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    L3 Harris Narda-Miteq AFPD2-00350055-15-14P-LIM

    AMPLIFIER/LIMITER, DUAL OUTPUT
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    DigiKey AFPD2-00350055-15-14P-LIM Box
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    Omega Engineering FPD2005

    Al Gr Mtr W/Pls 0.5 - 60 Ce Rohs Compliant: Yes |Omega FPD2005
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    Newark FPD2005 Bulk 1 1
    • 1 $4815.21
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    Omega Engineering FPD2001

    Liquid Flow Sensor, 3Lpm, 345Bar, 28Vdc; Flow Rate Min:0.01L/Min; Flow Rate Max:3L/Min; Supply Voltage Min:10V; Supply Voltage Max:28V; Product Range:Fpd2000 Series; Accuracy:0.5%; Port Size:6.35Mm; Pressure Max:345Bar Rohs Compliant: Yes |Omega FPD2001
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    Newark FPD2001 Bulk 1
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    Omega Engineering FPD2002

    Al Gr Mtr W/Pls 0.01 - 2 Ce Rohs Compliant: Yes |Omega FPD2002
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    Newark FPD2002 Bulk 1
    • 1 $1869.66
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    Omega Engineering FPD2003

    Al Gr Mtr W/Pls 0.03- 7 Rohs Compliant: Yes |Omega FPD2003
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    Newark FPD2003 Bulk 1
    • 1 $2071.62
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    Find more FPD200 price and stock on Findchips.com

    FPD200 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FPD200 Filtronic General Purpose pHEMT Original PDF
    FPD2000AS Filtronic 2w Packaged Power pHEMT Original PDF
    FPD2000AS-EB Filtronic 2W PACKAGED POWER PHEMT Original PDF
    FPD2000V Filtronic 2w Power pHEMT Original PDF
    FPD200P70 Filtronic Hi-frequency Packaged pHEMT Original PDF

    FPD200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FPD200

    Abstract: MIL-HDBK-263 400x400
    Text: FPD200 GENERAL PURPOSE PHEMT • • DRAIN BOND PAD 1X FEATURES ♦ 19 dBm Linear Output Power at 12 GHz ♦ 12 dB Power Gain at 12 GHz ♦ 17 dB Maximum Stable Gain at 12 GHz ♦ 12 dB Maximum Stable Gain at 18 GHz ♦ 45% Power-Added Efficiency SOURCE


    Original     		PDF FPD200 FPD200is FPD200 MIL-HDBK-263 400x400

    FPD200P70

    Abstract: transistor marking code 1325 RO29 "IPC 1752" gold L130
    Text: FPD200P70 Data sheet v4.0 HIGH FREQUENCY PACKAGED PHEMT FEATURES: • • • • • • PACKAGE 20 dBm Output Power P1dB 17 dB Gain at 5.8 GHz 0.7 dB Noise Figure at 5.8 GHz 30 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 26 GHz RoHS 9 GENERAL DESCRIPTION:


    Original     		PDF FPD200P70 26GHz FPD200P70 J-STD-020C, transistor marking code 1325 RO29 "IPC 1752" gold L130

    b 857 W3

    Abstract: fpd200p70 transistor marking code 1325 18GHZ TL11 TL22 VG07 filtronic Solid State
    Text: FPD200P70 HIGH FREQUENCY PACKAGED PHEMT PACKAGE FEATURES: • • • • • • Data sheet v2.3 20 dBm Output Power P1dB 17 dB Gain at 5.8 GHz 0.7 dB Noise Figure at 5.8 GHz 30 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 26 GHz RoHS GENERAL DESCRIPTION:


    Original     		PDF FPD200P70 FPD200P70 26GHz 85GHZ 18GHZ b 857 W3 transistor marking code 1325 18GHZ TL11 TL22 VG07 filtronic Solid State

    fpd200p70

    Abstract: No abstract text available
    Text: PRELIMINARY • FPD200P70 HI-FREQUENCY PACKAGED PHEMT PERFORMANCE ♦ 20 dBm Output Power P1dB ♦ 21 dB Power Gain (G1dB) at 1.85 GHz ♦ 0.7 dB Noise Figure at 1.85 GHz ♦ 30 dBm Output IP3 ♦ 50% Power-Added Efficiency at 1.85 GHz ♦ Useable Gain to 26 GHz


    Original     		PDF FPD200P70 FPD200P70

    FPD200

    Abstract: FPD200 DIE
    Text: FPD200 GENERAL PURPOSE PHEMT DIE Datasheet v2.1 FEATURES: • • • • • LAYOUT: 19 dBm Output Power P1dB 12 dB Power Gain at 12 GHz 17 dB Maximum Stable Gain at 12 GHz 12 dB Maximum Stable Gain at 18 GHz 45% Power-Added Efficiency GENERAL DESCRIPTION:


