array 3 Electrically insulated high-voltage medium-speed diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAW101 JPs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT143 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAW101
VPS05178
EHA07008
OT143
EHN00019
Aug-20-2001
EHB00104
EHB00103
A1 SOT143
VPS05178
BAW101
EHA07008
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VSO05561
Abstract: No abstract text available
Text: BAW 56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type Marking BAW 56W A1s Pin Configuration 1 = C1 2 = C2 Package 3 = A1/A2 SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage
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VSO05561
EHA07187
OT-323
Oct-08-1999
EHB00093
EHB00090
VSO05561
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marking jys
Abstract: BAV199 JYs marking transistor BAV 199 SOT23 JYs sot23 BCW66
Text: BAV199. Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times • Series pair configuration • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAV199 ! , , Type Package Configuration Marking BAV199
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BAV199.
BAV199
marking jys
BAV199
JYs marking transistor
BAV 199 SOT23
JYs sot23
BCW66
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BAV74
Abstract: No abstract text available
Text: BAV74 Silicon Switching Diode Array 3 For high-speed switching applications Common cathode 2 1 VPS05161 3 1 2 EHA07004 Type Marking BAV74 JAs Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAV74
VPS05161
EHA07004
EHB00071
EHB00072
Jul-31-2001
EHB00073
BAV74
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A1s sot23
Abstract: A1S diode BAW56 diode a1s Marking a1s BAW56S a1s marking BAW56T BAW56U BAW56W
Text: BAW56. Silicon Switching Diode • For high-speed switching applications • Common anode configuration BAW56 BAW56T BAW56W BAW56S BAW56U $ ! " # , ! , , " , Type BAW56 BAW56S BAW56T BAW56U BAW56W , , ! Package SOT23 SOT363 SC75 SC74 SOT323 Configuration
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BAW56.
BAW56
BAW56T
BAW56W
BAW56S
BAW56U
A1s sot23
A1S diode
BAW56
diode a1s
Marking a1s
BAW56S
a1s marking
BAW56T
BAW56U
BAW56W
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BAW78M
Abstract: SCT595 78-AD
Text: BAW78M Silicon Switching Diode 4 Switching applications 5 High breakdown voltage 3 2 1 VPW05980 Type Marking BAW78M GDs Pin Configuration 1=A Package 2 = C 3 n.c. 4 n.c. 5 = C SCT595 Maximum Ratings Parameter Symbol Diode reverse voltage VR 400 Peak reverse voltage
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BAW78M
VPW05980
SCT595
Aug-21-2001
EHB00047
EHB00048
BAW78M
SCT595
78-AD
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marking CODE JTS
Abstract: BAS28 marking CODE JTS 56 BAS28W BFP181 BGA420
Text: BAS28. Silicon Switching Diode • For high-speed switching applications • Electrical insulated diodes • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS28/W " ! , , Type Package Configuration Marking BAS28 BAS28W SOT143 SOT343
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BAS28.
BAS28/W
BAS28
BAS28W
OT143
OT343
BAS28,
marking CODE JTS
BAS28
marking CODE JTS 56
BAS28W
BFP181
BGA420
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bav99
Abstract: A7s SOT23 SOT-23 marking A7s
Text: BAV99. Silicon Switching Diode • For high-speed switching applications • Series pair configuration • BAV99S / U: For orientation in reel see package information below • Pb-free RoHS compliant package1) • Qualified according AEC Q101 BAV99 BAV99W
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BAV99.
BAV99S
BAV99
BAV99W
BAV99S
BAV99U
bav99
A7s SOT23
SOT-23 marking A7s
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Untitled
Abstract: No abstract text available
Text: SMBD914/MMBD914. Silicon Switching Diode • For high-speed switching applications • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 SMBD914/MMBD914 ! Type SMBD914/MMBD914 Package SOT23 Configuration single Marking s5D Maximum Ratings at TA = 25°C, unless otherwise specified
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SMBD914/MMBD914.
SMBD914/MMBD914
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BAS28
Abstract: No abstract text available
Text: BAS28. Silicon Switching Diode For high-speed switching applications Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAS28.
BAS28/W
BAS28
BAS28W
OT143
OT343
BAS28,
BAS28W,
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sot143 marking code u1s
Abstract: No abstract text available
Text: BGX50A. Silicon Switching Diode Array • Bridge configuration • High-speed switching diode chip BGX50A " ! , ! , " , , Type BGX50A Package SOT143 Configuration bridge Marking U1s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter
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BGX50A.
BGX50A
OT143
sot143 marking code u1s
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A1s sot23
Abstract: BAW56S E6327 MARKING CODE A1s
Text: BAW56. Silicon Switching Diode • For high-speed switching applications • Common anode configuration BAW56 BAW56T BAW56W BAW56S BAW56U 6 3 4 5 D 3 D 1 D 1 1 D 4 D 2 2 Type BAW56 BAW56S BAW56T BAW56U BAW56W 1 D 2 2 3 Package SOT23 SOT363 SC75 SC74 SOT323
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BAW56.
BAW56
BAW56T
BAW56W
BAW56S
BAW56U
BAW56U
A1s sot23
BAW56S E6327
MARKING CODE A1s
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BAS28
Abstract: No abstract text available
Text: BAS28. Silicon Switching Diode For high-speed switching applications Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAS28.
BAS28/W
BAS28
BAS28W
OT143
OT343
BAS28,
BAS28W,
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Untitled
Abstract: No abstract text available
Text: SMBD7000/MMBD7000. Silicon Switching Diode Array • For high-speed switching applications SMBD7000/MMBD7000 3 D 1 D 2 1 2 Type SMBD7000/MMBD7000 Package SOT23 Configuration series Marking s5C Maximum Ratings at TA = 25°C, unless otherwise specified Parameter
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SMBD7000/MMBD7000.
SMBD7000/MMBD7000
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BAV70S
Abstract: BAV70 INFINEON BAV70U
Text: BAV70. Silicon Switching Diode • For high-speed switching applications • Common cathode configuration BAV70 BAV70F BAV70L3 BAV70T BAV70W BAV70S BAV70U 6 3 4 5 D 3 D 2 D 1 D 1 1 D 4 2 Type BAV70 BAV70F* BAV70L3 * BAV70S BAV70T BAV70U BAV70W 1 D 2 2 3
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BAV70.
BAV70
BAV70F
BAV70L3
BAV70T
BAV70W
BAV70S
BAV70U
BAV70F*
BAV70 INFINEON
BAV70U
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Untitled
Abstract: No abstract text available
Text: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes BAW101 4 3 D 1 1 D 2 2 Type BAW101 Package SOT143 Configuration parallel Marking JPs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value
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BAW101.
BAW101
OT143
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Untitled
Abstract: No abstract text available
Text: SMBD914/MMBD914. Silicon Switching Diode • For high-speed switching applications SMBD914/MMBD914 ! Type SMBD914/MMBD914 Package SOT23 Configuration single Marking s5D Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage
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SMBD914/MMBD914.
SMBD914/MMBD914
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BAV199
Abstract: No abstract text available
Text: BAV199. Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times • Series pair configuration BAV199 ! , , Type BAV199 Package SOT23 Configuration series Marking JYs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAV199.
BAV199
BAV199,
BAV199
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marking CODE JTS
Abstract: BAS28
Text: BAS28. Silicon Switching Diode For high-speed switching applications Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAS28.
BAS28/W
BAS28
BAS28W
OT143
OT343
BAS28,
BAS28W,
marking CODE JTS
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