EUDYNA GAAS FET RF TRANSISTOR Search Results

EUDYNA GAAS FET RF TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
LXMS21NCMH-230	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag
LXMSJZNCMH-225	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag
GRM-KIT-OVER100-DE-D	Murata Manufacturing Co Ltd	0805-1210 over100uF Cap Kit
LBUA5QJ2AB-828	Murata Manufacturing Co Ltd	QORVO UWB MODULE
LBAA0QB1SJ-295	Murata Manufacturing Co Ltd	SX1262 MODULE WITH OPEN MCU

EUDYNA GAAS FET RF TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FHX02X Abstract: GaAs FET HEMT Chips FHR02X transistor hemt Contextual Info: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)	Original	FHR02X 18GHz FHX02X 4-22GHz GaAs FET HEMT Chips FHR02X transistor hemt	PDF
FHR02X Abstract: FHX02X GaAs FET HEMT Chips Contextual Info: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)	Original	FHR02X 18GHz FHX02X 4-22GHz FHR02X GaAs FET HEMT Chips	PDF
eudyna GaAs FET RF Transistor Abstract: high frequency transistor ga as fet transistor on 4959 eudyna fet Contextual Info: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor	Original	FHX45X 12GHz FHX45X 2-18GHz eudyna GaAs FET RF Transistor high frequency transistor ga as fet transistor on 4959 eudyna fet	PDF
eudyna GaAs FET RF Transistor Contextual Info: FHX13X, FHX14X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX13X, FHX14X are Super High Electron Mobility Transistor	Original	FHX13X, FHX14X 12GHz FHX13) 12GHz FHX14X 2-18GHz eudyna GaAs FET RF Transistor	PDF
GaAs FET HEMT Chips Abstract: FHX35 FHX35X eudyna GaAs FET RF Transistor Contextual Info: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended	Original	FHX35X 12GHz FHX35X 2-18GHz Pow4888 GaAs FET HEMT Chips FHX35 eudyna GaAs FET RF Transistor	PDF
Contextual Info: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended	Original	FHX35X 12GHz FHX35X 2-18GHz	PDF
fujitsu hemt Abstract: FHX35X rm 702 627 Contextual Info: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended	Original	FHX35X 12GHz FHX35X 2-18GHz Power4888 fujitsu hemt rm 702 627	PDF
FHX45X Abstract: high power FET transistor s-parameters high frequency transistor ga as fet S2101 fujitsu hemt Contextual Info: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor	Original	FHX45X 12GHz FHX45X 2-18GHz high power FET transistor s-parameters high frequency transistor ga as fet S2101 fujitsu hemt	PDF
fet 741 Abstract: P0110002P KP022J P0120002P RR0816 pin details of FET eudyna transistors catalog ic 4075 or gate Contextual Info: Technical Note P0120002P 250mW GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +22 dBm output power · Up to +41dBm Output IP3 · High Drain Efficiency · 15dB Gain at 2.1GHz · SOT-89 SMT Package (Pb-free)	Original	P0120002P 250mW 41dBm OT-89 P0120002P fet 741 P0110002P KP022J RR0816 pin details of FET eudyna transistors catalog ic 4075 or gate	PDF
KP027J Abstract: P0120007P RR0816 Contextual Info: P0120007P Technical Note 250mW GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +22 dBm output power · Up to +41dBm Output IP3 · High Drain Efficiency · 15dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure	Original	P0120007P 250mW 41dBm OT-89 P0120007P KP027J RR0816	PDF
P0110003P Abstract: P0120003P ISO-14001 KP023J RR0816 GaAS fet sot89 Contextual Info: P0120003P Technical Note 800mW GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +27 dBm output power · Up to +43dBm Output IP3 · High Drain Efficiency · 12dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure	Original	P0120003P 800mW 43dBm OT-89 P0120003P P0110003P ISO-14001 KP023J RR0816 GaAS fet sot89	PDF
eudyna transistors catalog Abstract: ISO-14001 KP024J P0120004P RR0816 marking c7 sot-89 SOT89 marking 1Ko PIN DIAGRAM of ic 4028 Contextual Info: P0120004P Technical Note 1.5W GaAs Power FET Pb-Free Type ♦Features 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +30 dBm output power · Up to +45dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package	Original	P0120004P 45dBm OT-89 P0120004P eudyna transistors catalog ISO-14001 KP024J RR0816 marking c7 sot-89 SOT89 marking 1Ko PIN DIAGRAM of ic 4028	PDF
P012 Abstract: ISO-14001 KP028J P0120008P RR0816 marking c7 sot-89 Contextual Info: P0120008P Technical Note 1W GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +28 dBm output power · Up to +43dBm Output IP3 · High Drain Efficiency · 12dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure	Original	P0120008P 43dBm OT-89 P0120008P P012 ISO-14001 KP028J RR0816 marking c7 sot-89	PDF
P0110009P Abstract: Susumu RL series part Marking KP029J P0120009P RR0816 marking c7 sot-89 Contextual Info: P0120009P Technical Note 2W GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +31 dBm output power · Up to +48dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure	Original	P0120009P 48dBm OT-89 P0120009P P0110009P Susumu RL series part Marking KP029J RR0816 marking c7 sot-89	PDF

FHX04X Abstract: FHX04 FHX05X FHX06X GaAs FET HEMT Chips hemt low noise die Contextual Info: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility	Original	FHX04X, FHX05X, FHX06X 12GHz FHX04) FHX06X 2-18GHz FHX04X FHX04 FHX05X GaAs FET HEMT Chips hemt low noise die	PDF
FHX04 Abstract: FHX04X FHX05X FHX06X GaAs FET HEMT Chips hemt low noise die Contextual Info: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility	Original	FHX04X, FHX05X, FHX06X 12GHz FHX04) FHX06X 2-18GHz FHX04 FHX04X FHX05X GaAs FET HEMT Chips hemt low noise die	PDF
Contextual Info: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor	Original	FHX45X 12GHz FHX45X 2-18GHz	PDF
Contextual Info: FHX13X, FHX14X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX13X, FHX14X are Super High Electron Mobility Transistor	Original	FHX13X, FHX14X 12GHz FHX13) FHX14X 2-18GHz	PDF
FHX45X Abstract: GaAs FET HEMT Chips GaAs FET chip Contextual Info: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor	Original	FHX45X 12GHz FHX45X 2-18GHz GaAs FET HEMT Chips GaAs FET chip	PDF
FHX13X Abstract: FHX13 FHX14X 564 fet eudyna GaAs FET RF Transistor power amplifier 2-18GHZ high power FET transistor s-parameters high power transistor s-parameters GaAs FET HEMT Chips Contextual Info: FHX13X, FHX14X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX13X, FHX14X are Super High Electron Mobility Transistor	Original	FHX13X, FHX14X 12GHz FHX13) FHX14X 2-18GHz FHX13X FHX13 564 fet eudyna GaAs FET RF Transistor power amplifier 2-18GHZ high power FET transistor s-parameters high power transistor s-parameters GaAs FET HEMT Chips	PDF

EUDYNA GAAS FET RF TRANSISTOR Search Results

EUDYNA GAAS FET RF TRANSISTOR Result Highlights (5)

EUDYNA GAAS FET RF TRANSISTOR Datasheets Context Search

FHX02X

FHR02X

eudyna GaAs FET RF Transistor

eudyna GaAs FET RF Transistor

GaAs FET HEMT Chips

fujitsu hemt

FHX45X

fet 741

KP027J

P0110003P

eudyna transistors catalog

P012

P0110009P

FHX04X

FHX04

FHX45X

FHX13X