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    G11 TRANSISTOR Search Results

    G11 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    G11 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G11 transistor

    Abstract: 6T SRAM LSI ASIC lsi gigablaze transceiver transistor G11 ADC Verilog Implementation
    Text: G11 A S I C C e l l - B a s e d P r o d u c t s Eleventh Generation ASIC Technology Overview LSI Logic’s G11 ASIC product family offers two distinct products—one optimized for high performance G11-p , the other for low power (G11-v)—enabling designers to meet divergent cost/performance requirements, whether it is for networking, telecoms/wireless, computer or consumer applications. Based on a single


    Original     		PDF G11-p) G11-v 18-micron B20017 G11 transistor 6T SRAM LSI ASIC lsi gigablaze transceiver transistor G11 ADC Verilog Implementation

    600V igbt dc to dc buck converter

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
    Text: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]


    Original     		PDF B192-H6780-G11-X-7600 SP000008186 VDSL6100i-E 600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital Transistors built-in resistors EMG11 dual digital transistors (NPN+NPN) SOT-553 FEATURES Two DTC123JCA chips in a package 1 Marking: G11 Equivalent circuit: Absolute maximum ratings (Ta=25℃) Symbol


    Original     		PDF EMG11 OT-553 DTC123JCA 100MHz

    transistor G11

    Abstract: to-126 HIGH SPEED SWITCHING transistor g11 transistor NPN Transistor 10A 400V NPN Transistor 1A 400V to - 92 to-126 npn switching transistor 400v d 772 transistor
    Text: TS13003 High Voltage NPN Transistor TO-92 TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 400V BVCBO 700V IC 1.5A VCE SAT Features 1V @ IC =0.5A, IB =0.1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type


    Original     		PDF TS13003 O-126 TS13003CT TS13003CK transistor G11 to-126 HIGH SPEED SWITCHING transistor g11 transistor NPN Transistor 10A 400V NPN Transistor 1A 400V to - 92 to-126 npn switching transistor 400v d 772 transistor

    Untitled

    Abstract: No abstract text available
    Text: EMG11 / UMG11N / FMG11A Transistors Emitter common dual digital transistors EMG11 / UMG11N / FMG11A zExternal dimensions (Units : mm) zFeatures 1) Two DTA123Js chips in a EMT or UMT or SMT package. 0.22 (4) (3) (2) (5) EMG11 / UMG11N (3) R1 (2) 0.5 Each lead has same dimensions


    Original     		PDF EMG11 UMG11N FMG11A DTA123Js EMG11 UMG11N

    EMG11

    Abstract: FMG11A T148 UMG11N marking G11
    Text: EMG11 / UMG11N / FMG11A Transistors Emitter common dual digital transistors EMG11 / UMG11N / FMG11A !External dimensions (Units : mm) !Features 1) Two DTA123Js chips in a EMT or UMT or SMT package. 0.22 (4) (3) (2) (5) EMG11 / UMG11N (3) R1 (2) 0.5 Each lead has same dimensions


    Original     		PDF EMG11 UMG11N FMG11A DTA123Js UMG11N FMG11A T148 marking G11

    CA3102

    Abstract: CA3102E CA3102M CA3102MZ FN611
    Text: CA3102 Data Sheet October 12, 2005 Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz The CA3102 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six transistors which


    Original     		PDF CA3102 500MHz CA3102 500MHz. FN611 200MHz CA3102E CA3102M CA3102MZ

    CA3102

    Abstract: CA3102E CA3102M MS-012-AB diode b22 L 321 t
    Text: CA3102 TM Data Sheet November 1999 Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz The CA3102 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six transistors which


    Original     		PDF CA3102 500MHz CA3102 500MHz. FN611 200MHz CA3102E CA3102M MS-012-AB diode b22 L 321 t

    CA3102

    Abstract: CA3102E CA3102M MS-012-AB
    Text: CA3102 Data Sheet November 1999 Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz The CA3102 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six transistors which


    Original     		PDF CA3102 500MHz CA3102 500MHz. 200MHz CA3102E CA3102M MS-012-AB

    Untitled

    Abstract: No abstract text available
    Text: EMG11 / UMG11N / FMG11A Transistors Emitter common dual digital transistors EMG11 / UMG11N / FMG11A !External dimensions (Units : mm) !Features 1) Two DTA123Js chips in a EMT or UMT or SMT package. 0.22 (4) (3) (2) (5) EMG11 / UMG11N (3) R1 (2) 0.5 Each lead has same dimensions


    Original     		PDF EMG11 UMG11N FMG11A DTA123Js EMG11 UMG11N

    EMG11

    Abstract: FMG11A T148 UMG11N
    Text: EMG11 / UMG11N / FMG11A Transistors Emitter common dual digital transistors EMG11 / UMG11N / FMG11A zExternal dimensions (Unit : mm) zFeatures 1) Two DTA123Js chips in a EMT or UMT or SMT package. 0.22 (4) (3) (2) (5) R1 DTr1 FMG11A Package EMT5 UMT5 SMT5


