FET 1125 Search Results

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

Contextual Info: PTFA181001GL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 100 W, 1805 – 1880 MHz Description The PTFA181001GL is a 100-watt LDMOS FET designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz

TMK063CH

Abstract: JMK107BJ106KG VSON010V3030 LMK212BJ106M bd96
Contextual Info: Single-chip Type with Built-in FET Switching Regulator Series High-efficiency Step-up Switching Regulator with Built-in Power MOSFET BD9641NUV No.09027EAT27 ●Description BD9641NUV is synchronous rectification 1ch boost Switching converter built in Power MOS FET. Input voltage is 2.5V～5.5V.

d683

Abstract: elna 50v BCP56 LM7805 PTFA181001GL
Contextual Info: PTFA181001GL Use GL only Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 100 W, 1805 – 1880 MHz Description The PTFA181001GL is a 100-watt LDMOS FET designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz

M5238

Abstract: M5238A
Contextual Info: MITSUBISHI ICS AV COMMON M5238AL/P/FP DUAL LOW-NOISE J-FET INPUT OPERATIONAL AMPLIFIERS DESCRIPTION The M5238 is a semiconductor integrated circuit designed as a low-noise Bi-FET operational amplifier which adopts J-FETs in the input stage. Noise reduction characteristic in

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

Contextual Info: blE » • MM'ìbeDS D013bflb 1T2 PMS0502C — IHITM HITA CHI/ OPTOELECTRONICS SILICON N-CHANNEL POWER MOS FET MODULE HIGH SPEED POWER SWITCHING (7) 54 ± 0.5 54+0.5 17) 3- 06.6 ±0.2 ■ FEATURES A • Equipped with Power MOS FET • Low On-Resistance • High Speed Switching

2SK995

Abstract: FET 1125 3A 440V TF65
Contextual Info: Power F-MOS FET 2SK995 2SK995 Silicon N-channel Power F-MOS FET Package Dimensions •Features Unit: mm • Low ON resistance R ds on : R (on) = 1 .2 il (typ.) ds • High switching rate : tf= 6 5 n s (typ.) • No secondary breakdown • High breakdown voltage, large power

riaa preamplifier circuit diagram

Abstract: phono preamplifier circuit diagram -riaa phono preamplifier circuit diagram riaa eq riaa M5240P riaa low noise JFET Input Operational Amplifiers phono riaa
Contextual Info: MITSUBISHI CUNEAR ICs> M 5240P DUAL LOW-NOISE J-FET INPUT OPERATIONAL AMPLIFIERS DESCRIPTION The M5240P is a sem iconductor integrated circuit designed as a low -noise Bi-FET operational am p lifier which adopts J-FE Ts in the input stage. The d e vice com es in a 16-pin

2SK99

Abstract: 2SK995 2SK9 J1L diode
Contextual Info: Power F-MOS FET 2SK995 2SK995 Silicon N-channel Power F-MOS FET Package Dimensions •Features Unit: mm • Low ON resistan ce R ds on : R 5.2max. (on) = 1 .2 il (typ.) ds 6.9min. • High switching ra te : t t = 6 5 n s (typ.) 3.2 • No secondary breakdow n

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has

Contextual Info: SO T8 83 PMZ600UNE 20 V, N-channel Trench MOSFET 9 May 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: SO T8 83 PMZ600UNE 20 V, N-channel Trench MOSFET 26 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench

e304 fet

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
Contextual Info: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that

Contextual Info: DF N1 10B -6 PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 7 October 2013 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic

Contextual Info: MITSUBISHI <Dig./Ana. INTERFACE M 51995P.FP SWITCHING REGULATOR CONTROL DESCRIPTION M51995 is the primary switching regulator controller which is especially designed to get the regulated DC voltage from AC power supply. This 1C can directly drive the MOS-FET w ith fast rise and

PF0012

Abstract: HITACHI PF0012
Contextual Info: PF0012 blE D • 44^205 0013b01 3Sfl ■ HIT4 HITACHI/ OPTOELECTRONICS HIGH FREQUENCY POWER MOS FET MODULE UHF Band 872-905 MHz ■ FEATURES • • • Include Input and Output Matching Circuit Easy to Control Output Power Superior to Stability at Load Mismatching

MGF4310

Abstract: 6020M f491
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4910F Series S U P E R LOW NOISE InGaAs HEMT DESCRIPTION The M GF4910F series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic

SIT Static Induction Transistor

Abstract: transistor 406 specification Static Induction Transistor SIT transistor sit "silicon carbide" FET static induction transistor "static induction transistor" sit transistor electrolytic capacitor, .1uF 0405SC-1500M
Contextual Info: 0405SC-1500M Rev B 0405SC-1500M 1500Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55ST FET Common Gate The 0405SC-1500M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION

MOSFET TRANSISTOR SMD MARKING CODE 11

Abstract: NXP SMD TRANSISTOR MARKING CODE s1
Contextual Info: DF N1 10B -6 PMDXB600UNE 20 V, dual N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: 0405SC-1500M Rev B 0405SC-1500M 1500Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55ST FET Common Gate GENERAL DESCRIPTION The 0405SC-1500M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION

Contextual Info: 0405SC-2200M Rev A1 0405SC-2200M 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55TW-FET Common Gate GENERAL DESCRIPTION The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION

electrolytic capacitor, .1uF

Abstract: electrolytic capacitor, 1uF SIT Static Induction Transistor capacitor 330pF ATC "silicon carbide" FET CHIP transistor 348 Static Induction Transistor SIT "Static Induction Transistor" 425-450MHz static induction transistor
Contextual Info: 0405SC-2200M Rev A1 0405SC-2200M 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55TW-FET Common Gate The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION

Contextual Info: 2SK2796 L , 2SK2796 (S) Silicon N Channel MOS FET High Speed Power Switching HITACHI Features • Low on-resistance EWn) = 0.12Otyp. • 4V gate drive devices. • High speed switching Outline DPAK i # 1. 2. 3. 4. 1 122 G ate Drain Source Drain ADE-208-534 A