GR210 Search Results

RAW MATERIAL SPECIFICATION SHEET

Contextual Info: Rev B Date ÜEScripimn By 04/34/31 JSC GENERAL UPDATE 29.88±0.25 [1.176±.010] TABLE 1 - DIMENSIONS PART NUMBER GR210 - 00- 400 GR210—00—410 GR210—00—420 D raw n by; L ±0.30 [.012] 2.00 r.079] 2.54 r.1001 3.05 [.120] Date; J CACHINA 01/16/01 Lin u^]

AGR19045XF

Contextual Info: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

AGR21030EF

Abstract: 2.4 ghz mosfet AGR21030XF JESD22-C101A
Contextual Info: GR21030EF 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The GR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and

SSD1963

Abstract: SSD1963QL9 SSD1963 16 bit SSD1963G41
Contextual Info: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1963 Advance Information 1215KB Embedded Display SRAM LCD Display Controller This document contains information on a new product. Specifications and information herein are subject to change without notice. http://www.solomon-systech.com

J964

Abstract: AGR21045EF AGR21045XF JESD22-C101A
Contextual Info: Data Sheet GR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The GR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and

CDM 03

Abstract: AGR19045EF AGR19045XF CDR33BX104AKWS JESD22-C101A
Contextual Info: AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

21045F

Contextual Info: Preliminary Data Sheet May 2004 AGR26045E 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26045E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,

21045F

Abstract: AGR26045EF J500 JESD22-C101A c.d.m. technology acp transistor EP 430 TRANSISTOR MOSFET 2645
Contextual Info: AGR26045EF 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26045EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,

AGR21045E

Abstract: AGR21045EF AGR21045EU JESD22-C101A 178rf
Contextual Info: Data Sheet May 2004 GR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The GR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

Contextual Info: Preliminary Data Sheet June 2004 AGR26045EF 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26045EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,

RF POWER MOSFET

Abstract: J605 amphenol 24- 28 pf
Contextual Info: Preliminary Data Sheet June 2004 GR21030EF 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The GR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

AGR21030E

Abstract: AGR21030EF AGR21030EU JESD22-C101A
Contextual Info: Preliminary Data Sheet May 2004 GR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The GR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

RAW MATERIAL SPECIFICATION SHEET

Abstract: S2-0023
Contextual Info: DesmptTan D GENERAL UPDATE Date By 04/M/H ßC 17.26+0.25 [.680+.010] ACCEPTS 1.60±0.07 29.88±0.25 [1.176±.010] Rev [.063± .003] DEVICE 5.70 [.224] L f PRE—DEPOSITED SOLDER 8c FLUX 1.90 [.075] 4 > 2.48 [.098] 3 > 1.98 [.078] 10.44 [.411] TYP 1.905 [.0750]

Contextual Info: Doaipiim fifí ncnm oua c w Osle i» •Ä * JSC 3 4 .5 2 ± 0 .2 5 [1 .3 5 9 ± .0 1 0 ] ACCEPTS 1.6 0 ±0 .0 7 [,0 6 3 ± .0 0 3 ] DEVICE 5 .7 0 [.2 2 4 ] 1 8 .9 7 ± 0 .2 5 [,7 4 7 ± .0 1 0 ] r 9.8 5 [.3 8 8 ] PRE-DEPOSITED SOLDER & FLUX 1.90 [.0 7 5 ]