F 1010 E Search Results

trw tdc 1010

Abstract: trw tdc 1010j TRW tdc 1010AJC weitek 16x16 multiplier "Pin for Pin" 1010B 16X16 WTL1010
Contextual Info: 004483 f l X - _ - ' ' " -IN N O V A T IO N S IN M IC R O S Y S T E M T E C H N O L O G Y " WTL 1010/1010A/101 OB Description The W T L 1010 is a 1 6 X 1 6 parallel multiplieraccumulator M A C . Fabricated using N M O S silicon gate technology, the W TL lO lO offers a low

Contextual Info: 1010-1-F LOGIC DIAGRAM CIRCUIT SCHEMATIC F PACKAGE FEATURES •Fast propagation delay = 20 ns TYP ■Complementary OR/NOR outputs — excellent lor driving twisted pairs ■Common input tor gating ■Low power dissipation = 100 mW /package TYP no load * High fanout capability — can drive 50 ohm lines

2D 1002

Abstract: KU1004F 10MSA Diodes de redressement KU1008F
Contextual Info: fast recovery rectifier diodes ^ 100 A diodes de redressement rapide ^ 100 A Types 100 A KU KU KU KU KU KU KU KU KU / 1002 1003 1004 1006 1008 1010 1012 1014 1015 Tqqsq F, F, F, F, F, F, F, F, F, >0 Vr r m •f s m 10 ms vF A (V) (A) (V) 60°C Tj / if max

10001x

Abstract: Ox010 pbs photoconductor X005
Contextual Info: 6564348 NEW ENGLAND NEU ENGLAND _ 03E 0 0023 03 N.E.P. D f - U II DE I t.St=.M34fl □□□□□53 7 | ~ NEW ENGLAND PHOTOCONDUCTOR SERIES - A, B, C, F PLATE CELL PbS Electrical Type - Rm, Temp 25°C D* Pk., 750,1 x 1010 Wavelength Cut-off Microns

Contextual Info: Hauptübersicht | Index Main Overview | Index Technik/Technic Technische Daten der "LED-Technologie" Technical Data of "LED-Technology" Frequenz 104 106 108 1010 Mittelwelle f in [Hz] Kosmische Strahlen 1012 Mikrowelle 1014 1016 1018 ultraviolett Infrarot

TMC2010

Abstract: TDC1010 Booth encoder 64 bit booth multiplier tsx 37 22 1N3062 AMD29510 WTL1010 wallace tree multiplier WTL-1010
Contextual Info: Hybrid Systems W W u c m\J m CORPORATION | | ^ | I CM OS 16 x 16 Multiplier/Accumulator ' DESCRIPTION The HS 1010 is a 16 x 16 parallel m u ltip lie r-a c c u m u la to r M AC . F abricated using a d v a n c e M o ly b d e n u m C M O S VLSI te c h n o lo g y , the HS 1010 is pin -fo r-p in fu n ctio n a l

Contextual Info: R aM T R O N \ FM 1008/1108/1208/1308/1408 FRAM 1,024-16,384-Bit Nonvolatile Static RAM Family c o f^ p o ira rio M Product Preview F e a tu re s • Nonvolatile CMOS Static RAM with > 10 Year Data Retention Without Power • Endurance Rated at >1010 Read/Write Cycles

CODE m6

Abstract: MS124 MS-033 diode code m10 MS008 MS003
Contextual Info: DS0041 Issue 4 Page 1 of 2 MTN/1010 Series Low cost, general purpose industrial accelerometer Applications • Data-collector • Heavy industry • Paper machinery 48mm Ø 22mm 25mm A/F Technical Specification Standard Sensitivity Frequency Response Mounted Base Resonance

SC2334

Abstract: fls09 1444 G 92-0151 2SA1010
Contextual Info: NEC j \ f x > i / < 7 - Silicon Power Transistor A 2 P N P I t°i'+S'T./UJKS«' U 3 > h v S A 1 1 ^ S i i S J a iS W B E x - f ' y f v iS t ffl PNP Silicon Epitaxial Transistor High Speed High Voltage Switching Industrial Use 2 S A 1010 i i g J t i S i t B E X ^

Contextual Info: FM24C04 4Kb F RAM ^ R a M lR O N Serial Memory Features 4K • • • • • bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High endurance 10 Billion 1010 read/writes 10 year data retention at 55° C No write delay Advanced high-reliability ferroelectric process

Contextual Info: FM25160 16Kb F R A M 6 R 3 M 1 R O N Serial M em ory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion (1010) read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process

Contextual Info: FM25040 4K b F R A M R3M 1RO N Serial M em ory Features 4K • • • • • bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High endurance 10 Billion 1010 read/writes 10 year data retention at 55° C No write delay Advanced high-reliability ferroelectric process

Contextual Info: FM1808 256K b Bytewide F R A M töRaMTRON M em ory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High endurance 10 Billion (1010 read/writes • 10 year data retention at 55° C • NoDelay write • Advanced high-reliability ferroelectric process

