GMA MARKING Search Results

SB98107

Contextual Info: Bussmann 5 x 20mm Ferrule Fuses GMA GMA-V Fast-Acting 4A 5A 6A 2.5A 1A 5.54mm ±.20 3A Time-Current Characteristic Curves–Average Melt 1.25A 2A 38.10mm (±.38) 1.5A Dimensional Data 100 10mm 20mm (±2.0) (±0.5) 21.10mm (±.81) 5.2mm (+0.1/-0.2) 38.10mm

BGB420

Contextual Info: Preliminary BGB420 Active Biased Transistor BGB420 Features • For high gain low noise amplifiers • Ideal for wideband applications, cellular telephones, cordless telephones, SATTV and high frequency oscillators • Gma=17.5dB at 1.8GHz • Small SOT-343 package

gs 3935

Abstract: ZS 1032 BGA428 GPS05604 DCS1800 PCS1900 VPS05604 09035 pgs marking
Contextual Info: Preliminary BGA428 High Gain, Low Noise Amplifier BGA428 Features • • • • • • • 4 High gain, GMA=20dB at 1.8GHz Low noise figure, NF=1.4dB at 1.8GHz Prematched Ideal for GSM, DCS1800, PCS1900 Open collector output Typical supply voltage: 2.4-3V

d marking Micro-X

Abstract: BFY450 RF TRANSISTOR NPN MICRO-X
Contextual Info: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz • Hermetically sealed microwave package • Transition Frequency fT = 20 GHz

marking K "micro x"

Abstract: MICROWAVE TRANSITOR transistor "micro-x" "marking" 3 GHZ micro-X Package BFY450
Contextual Info: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-1dB = 19 dbm 1.8 GHz Max. available gain Gma = 16 dB at 1.8 GHz • Hermetically sealed microwave package • Transitor frequency fT = 20 GHz

Contextual Info: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor  For Medium Power Amplifiers  Hermetically sealed microwave package  Transition Frequency fT = 20 GHz  3 1 2 Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz

transistor 1T

Abstract: BFP650 equivalent
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4
For high power amplifiers
Ideal for low phase noise oscilators
Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz
Gold metallization for high reliability

BFP650 noise figure

Abstract: data sheet germanium diode germanium transistors NPN npn germanium BFP650
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4
For high power amplifiers
Ideal for low phase noise oscilators
Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz
Gold metallization for high reliability

093.266

Abstract: pin diagram of bf 494 transistor b 595 transistor schematic PA 1515 transistor transistor BF 502
Contextual Info: SIEMENS SIEGET 25 BFP 490 NPN Silicon RF Transistor Prelim inary data • For high power amplifiers • Compression point P_1dB = 26.5 dBm at 1.8 GHz maxim, available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency ^ > 1 7 GHz • Gold metalization for high reliability

gummel

Abstract: oscilators BFP650
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability

80mAF

Abstract: 6069 marking
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability

pin diagram of bf 494 transistor

Abstract: siemens products transistor
Contextual Info: SIEMENS SIEGET 25 BFP 490 NPN Silicon RF Transistor Preliminary data • For high power amplifiers • Compression point P-idB = 26 5 dBm at 1.8 GHz maxim, available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency f j > 17 GHz • Gold metalization for high reliability

BFP650

Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability

PH marking code

Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability

marking r5s

Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4
For high power amplifiers
Ideal for low phase noise oscilators
Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz
Gold metallization for high reliability

Micro-X marking "K"

Abstract: transistor "micro-x" "marking" 3 micro-X Package MARKING CODE C INFINEON DETAIL
Contextual Info: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor  For Medium Power Amplifiers  Hermetically sealed microwave package  Transition Frequency fT = 20 GHz  3 1 2 Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz

pin diagram of bf 494 transistor

Abstract: TA 8825 AN SOT-595 TA 8825 SCT-595 RF POWER marking 556 PIN CONFIGURATION IC ne 555 BF 949 transistor 09326 TRANSISTOR BO 346
Contextual Info: SIEGET 25 BFP 490 NPN Silicon RF Transistor Preliminary data 4 • For high power amplifiers 5 • Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency fT > 17 GHz 3 2 • Gold metalization for high reliability

TA 8644

Abstract: BFP690 SCT595 GMA marking
Contextual Info: BFP690 NPN Silicon Germanium RF Transistor 4 Preliminary data 5
For medium power amplifiers
Maxim. available Gain Gma = 17 dB at 1.8 GHz 3
Gold metallization for high reliability 2
70 GHz fT - Silicon Germanium technology 1 VPW05980 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFP650

Abstract: BGA420 T-25
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT- Silicon Germanium technology

BFP540F

Contextual Info: SIEGET
45 BFP540F NPN Silicon RF Transistor Preliminary data XYs
For highest gain low noise amplifier at 1.8 GHz 3 Outstanding Gma = 20 dB 2 4 Noise Figure F = 0.9 dB 1
Gold metallization for high reliability
SIEGET
45 - Line TSFP-4 to p v ie w !

RBS 3000

Abstract: BFP650 BFP650 noise figure BGA420 T-25 RBS INFINEON
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT - Silicon Germanium technology

Marking ANs

Abstract: Transistor C 5198 b 514 transistor BFP450
Contextual Info: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P. 1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency fT = 24 GHz • Gold metalization for high reliability

Contextual Info: SIEGET
45 BFP540F NPN Silicon RF Transistor Preliminary data XYs
For highest gain low noise amplifier at 1.8 GHz 3 Outstanding Gma = 20 dB 2 4 Noise Figure F = 0.9 dB 1
Gold metallization for high reliability
SIEGET
45 - Line TSFP-4 to p v ie w !

093.266

Abstract: 09326 V201200 equivalent transistor K 3531 IC 7479 SPICE 2G6 490 transistor BFP490
Contextual Info: SIEGET
25 BFP 490 NPN Silicon RF Transistor 4  For high power amplifiers  Compression point P-1dB = 26.5 dBm at 1.8 GHz 5 maxim. available Gain Gma = 8.5 dB at 1.8 GHz  Transition frequency fT > 17 GHz  Gold metallization for high reliability  SIEGET
25 GHz fT - Line