ST 9340
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PSSI3120CA PECL termination Product specification 2001 Jul 19 Philips Semiconductors Product specification PECL termination PSSI3120CA PINNING - SOT23 FEATURES • Single channel PECL termination in a three pin SOT23
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M3D088
PSSI3120CA
PSSI3120CA
MGC421
di20CA
13-Feb-03)
ST 9340
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PIN diode SPICE model
Abstract: Microwave PIN diode spice Microwave PIN diode pin diode ge-2 transistor TM 937 UMX5601 V920 pin model spice MSC Microwave
Text: Spice Model Data for UMX5601 PIN Diode TM SPICE MODEL DATA The overall SPICE PIN diode model developed for the UMX5601 exhibits the equivalent circuit shown below where: - CPACK is the package capacitance L CONTACT is the contact inductance CI is the punch through I-region capacitance
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UMX5601
beta/11}
tau/13}
beta/15}
tau/17}
beta/19}
PIN diode SPICE model
Microwave PIN diode spice
Microwave PIN diode
pin diode
ge-2 transistor
TM 937
V920
pin model spice
MSC Microwave
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spice
Abstract: diode 10e IR80CPQ20
Text: Electro-Thermal SPICE Schottky Diode Model suitable both at room temperature and at high temperature December 20th, 1999 Alberto Guerra and Francesco Vallone Department of Input/Output Rectifier International Rectifier, 1521 Grand, El Segundo 90245, California, U.S.A.
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336086E-03/5
80CPQ20
80CPQ20T
10E-2
38E-2
36E-1
27E-2
39E-2
54E-1
12e-5
spice
diode 10e
IR80CPQ20
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVN4210A ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS on = 1.5Ω * Spice model available D G S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Drain-So urce Voltage V DS
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ZVN4210A
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e420 dual jfet
Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
Text: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.
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npn transistor w19
Abstract: w19 transistor
Text: U h # HARRIS HTA2000 SEMICONDUCTOR • RCA • GE • INTERSIL VHF Tile Array June 1990 Advance Information Features Overview • Supported on Harris Bipolar Analog FASTRACK Design System The Harris HTA2000 Tile Array provides the analog system designer with a fast turn, low cost tile array methodology for
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HTA2000
HTA2000
npn transistor w19
w19 transistor
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BMA16X16
Abstract: No abstract text available
Text: SI GE C P L E S S E Y MARCH 1997 S E M I C O N D U C T O R S CLA80000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION ARRAY SIZES The CLA80k gate array series from GEC Plessey Semiconductors offers advantages in speed and density over previous array series. Improvements in design combined with
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CLA80000
CLA80k
PGA100-ACA-3434
PGA120-ACA-3434
PGA144-ACA-4040
PGA180-ACA-4040
PGA181
-ACA-4040
PGA257-ACA-5151
BMA16X16
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Untitled
Abstract: No abstract text available
Text: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX617 ISSSU E 1 - NOVEMBER 1998 FEATU RES * 2W POWER D IS S IP A T IO N * * * * 12A Peak Pu lse Current Exce lle n t H FE C h a ra cte ristics up to 12 A m p s Extre m e ly Lo w S a tu ra tio n V o lta ge E.g. 8 m v T y p .
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FCX617
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LT8900
Abstract: itt 2222a LT89000 2203a ses cree 3535 PS-303 AD clt850 LT8600 2168A LT8500
Text: Æ | M IT - L I f 1 w II CLA80000 SERIES I Km*Ink HIGH DENSITY CMOS GATE ARRAYS SEMICONDUCTOR DS3820-2.1 July 1997 INTRODUCTION ARRAY SIZES T he C L A 8 0 k gate array se rie s from M itel S e m ico n d u cto r offers advan ta ge s in spe ed and d e n sity over previous array
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CLA80000
DS3820-2
rra635
MLA85
MLA87
MLT88
MLT89
GA84-ACA-2828
PGA100-ACA-3434
PGA120-ACA-3434
LT8900
itt 2222a
LT89000
2203a ses
cree 3535
PS-303 AD
clt850
LT8600
2168A
LT8500
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LTA 702 N
Abstract: LTA 702
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 FEATU RES * 60 Volt V CE0 P A R T M A R K IN G D E T A IL - 702 ABSOLUTE MAXIMUM RATINGS, PARAM ETER SYM BO L D ra in -S o u rce V o lta ge ^DS C o n tin u o u s D rain C u rren t at T <Jmb=25°C
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300jis.
LTA 702 N
LTA 702
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Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTORS FZT651 ISSU E 2 - FEBRUARY 1995_ FEATURES * 60 Volt V CE0 * 3 A m p c o n tin u o u s current * L o w Saturation v olta ge C O M P L E M E N T A R Y T Y P E - FZT751 P A R T M A R K IN G D E T A IL - FZT651
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OT223
FZT651
FZT751
Bre300
100mA,
500mA,
300ns.
mbg25
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Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT689B I S S U E 3 - O C T O B E R 1995 _ FEATU RES * G ain o f 400 at lc=2 A m p s a n d lo w saturation v o lta ge * Extrem ely lo w e q u iva le nt o n -re sistan ce; R CElMti 9 2 m Q at 3 A
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OT223
FZT689B
FZT789B
FZT689B
300ji
lc/lBa10
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Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT653 I S S U E 3 - F E B R U A R Y 1995 FEATURES * L o w saturation v o lta ge C O M P LEM EN T A R Y TYPE - F2 T 7 53 P A R T M A R K IN G D E T A I L - FZ T 653 B ABSOLUTE MAXIMUM RATINGS. PARAM ETER
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OT223
FZT653
J7Q57fl
500mA,
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E3030
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR DARLINGTON TRANSISTOR FZTA14 ISSUE 3 -J A N U A R Y 1996_ P A R T M A R K IN G DETAIL:- D E V IC E T Y P E IN F U L L C O M P LEM EN T A R Y TYPE FZTA64 ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L C olle ctor-E m itter V o lta ge
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OT223
FZTA64
FZTA14
300ns.
