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    GAAS FET AMPLIFIER F 10MHZ TO 2 GHZ Search Results

    GAAS FET AMPLIFIER F 10MHZ TO 2 GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TA75W01FU
    		Toshiba Electronic Devices & Storage Corporation Operational Amplifier, Bipolar (358) type Dual Op-Amp, 3V to 12V, SOT-505 Visit Toshiba Electronic Devices & Storage Corporation
    TC75S55F
    		Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.8V to 7.0V, IDD=10μA, SOT-25/SOT-353 Visit Toshiba Electronic Devices & Storage Corporation
    TC75S54F
    		Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.8V to 7.0V, IDD=100μA, SOT-25/SOT-353 Visit Toshiba Electronic Devices & Storage Corporation
    TC75S51F
    		Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 7.0V, IDD=60μA, SOT-25/SOT-353 Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F
    		Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation

    GAAS FET AMPLIFIER F 10MHZ TO 2 GHZ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MGFS45V2735

    Abstract: 051 166
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET O U TLIN E FEATURES 2M IN DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFS45V2735 MGFS45V2735 -45dBc 051 166 PDF

    051 166

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFS45V2735 MGFS45V2735 -45dBc 051 166 PDF

    MGFS45V2735

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFS45V2735 MGFS45V2735 -45dBc 25deg PDF

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V3642 3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC41V3642 is an internally impedence matched GaAs power FET especially designed for use in 3.6 - 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFC41V3642 MGFC41V3642 50ohm Item-51] 30dBm Item-51 10MHz June/2004 PDF

    Fujitsu GaAs FET application note

    Abstract: atc100a FLL810 Hp 2564 FLL810IQ-3C IMT-2000 S03A2750N1 RFP 1026 resistor fujitsu x band amplifiers "15 GHz" power amplifier 41dBm
    Contextual Info: APPLICATION NOTE NUMBER 011 An 80-W, 2.5-2.7 GHz GaAs FET Linear Amplifier for MMDS Application An 80-W, 2.5-2.7 GHz, class AB linear balanced amplifier for MMDS and wireless-data/Internet applications using a GaAs FET quasi E-mode push-pull Fujitsu device was


    Original     		fcs64 magS22 angS22 Fujitsu GaAs FET application note atc100a FLL810 Hp 2564 FLL810IQ-3C IMT-2000 S03A2750N1 RFP 1026 resistor fujitsu x band amplifiers "15 GHz" power amplifier 41dBm PDF

    MGFC42V5964A

    Abstract: mgfc42v5964
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964A 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFC42V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFC42V5964A MGFC42V5964A Item-51] June/2004 mgfc42v5964 PDF

    MGFC40V4450

    Abstract: 50GHz
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V4450 4.4 ~ 5.0GHz BAND 10 W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC40V4450 is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC40V4450 MGFC40V4450 29dBm 10MHz June/2004 50GHz PDF

    MGFC41V6472

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V6472 6.4 ~ 7.2GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC41V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC41V6472 MGFC41V6472 30dBm 10MHz Oct-03 PDF

    MGFC39V5964A

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V5964A 5.9 ~ 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC39V5964A MGFC39V5964A 28dBm 10MHz June/2004 PDF

    MGFC36V6472A

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V6472A 6.4 ~ 7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2 GHz band amplifiers.The hermetically sealed metalceramic package guarantees high reliability.


    Original     		MGFC36V6472A MGFC36V6472A 25dBm 10MHz June/2004 PDF

    MGFC36V4450A

    Abstract: MGFC36V4450
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V4450A 4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC36V4450A MGFC36V4450A 25dBm 10MHz June/2004 MGFC36V4450 PDF

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V4450 4.4 ~ 5.0GHz BAND 16 W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V4450 is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC42V4450 MGFC42V4450 31dBm 10MHz June/2004 PDF

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3742 3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC42V3742 MGFC42V3742 31dBm 10MHz June/2004 PDF

    MGFC39V7177A

    Abstract: 71F71
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7177A 7.1 ~ 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC39V7177A MGFC39V7177A 28dBm 10MHz June/2004 71F71 PDF

    gf-18

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V3742 3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC40V3742 MGFC40V3742 29dBm 10MHz June/2004 gf-18 PDF

    MGFC36V7177A

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V7177A 7.1 ~ 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC36V7177A MGFC36V7177A 25dBm 10MHz June/2004 PDF

    MGFC36V3742A

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V3742A 3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC36V3742A MGFC36V3742A 25dBm 10MHz June/2004 PDF

    delta 6 radio

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V7785A 7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC42V7785A MGFC42V7785A 32dBm 10MHz June/2004 delta 6 radio PDF

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5964 5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC40V5964 MGFC40V3742 29dBm 10MHz June/2004 PDF

    MGFC36V7785A

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V7785A 7.7 ~ 8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metalceramic package guarantees high reliability.


    Original     		MGFC36V7785A MGFC36V7785A 25dBm 10MHz June/2004 PDF

    MGFC39V4450A

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V4450A 4.4 ~ 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metalceramic package guarantees high reliability.


    Original     		MGFC39V4450A MGFC39V4450A 28dBm 10MHz June/2004 PDF

    MGFC39V3742A

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3742A 3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC39V3742A MGFC39V3742A 28dBm 10MHz June/2004 PDF

    mgfc39v7785

    Abstract: MGFC39V7785A
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7785A 7.7 ~ 8.5GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metalceramic package guarantees high reliability.


    Original     		MGFC39V7785A MGFC39V7785A 28dBm 10MHz June/2004 mgfc39v7785 PDF

    GAAS FET AMPLIFIER f 10Mhz to 2 GHz

    Abstract: 6 ghz amplifier 10w MGFC40V6472 MGFC40V6472A GF-18 Gaas Power Amplifier 10W
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V6472 6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC40V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFC40V6472 MGFC40V6472A Item-51] 10MHz June/2004 GAAS FET AMPLIFIER f 10Mhz to 2 GHz 6 ghz amplifier 10w MGFC40V6472 GF-18 Gaas Power Amplifier 10W PDF