    Original     		PDF EMG11 UMG11N FMG11A DTA123Js UMG11N EMG11 FMG11A T148

    z144

    Abstract: zener Diode B22 1021-P1 cascode transistor array CA3127 CA3127E CA3127M CA3127M96 HP342A ,zener Diode B22
    Text: CA3127 S E M I C O N D U C T O R High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the


    Original     		PDF CA3127 CA3127 500MHz. 200MHz z144 zener Diode B22 1021-P1 cascode transistor array CA3127E CA3127M CA3127M96 HP342A ,zener Diode B22

    HP-343A

    Abstract: HP342A y12 t 646 HP343A CA3127E 1021-P1 cascode transistor array 150MIL CA3127 CA3127F
    Text: CA3127 S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127* consists of five general purpose silicon n-p-n transistors on a common monolithic substrate. Each of the


    Original     		PDF CA3127 CA3127* CA3127 500MHz. 100MHz 1021-P1 100MHz HP343A HP-343A HP342A y12 t 646 HP343A CA3127E 1021-P1 cascode transistor array 150MIL CA3127F

    z144

    Abstract: CA3127 1021-P1 cascode transistor array HP342A CA3127E CA3127M CA3127M96 zener Diode B22
    Text: CA3127 High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the


    Original     		PDF CA3127 CA3127 500MHz. z144 1021-P1 cascode transistor array HP342A CA3127E CA3127M CA3127M96 zener Diode B22

    ccb transistor

    Abstract: TRANSISTOR 100MHz
    Text: CA3127 Data Sheet August 2003 FN662.4 High Frequency NPN Transistor Array Features The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a


    Original     		PDF CA3127 FN662 CA3127 500MHz. 30dBtersil ccb transistor TRANSISTOR 100MHz

    m 60 n 03 g10

    Abstract: No abstract text available
    Text: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60


    OCR Scan     		PDF 7057fl 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 m 60 n 03 g10

    BC337B

    Abstract: BFS98 ZTX338 ZTX452 MPSA06 ZTX451 ZTX454 ZTX551 ZTX552 ZTX553
    Text: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1 0 0 0 mW at 2 5 ° C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Sw itching, etc.


    OCR Scan     		PDF 1000mW ZTX4555 ZTX555 ZTX454 ZTX554 ZTX453S ZTX553 ZTX452 ZTX552 MPSA06 BC337B BFS98 ZTX338 ZTX451 ZTX551 ZTX552 ZTX553

    BC337b

    Abstract: bc327b 2N2102 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88
    Text: NPN SW ITCHING TABLE 3 - NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector


    OCR Scan     		PDF 2N3262 T0-39 T0-18 ZTX552 MPSA56 ZTX751 ZTX551 MPSA55 ZTX750 ZTX550 BC337b bc327b 2N2102 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88

    bc327b

    Abstract: bc140 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military


    OCR Scan     		PDF ZTX552 MPSA56 ZTX751 ZTX551 MPSA55 ZTX750 ZTX550 BC327A BC327B BC327C bc140 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88

    2N1893

    Abstract: 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91 ZT92
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military


    OCR Scan     		PDF ZTX552 MPSA56 ZTX751 ZTX551 MPSA55 ZTX750 ZTX550 BC327A BC327B BC327C 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91 ZT92

    BCY56

    Abstract: 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military


    OCR Scan     		PDF ZTX552 MPSA56 ZTX751 ZTX551 MPSA55 ZTX750 ZTX550 BC327A BC327B BC327C BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91

    BSY55

    Abstract: m 60 n 03 g10 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military


    OCR Scan     		PDF ZTX552 MPSA56 ZTX751 ZTX551 MPSA55 ZTX750 ZTX550 BC327A BC327B BC327C BSY55 m 60 n 03 g10 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88

    ztx614

    Abstract: 2n6718 2N6714 2N6715 2N6716 2N6717 2N6724 2N6725 2N6726 2N6727
    Text: TABLE 10: 2N6700 SERIES MEDIUM POWER TRANSISTORS Max. Cont. Max. PNP NPN 2N6714 2N6715 2N6724 2N6725 2N6716 2N6717 2N 6731 2N6718 V cbo 2N6726 2N6727 — — 2N6728 2N6729 2N6732 2N6730 •c V CEO Max. V CEIsat at •c m 'c mA V V A A V 40 50 50 60 60 80


    OCR Scan     		PDF 2N6700 2N6714 2N6726 2N6715 2N6727 2N6724 2N6725 2N6716 2N6728 2N6717 ztx614 2n6718 2N6724 2N6725

    BF494

    Abstract: B22 base BF495 LY2L C2216 transistors bf495 bf494 emitter common y-parameter F1-07
    Text: D r t+ î 3 t+ o r NPN SILICON RF SMALL SIGNAL TRANSISTORS ajiÄi 11 v*« » HÉ = 4 S5SS s s £ CASE TO-92E THE BP494, BF495 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR RF SMALL SIGNAL APPLICATIONS UP TO lOOMHz. CBE ABSOLUTE MAXIMUM RATINGS BF494 BF495


    OCR Scan     		PDF BP494, BF495 O-92E BF494 300mW 45mlT ly12l B22 base LY2L C2216 transistors bf495 bf494 emitter common y-parameter F1-07