MGFC40V3742 Search Results

MGFC40V3742 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MGFC40V3742		Mitsubishi	3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET	Original	PDF	209.13KB	2
MGFC40V3742		Mitsubishi		Original	PDF	102.14KB	2
MGFC40V3742A		Mitsubishi	3.7 - 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET	Scan	PDF	96.82KB	2

MGFC40V3742 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MGFC40V3742 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V3742 3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2	Original	MGFC40V3742 MGFC40V3742 29dBm 10MHz June/2004	PDF
MGFC40V3742 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V3742 3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2	Original	MGFC40V3742 MGFC40V3742 29dBm 10MHz	PDF
Contextual Info: < C band internally matched power GaAs FET > MGFC40V3742 3.7 – 4.2 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFC40V3742 MGFC40V3742 -45dBc 29dBm	PDF
gf-18 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V3742 3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFC40V3742 MGFC40V3742 29dBm 10MHz June/2004 gf-18	PDF
MGFC40V3742 Abstract: MGFC40V5964 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5964 5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4	Original	MGFC40V5964 MGFC40V3742 29dBm 10MHz June/2004 MGFC40V5964	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5964 5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFC40V5964 MGFC40V3742 29dBm 10MHz June/2004	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V3742 3 .7 ~ 4 .2 G H z BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION O UTLINE D R AW IN G The M G F C 4 0 V 3 7 4 2 is an internally impedance-matched GaAs power F E T especially designed for use in 3.7 ~ 4.2 20.4 + 0.2 0.803 ± 0.008	OCR Scan	MGFC40V3742 27C102P, RV-15	PDF
MGFC40V3742 Abstract: MGFC40V5964 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5964 5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4	Original	MGFC40V5964 MGFC40V3742 29dBm 10MHz MGFC40V5964	PDF
Contextual Info: < C band internally matched power GaAs FET > MGFC40V3742 3.7 – 4.2 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFC40V3742 MGFC40V3742 50ohm	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V3742A 3 .7 — 4.2 G H z BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FC 40V 3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic	OCR Scan	MGFC40V3742A	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> ! M G FC40V3742 3 .7 — 4 .2 G H z BAND 10W IN TE R N A L L Y M A TCH ED GaAs F E T ¡ DESCRIPTION The M G FC40V3742 is an internally impedance-matched GaAs power FET especially designed fo r use in 3.7 ~ 4.2 GHz band amplifiers. The herm etically sealed metal-ceramic	OCR Scan	FC40V3742 FC40V3742	PDF
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776	PDF
MGF4919G Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A Contextual Info: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10	OCR Scan	MGF1302 MGF1303B MGF1323 MGF14 MGF1412B MGF1403B MGF1423B MGF1425B MGF1902B MGF1903B MGF4919G MGF4919 MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A	PDF
mgfc30 Abstract: MGFC39V5964A Contextual Info: C BAND INTERNALLY MATCHED GaAs FET M GFCxxVxxxxx Series Typical Characteristics Type Freq. GHz PldB (dBm) GIp mi MGFC36V3742 3 .7 -4 .2 IMG FC36V3742A M GFC36V4460 MGFC36V4460A MGFC38VS258 MGFC36V6964 M G FC36V6964A MGFC36V6471 3 .7 -4 .2 ii 4 .4 -5 .0 10	OCR Scan	MGFC36V3742 FC36V3742A GFC36V4460 MGFC36V4460A MGFC38VS258 MGFC36V6964 mgfc30 MGFC39V5964A	PDF