    Original     		PDF FPD200 FPD200 22A114. MIL-STD-1686 MIL-HDBK-263. FPD200 DIE

    EV-SP-000044-001

    Abstract: FPD200 CB100 FPD20 FPD2000AS RO4003 cw 7687 A114 es IPC 9701 W2020
    Text: FPD2000AS FPD2000AS 2W Packaged Power pHEMT 2W PACKAGED POWER pHEMT NOT FOR NEW DESIGNS Package Style: AS Product Description Features „ „ „ „ „ Optimum Technology Matching Applied „ GaAs HBT „ GaAs MESFET DE InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT


    Original     		PDF FPD2000AS 33dBm 46dBm FPD2000AS 85GHz) EB2000AS-AA DS100125 EV-SP-000044-001 FPD200 CB100 FPD20 RO4003 cw 7687 A114 es IPC 9701 W2020

    FPD200P70

    Abstract: b 857 W3 18GHZ TL11 TL22 "IPC 1752" gold DSA002486 filtronic Solid State
    Text: FPD200P70 Data sheet v3.0 HIGH FREQUENCY PACKAGED PHEMT FEATURES: • • • • • • PACKAGE 20 dBm Output Power P1dB 17 dB Gain at 5.8 GHz 0.7 dB Noise Figure at 5.8 GHz 30 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 26 GHz RoHS 9 GENERAL DESCRIPTION:


    Original     		PDF FPD200P70 FPD200P70 26GHz 85GHZ 18GHZ J-STD-020C, b 857 W3 18GHZ TL11 TL22 "IPC 1752" gold DSA002486 filtronic Solid State

    Untitled

    Abstract: No abstract text available
    Text: FPD200P70 HIGH FREQUENCY PACKAGED PHEMT FEATURES: • • • • • • Data sheet v2.2 PACKAGE 20 dBm Output Power P1dB 17 dB Gain at 5.8 GHz 0.7 dB Noise Figure at 5.8 GHz 30 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 26 GHz RoHS 9 GENERAL DESCRIPTION:


    Original     		PDF FPD200P70 FPD200P70 26GHz 85GHZ 18GHZ

    FPD200P70

    Abstract: TL11 TL22 l420 FPD200P70SR
    Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.


    Original     		PDF FPD200P70 FPD200P70 25mmx200mm 20dBm 26GHz 15GHz FPD200P70-AJ TL11 TL22 l420 FPD200P70SR

    FPD200

    Abstract: MIL-HDBK-263
    Text: FPD200 Datasheet v3.0 GENERAL PURPOSE PHEMT DIE LAYOUT: FEATURES: • • • • • 19 dBm Output Power P1dB 13 dB Power Gain at 12 GHz 17 dB Maximum Stable Gain at 12 GHz 12 dB Maximum Stable Gain at 18 GHz 45% Power-Added Efficiency GENERAL DESCRIPTION:


    Original     		PDF FPD200 FPD200 MIL-HDBK-263

    fpd2000as

    Abstract: FPD200 CB100 FPD20 RO4003 InP HBT transistor low noise
    Text: FPD2000AS FPD2000AS 2W Packaged Power pHEMT 2W PACKAGED POWER pHEMT Package Style: AS Product Description Features The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power applications in L-Band. The surface-mount package has been optimized


    Original     		PDF FPD2000AS FPD2000AS 33dBm 46dBm 85GHz) EB2000AS-AA 14GHz) EB2000AS-AD EB2000AS-AG FPD200 CB100 FPD20 RO4003 InP HBT transistor low noise

    FPD200

    Abstract: No abstract text available
    Text: FPD200 TOM3 and TOM2 Models 24/01/2005 Modelling Report FPD200 TOM3 and TOM2 Models Version 1.0 - Device Design and Modelling Group Filtronic Compound Semiconductor Ltd. 1 FPD200 TOM3 and TOM2 Models 24/01/2005 Introduction This report describes the models for the FPD200 discrete p-HEMT device. The


    Original     		PDF FPD200 28GHz 25GHz

    A114

    Abstract: A115 FPD2000V JESD22 Au Sn eutectic
    Text: PRELIMINARY • • PERFORMANCE 1.8 GHz ♦ 33 dBm Linear Output Power ♦ 14.5 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 44 dBm Output IP3 ♦ 20 dB Maximum Stable Gain ♦ 45% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias FPD2000V


