G MARKING SBD Search Results

SmD TRANSISTOR a77

Abstract: smd marking code SSs
Contextual Info: BSS138 In fin e o n technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level ' ^GS th = 0.8.2.0V Pin 1 Pin 3 Pin 2 S G Type Vbs b ^D S (o n ) Package Marking BSS 138 50 V 0.22 A 3.5 Q SOT-23 SSs Type BSS 138 BSS 138

Contextual Info: SA0YO Smal 1-Si gnal H i g h - V o l t a g e S c h o t t k y B a r r i r Di o d e s 1 Sanyo Schottky barrier diodes (S B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.

Contextual Info: Panasonic S chottky B arrier D iodes SBD MA2Z748 Silicon epitaxial planer type U nit : mm For super high-speed switching circuit For small current rectification Cathode .^ Anode °- H- ° • Features • Low V[. type of MA720 -H Z Z • Low Vp (forward rise voltage) with high rectification efficiency

MA733

Abstract: diode marking Gc marking GC diode 103 capacitor
Contextual Info: MA111 Schottky Barrier Diodes SBD MA733 Silicon epitaxial planer type Unit : mm For UHF mixer INDICATES CATHODE 2 Large conversion gain GC and optimum for UHF mixer ● S-Mini package, enabling down-sizing of the equipment and auto- ue pl d in an c se ed lud

FRQS20A045

Abstract: UL94V-01
Contextual Info: SBD Anode common 20A 45V Tjw150V Fully Molded similar to TO-22QAB FRQS20A045 tttiS Nihon Inter Electronics Corporation Specification '> 3 '7 h y r yj Construction Schottky Barrier Diode Application High Frequency Rectification • k MAXIMUM RATINGS Ta = 25°C Unless otherwise specified

1ss37

Contextual Info: smm Small-Signal High-Voltage Schottky Barri r Di odes 3 Sanyo Schottky barrier diodes (S B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.

SBD1630CT

Abstract: SBD1645CT S1630 S1630T-S1645T
Contextual Info: ¿Z&MOSPEC SBD1630CT thru SBD1645CT SWITCHMODE POWER RECTIFIERS SCHOTTKY BARRIER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features:

Contextual Info: # y —h'=¡^y SBD 8 A 6 5 V Tjw1 5 0 V Fully Molded similar to TO-22QAB Cathode common F C H S 0 8 A 0 6 5 t t s * Nihon Inter Electronics Corporation Specification. i/a y V mm Construction f flìÉ Application 3r— K y Schottky B arrier Diode itiT O S iifE ffl

SB07

Abstract: sb10-05pcp
Contextual Info: SAßYO Small-Signal High-Voltage Schottky Barri er Di odes 1 Sanyo Schottky barrier diodes CS B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.

SBD52

Contextual Info: SBD52C05L01 DESCRIPTION Brightking's the SBD52 series of Transient Voltage Suppressors TVS are designed to replace multilayer varistors(MLVs) in portable applications such as cell phones,notebook computers,and PDAs.They offer superior electrical characteristics such as lower clamping voltage and no device degradation

SBD52

Contextual Info: SBD52C05L01 DESCRIPTION Brightking's the SBD52 series of Transient Voltage Suppressors TVS are designed to replace multilayer varistors(MLVs) in portable applications such as cell phones,notebook computers,and PDAs.They offer superior electrical characteristics such as lower clamping voltage and no device degradation

Contextual Info: ¿SSmS!enmSMdcrZmil\ „ mh Sbdw M i or In part. for m m faotura ar M h a im f i v ttaa t a d im l Oanorattoa r t M It prior aanoart, A ttat m light la pentad to dM aaa ar to uaa a % InlormeBoa In ttfc ap— w t_ to r 6,00+0.25 n n

SBD835L

Contextual Info: SBD835L ADVANCE INFORMATION 8A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • · · · · · Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Very Low Forward Voltage Drop

SBD835L

Contextual Info: SBD835L ADVANCE INFORMATION 8A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • · · · · · Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Very Low Forward Voltage Drop

SBD835L

Abstract: SBG11100
Contextual Info: SBD835L ADVANCE INFORMATION 8A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • · · · · · Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Very Low Forward Voltage Drop

SB01-05QCA

Contextual Info: SA0O S m a l l - S i g n a l H i g h - V o l t a g e S c h o t t k y Barr ier Di o d e s 1 Sanyo Schottky barrier diodes (S B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.

SBD1035CT

Abstract: SBG11100 JEDEC to 243
Contextual Info: SBD1035CT ADVANCE INFORMATION 10A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • · · · · · Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Very Low Forward Voltage Drop

Contextual Info: O rdering number : EN 5052 No.5052 FX802 ¡I_ TR : P N P Epitaxial P lan a r Silicon T ransistor SBD : Schottky B arrier Diode Twin Type •Cathode Common SA\YO, DC-DC Converter F eatures - Complex type of a low saturation voltage, high speed switching and large c u rre n t P N P transistor and

Schottky diode high reverse voltage

Abstract: diodes ir IR 50 MARKING 103 transistor marking N1
Contextual Info: Schottky Barrier Diodes SBD MA4L784 Silicon epitaxial planar type Unit: mm For high speed switching For small current rectification 0.020±0.010 2 0.80±0.05 3 • Features M Di ain sc te on na tin nc ue e/ d 0.60±0.05 1.00±0.05 0.20±0.03 4 3 0.30±0.03

sb30

Abstract: si120
Contextual Info: Smal ¡“Signal High-Voltage Schottky Barri er Di odes 1 Sanyo Schottky barrier diodes (S B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.

Contextual Info: Schottky Barrier Diodes SBD MA4L728 Silicon epitaxial planar type Unit: mm For high speed switching For wave detection 0.020±0.010 2 0.80±0.05 3 • Features M Di ain sc te on na tin nc ue e/ d 0.60±0.05 1.00±0.05 0.20±0.03 4 ■ Absolute Maximum Ratings Ta = 25°C

Contextual Info: Ordering number : EN 4552 SANYO No.4552 ¡I_ FP106 TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode DC-DC Converter Applications F eatu res • Complex type with a PNP transistor and a Schottky barier diode in one package, facilitating highdensity mounting.

1640CT

Abstract: 1645CT SBD1630CT SBD1645CT 1635CT to252aadpak S1630T-S1645T
Contextual Info: MOSPEC SBD1630CT thru SBD1645CT SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE SCHOTTKY BARRIER RECTIFIERS The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have

Contextual Info: MOSPEC SBD2030CT thru SBD2045CT SWITCH MODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE SCHOTTKY BARRIER RECTIFIERS The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have