Contextual Info: FM24C16 16Kb F R A M R aM T R O N Serial M em ory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process

kbpo

Abstract: pc1008 B 80 bridge rectifier
Contextual Info: S7E D m T D D n S H DDDDmt, 577 « » I O T KBPC 1000.1010 / B.-10 Silicon Rectifier Bridge S0'0î8'û Nominal current Repetitive peak reverse voltage 10 A 50.1000 V DIOTEC ELEKTRONISCHE All dimensions in mm. Type "F" - 18. ±0.5— ^ M e t a l case, w e i g h t 26g

M4E094-HA

Abstract: M4E074-GA M6E068-EC M4E068-BF M6E110-GF DOL wiring diagram motor M4E068 M4E068-DF M4E074 three speed single phase motor wiring diagram
Contextual Info: AC plate-mounted axials size range Ø 250-630mm o C kg 1010 1400 47 0.21 37 45 3.4 B 44 W4E315-DP18-38 M4E068-DF 2 230 50 2440 1410 120 0.56 42 55 5.5 B 44 W4E350-DP06-39 M6E068-EC 3 230 50 3250 1365 180 0.78 47 60 6.8 F 44 W4E400-DS02-38 M4E074-GA 4 230 50

22302

Abstract: DK 04 tsm 1002 BZ147 22301B
Contextual Info: fast switching thyristors > 1OOArms thyristors rapides > lO O Aeff THOMSON-CSF - Tamb Types •o ■t s m * VT N |/ 10 ms Vr r m V DR M A 100 A rm s / l e a s e = 80°C DK DK DK DK DK DK DK DK DK 1001 1002 1004 1006 1008 1010 1012 1014 1016 F (B,Z,Y,A,X,W)

TEDEA 1010

Abstract: tedea Tedea-Huntleigh 1010 TEDEA-HUNTLEIGH model 1010 cost single point load cell Tedea-Huntleigh* 1015 Load cells tedea huntleigh 4621 schematic weigh scale low cost Weighing scale circuit
Contextual Info: 1010 7000893 TEDEA HUNTLEIGH EXCELLENCE IN LOAD CELLS M odel 1 0 10 is a single p o in t load cell designed fo r direct m o u n tin g o f lo w cost, low capacity w e ig h in g platform s. Its use in large platform s, com bined w ith its high accuracy and lo w cost,

Contextual Info: Frani: DocuFACTSttm] Ph# 949-253-743B To: 16038801932 Pomona 8-1 9 -9 9 1:28pm p. 8 o f 10 Model 6264 Probe Tip Alligator Clip Test Adapter • Alligator Test Adapter has been designed to IEC 1010, which is the latest international safety standard. • Snaps onto Pomona’s DMM Probes with .080" 2 mm O.D. Tips.

Contextual Info: 13E D | a 3 tt,DU D 0 Q 2 1 Q 3 3 SOLID STATE DEVICES INC PR E LIM IN AR Y DATA SHEET r - 3 3 - 1 5 - sSSlËrll S F T 1010 SFT1012 SFT1014 2 100 AMP HIGH ENERGY NPN TRANSISTORS V ceo I 1-1830 V iilli’ v Vu'« Avoniio L,i Miuictd CnliUn ni.i 90638 i2 1 3 i 921-9660

BGA292-P-2727

Abstract: MLGA100-L-1010 005MAX
Contextual Info: Unit:mm FLGA424-C-1717 MLGA100-L-1010 MLGA239-C-1111 ± ± ± 9.00max 11.00±0.15 0.05 ± 0.40 0.625±0.2 0.65 T R P N M L K J H G F E D C B A ± 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 4- φ1.05 0.625±0.2 ± 16.00 φ 1 2 3 4 5 6 7 8 9 101112131415161718192021

U176

Abstract: N72594
Contextual Info: E E 8,6 18,9 6,58 0 , 9 . 0 , 1. 6,5 0,6 nw v a l u e see table! € I— □ oo CNJ € lO C J 0.1 □ 1E= oo 4 s o l d e r pads I n t e r f a c e acc. to DI N72594 11 CO -m R 0 , 4 ( 4x) Ordering no.: 3849.SùBA.1010.OOZ.99 2,8 01.25% ?* (4x) 6,5 p r o p os a l

SW-419

Contextual Info: V M f c c ü M W an A M P co m pa n y GaAs SP4T Terminated Switch DC - 2 GHz S W -4 1 9 .394-.419 10.00-10,65 1^1010(0251M IB~fo I SO-24 Features • Y vry L o w P o w e r (,'o n M im p tio n : MX) pW • L o w In s e rtio n Loss: l dB • H ig h Is o la tio n : 2S clH u p to 2 ( ï l l z

ba1s

Abstract: C704DD7B DDG173D
Contextual Info: T R I Q U I N T S E M I C O N D U C T O R , I N C TOSI GA9103 265MBaud Fibre Channel ENDEC Features The FC -265 GA9101, GA9102 and GA9103 provides a com prehensive electrical and physical interface fo r Fiber Channel. These chips are designed to operate at 265.625 Megabaud, one o f the operating speeds