    Original     		PDF FPD2000V FPD2000V A114 A115 JESD22 Au Sn eutectic

    FPD200 DIE

    Abstract: No abstract text available
    Text: FPD200 FPD200General Purpose pHEMT Die GENERAL PURPOSE pHEMT DIE Package Style: Bare Die Product Description Features The FPD200 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx200μm Schottky barrier gate,


    Original     		PDF FPD200 FPD200General FPD200 mx200Î 19dBm 12GHz 18GHz FPD200-000 DS090519 FPD200 DIE

    transistor A114

    Abstract: transistor a114 diagram A114 transistor transistor a115
    Text: PRELIMINARY • • PERFORMANCE 1.8 GHz ♦ 33 dBm Linear Output Power ♦ 14.5 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 44 dBm Output IP3 ♦ 20 dB Maximum Stable Gain ♦ 45% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias FPD2000V


    Original     		PDF FPD2000V FPD2000V transistor A114 transistor a114 diagram A114 transistor transistor a115

    FPD200P70

    Abstract: No abstract text available
    Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.


    Original     		PDF FPD200P70 FPD200P70 25mmx200mm 26GHz 20dBm 15GHz EB200P70-AJ

    fpd200p70

    Abstract: w65 transistor FPD200P70SR TL11 TL22 "IPC 1752" gold 8GH transistor L30 type RF microwave power transistor FPD200P70SB 3400 transistor
    Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.


    Original     		PDF FPD200P70 FPD200P70 25mmx200mm 26GHz 20dBm 15GHz EB200P70-AJ w65 transistor FPD200P70SR TL11 TL22 "IPC 1752" gold 8GH transistor L30 type RF microwave power transistor FPD200P70SB 3400 transistor

    transistor marking code 1325

    Abstract: vp 3082 EV-SP-000044-001 MARKING W1 AD PHEMT marking code a FPD2000AS ipc 9701 filtronic Solid State
    Text: FPD2000AS Datasheet v2.4 2W PACKAGED POWER PHEMT FEATURES: • • • • • • • PACKAGE: 33 dBm Output Power P1dB @1.8GHz 14 dB Power Gain (G1dB) @1.8GHz 46 dBm Output IP3 10V Operation 50% Power-Added Efficiency Evaluation Boards Available Usable Gain to 4GHz


    Original     		PDF FPD2000AS FPD2000AS J-STD-020C, transistor marking code 1325 vp 3082 EV-SP-000044-001 MARKING W1 AD PHEMT marking code a ipc 9701 filtronic Solid State

    FPD200

    Abstract: FPD200 DIE MIL-HDBK-263 bjt 137 FPD200-000
    Text: FPD200 FPD200General Purpose pHEMT Die GENERAL PURPOSE pHEMT DIE Package Style: Bare Die Product Description Features The FPD200 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx200μm Schottky barrier gate,


    Original     		PDF FPD200 FPD200General FPD200 25mx200m 19dBm 12GHz 18GHz FPD200-000 DS090519 FPD200 DIE MIL-HDBK-263 bjt 137 FPD200-000

    Filtronic

    Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500
    Text: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15


    Original     		PDF FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B Filtronic EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500

    transistor marking code 1325

    Abstract: FPD2000AS filtronic Solid State
    Text: FPD2000AS Datasheet v3.0 2W PACKAGED POWER PHEMT FEATURES: • • • • • • • PACKAGE: 33 dBm Output Power P1dB @1.8GHz 14 dB Power Gain (G1dB) @1.8GHz 46 dBm Output IP3 10V Operation 50% Power-Added Efficiency Evaluation Boards Available Usable Gain to 4GHz


    Original     		PDF FPD2000AS FPD2000AS J-STD-020C, transistor marking code 1325 filtronic Solid State

    transistor P2F

    Abstract: p2f 250 PHEMT marking code a p2F 45 FPD2000AS MIL-HDBK-263 40 P1dB 2W transistor marking code 1325
    Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website ♦ Usable Gain to 4GHz


    Original     		PDF FPD2000AS FPD2000AS 350mA transistor P2F p2f 250 PHEMT marking code a p2F 45 MIL-HDBK-263 40 P1dB 2W transistor marking code 1325

    VCO-102

    Abstract: NBB-502 spf-5189 RF5643wda cxe-2089
    Text: RFMD Product Selection Guide 2011 - 2012 Multiple Markets. Multiple Choices. One RFMD. ® Multiple Markets. Multiple Choices. One RFMD . ® RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available ♦ Usable Gain to 4GHz • DESCRIPTION AND APPLICATIONS


    Original     		PDF FPD2000AS FPD2000AS 350mA