E3030
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Untitled
Abstract: No abstract text available
Text: \ f POWER O P E R A TIO N A L A M P LIF IE R S t M I C R O T E C H N O L O C Y p p ai o • p a io a HT T P : / / W W W . A P E X M IC R OT E C H . C O M 80 0 546-A PEX (8 0 0 ) 546-2739 FEATURES • GAIN BANDWIDTH PRODUCT — 4MHz • TEMPERATURE R AN GE
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100kHz
PA10A
PA10MU
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kp531
Abstract: IS551
Text: ZVN4424A/C SPICE PARAMETERS * Z V N 4 4 2 4 M O D E L L A S T R E VIS IO N 1/94 .S U B C K T Z V N 4 4 2 4 30 40 50 * N O D E S : DRAIN G A T E S O U R C E M 1 30 20 50 50 M O D 1 L=1 W = 1 RG 40 20 200 RL 30 50 2 4 0 E 6 D1 50 30 DIODE1 . M O D E L M O D 1 N M O S VT0=1 .25 R S = 2 .3 4 R D = 1 .634 IS=1 E-15 KP=5.31 9
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ZVN4424A/C
6E-13
kp531
IS551
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LM308
Abstract: LM308 spice model 332E
Text: SPICE MACROMODELS TECHNOLOGY LM308 Macromodel ★ * * * * * * * Linear Technology LM308 op amp model Written: 08-23-1989 15:46:51 Type: Bipolar npn input, external comp. Typical s p e c s : V o s = 2 .0E-03, Ib=1.5E-09, Ios=2.0E-10, G B P = 6 .0E+05Hz, Phase m a r . = 70 deg,
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LM308
0E-03,
5E-09,
0E-10,
9E-01V/us,
300uA
LM308
460E-12
003E-06
LM308 spice model
332E
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR M ED IU M POWER TRANSISTOR I FMMT449 ISSU E 3 - NOVEM BER 1995_ FEATURES * Low equivalent on-resistance; RCE sat! 250mii at 1A C O M PLEM EN TARY TYPE PARTMARKING DETAIL - FMMT549 449 ABSOLUTE M A X IM U M RATINGS.
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FMMT449
250mii
FMMT549
cto40V,
300ns.
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Untitled
Abstract: No abstract text available
Text: h a rris HC55183, HC55184 S E M I C O N D U C T O R " " PRELIMINARY juiy 1998 Short Loop Ringing S LIC Description Features Integrated Battery Switch T he SSSsiSSS Silent Polarity Reversal H C 55183 HC55184 and Rin9ing S LIC s are s h o rt loop ringing
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HC55183,
HC55184
1-800-4-HARR
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Untitled
Abstract: No abstract text available
Text: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ZVN4210G _- ISSUE 2 - NOVEMBER 1995 FEATURES L o w R DS!on = 1.5Q P A R T M A R K IN G D E T A IL - Z V N 4 2 1 0 ABSOLUTE M A X IM U M RATINGS. PARAM ETER
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OT223
ZVN4210G
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aim dba he ng
Abstract: GE Capacitor
Text: h a r to s HC55180, HC55181, 02 S E M I C O N D U C T O R PRELIMINARY juiy 1998 Extended Reach Ringing SLIC Family Description Features jp p Battery Operation to 100V Peak Ringing Amplitude 95V, 5 REN extbnbbb Sinusoidal or Trapezoidal Ringing Capability ft b a c h
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HC55180,
HC55181,
HC55180
HC55181
HC55182
1-800-4-HARR
aim dba he ng
GE Capacitor
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX951 IS S U E 4 - J U N E 94 — 4 A m p s continuous current U p to 15 A m p s peak current Very low saturation voltage Excellent gain up to 10 A m p s Spice model available E E-Line TQ92 Compatible
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ZTX951
0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: SOT89 NPN SILICON PLANAR M EDIUM POWER TRANSISTOR FCX491A ISSUE 3 - OCTOBER 1995 FEATU RES * 1 A m p c o n tin u o u s current C O M P L E M E N T A R Y TYPE- FCX591A P A R T M A R K IN G D E T A IL S - N2 #• B ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L
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FCX591A
FCX491A
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R2A15218FP
Abstract: R2S15201 r2s15904sp R2S15205FP R2A15218 R2A15108SP R2S15201DD r2a15108fp R2A15906SP R2A15106NP
Text: 2007.10 Everywhere you imagine. ^ ICs for audio products w w w .re n e sa s.co m JUT'ltTviD^ —x -f :* IC R e n e s a s I C s for a u d io p r o d u c t s p ro v id e y o u r s y s t e m w ith o p tim u m p r e s e n c e . I7 > 5 1' y ^ ' i b T < D ^ S s f f i j g * « * f c f c f c 5 3 / « '> 7 > ^
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RJJ01F0001
R2A15218FP
R2S15201
r2s15904sp
R2S15205FP
R2A15218
R2A15108SP
R2S15201DD
r2a15108fp
R2A15906SP
R2A15106NP
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