GERMANIUM POWER Search Results

AC188

Abstract: AD156 AUY10 OC23 AC188-01 2N4106 AD157 ac128 2S8473 ADY20
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C 5 10 15 20 < NthAmerSemi Germanium See Index Space Power SemieonTech Solid Stine Solid Stine Solid Stine Solid Stine NthAmerSemi ~g~~~ ~ermanlum Germanium NthAmerSemi NthAmerSemi Germanium Germanium NthAmerSemi

MP3731

Abstract: MP2200A MP3730 O446 Motorola germanium transistor pnp MP2100A MP2000A MP2300A MP2400A germanium transistors PNP
Contextual Info: MP2100A, MP2200A, MP2300A, MP2400A GERMANIUM For Specifications, See MP2000A Data. MP3730 (GERMANIUM) MP3731 5 and 10 AMPERE POWER TRANSISTORS PNP GERMANIUM POWER TRANSISTORS PNP GERMANIUM EPITAXIAL BASE 200-320 VOLTS 56 WATTS PNP Germanium power transistors with the MP3730 designed

ADZ12

Abstract: DTG-1200 DTG-2400 germanium DTG2400 adz11 dtg1200 2N513A 2N2075A 2N2075
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C 5 10 15 20 >= 30 40 See Index See Index See Index Germanium Germanium SemieonTeeh Germanium See Index See Index See Index 15 15 15 15 15 15 15 15 15 15 ~~~~~~ ~eelndex ~~ 2N314S 2N2079 2N2079A 2N2S12 2Nl0318

ad143

Abstract: ASZ15 ASZ18 AUY37 ASZ16 GT906AM AUY35 AU113 ASZ17 AUY22A
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C 5 10 20 30 35 40 45 50 60 65 70 -75 80 - 85 90 Min See Index Germanium NthAmerSemi NthAmerSemi CentralSemi NthAmerSemi Germanium See Index See Index Germanium Max .(Hz) ~Y.D~a ~ml 75 250 60 22 25 25 25 32 32

Contextual Info: SGA-1263 Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block SGA-1263(Z) Preliminary DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar

SGA-1263Z

Abstract: SGA1263ZSQ trace code marking RFMD InP HBT transistor PHEMT marking code a SGA1263Z
Contextual Info: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain

TO36 package

Abstract: 2N2076 pnp germanium to36 TO36 TO41 dtg1210a 2N2076A 2N1560 2N1970 germanium
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C 5 10 15 20 - 25 30 >= 40 45 50 60 See Index See Index See Index See Index Germanium See Index See Index See Index See Index Germanium 15 15 15 15 15 15 15 15 15 15 ~~n~7 ~elnClex ~~ 2N1557A MP1557 2N2078 2N2078A

Contextual Info: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain

SGA1263Z

Abstract: SGA1263
Contextual Info: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain

SMO-14

Abstract: SLG 2016 D 2SK26 2N42 N4 TAM 2N425 marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426
Contextual Info: MIL-S-19500A1B EL See Section6 MILITARYSPECIFICATION SEMICONDUCTORDEVICE,TRANSISTOR,PNP, GERMANIUM,SWITCHING TYPSS 2N425,2Nb26, 2N42? 1. SCOPS 131 w.-. This specificationcovers the detail requirementsfor germanium PNP,“transietora for use in low-power switchingapplication

nte102

Abstract: NTE103 vpt 20 germanium transistors NPN NTE10-3
Contextual Info: NTE102 PNP & NTE103 (NPN) Germanium Complementary Transistors Power Output, Driver Description: The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium–speed saturated switching applications. Features: D Low Collector–Emitter Saturation Voltage:

MR830

Abstract: MP601 germanium power transistors MP600 MP602 MP603 Germanium power
Contextual Info: MP600 GERMANIUM thru PNP Germanium power transistors designed for highcurrent switching applications requiring low saturation voltages, short switching times and good sustaining volt­ age capability. • Alloy Diffused Epitaxial Construction • Low Saturation Voltages —

NTE105

Abstract: TO36 package pnp germanium to36 Germanium power
Contextual Info: NTE105 Germanium PNP Transistor Audio Power Amp Description: The NTE105 is a germanium PNP power transistor in a TO36 type package designed for use in power switching and amplifier applications. Absolute Maximum Ratings: Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V

NTE131MP

Abstract: NTE155 NTE131 germanium transistors NPN Germanium power
Contextual Info: NTE131 PNP & NTE155 (NPN) Germanium Complementary Transistors Audio Power Amplifier Description: The NTE131 (PNP) and NTE155 (NPN) are Germanium PNP Alloy Junction transistors in a Japanese TO66 type package designed for use in audio power amplifier applications.

"PNP Transistor"

Abstract: germanium transistor pnp GERMANIUM TRANSISTOR pnp germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS pnp transistor 6V transistor 200ma pnp GERMANIUM Germanium diode data sheet germanium pnp transistor
Contextual Info: NTE226 Germanium PNP Transistor Audio Power Amp Description: The NTE226 is a Germanium PNP transistor in a TO66 type package designed for high–fidelity, high– power output applications. Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V

2n2137

Contextual Info: , Una. <£tmL-donctwsto 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212) 227-6008 FAX: (973) 3764980 2N2137 (GERMANIUM) PNP germanium industrial power transistors for driver applications in high reliability equipment. MAXIMUM RATINGS

MARKING HBT

Abstract: SGA-1263 SGA-1263Z trace code marking RFMD SGA1263 18 sot-363 rf power amplifier InP HBT transistor
Contextual Info: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain

Contextual Info: , {Jna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4277 (GERMANIUM) PNP germanium power transistor designed for high current applications requiring high-gain and low saturation voltages.

Contextual Info: PreliminaryData Sheet PC3244TB Bipolar Analog Integrated Circuit 3.3 V, Silicon Germanium MMIC Medium Output Power Amplifier R09DS0015EJ0100 Rev.1.00 Mar 28, 2011 DESCRIPTION The μPC3244TB is a silicon germanium monolithic IC designed as IF amplifier for DBS tuners.

Contextual Info: PreliminaryData Sheet PC3244TB Bipolar Analog Integrated Circuit 3.3 V, Silicon Germanium MMIC Medium Output Power Amplifier R09DS0015EJ0100 Rev.1.00 Mar 28, 2011 DESCRIPTION The μPC3244TB is a silicon germanium monolithic IC designed as IF amplifier for DBS tuners.

motorola MP2400A

Abstract: MP2100A Motorola germanium transistor pnp MP2200A AN-415 MP2000A MP2300A MP2400A Germanium power
Contextual Info: MP2000A GERMANIUM MP2100A MP2200A MP2300A MP2400A PNP GERMANIUM POWER TRANSISTORS 25 AMPERES ADE POWER TRANSISTORS . . . designed fo r high-voltage switching, and pow er converter 30-120 VOLTS 106 WATTS applications. • A lloy-D iffused Epitaxial Construction

germanium Power Transistor

Abstract: Vcb-60V NTE27 Germanium power
Contextual Info: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high–gain and low saturation voltages. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V

germanium Power Transistor

Abstract: pnp germanium transistor germanium transistor pnp NTE27 GERMANIUM TRANSISTOR Germanium power
Contextual Info: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high-gain and low saturation voltages. Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V

NTE104M

Abstract: NTE104MP NTE104 transistor germanium germanium pnp transistor Germanium power 50V 1A PNP power transistor
Contextual Info: NTE104 Germanium PNP Transistor Audio Frequency Power Amplifier Description: The NTE104 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an audio frequency power output amplifier. Absolute Maximum Ratings: TA = +25°C unless otherwise specified