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    HEXFET POWER MOSFETS INTERNATIONAL RECTIFIER Search Results

    HEXFET POWER MOSFETS INTERNATIONAL RECTIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    HEXFET POWER MOSFETS INTERNATIONAL RECTIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    forsythe

    Abstract: INT-936 IRFP150 AN-941
    Text: Index AN- 941 v.Int PARALLELING HEXFET POWER MOSFETs (HEXFET Power MOSFET is the trademark for International Rectifier Power MOSFETs) Summary: • • • • • General guidelines Steady state sharing Dynamic sharing at turn-on Dynamic sharing at turn-off


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    forsythe

    Abstract: AN941 INT-936 how mosfets connect parallel IRFP150 IRFP150 equivalent
    Text: AN- 941 v.Int PARALLELING HEXFET POWER MOSFETs (HEXFET Power MOSFET is the trademark for International Rectifier Power MOSFETs) Summary: • • • • • General guidelines Steady state sharing Dynamic sharing at turn-on Dynamic sharing at turn-off Related topics


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    irf1010e equivalent

    Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
    Text: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N


    Original     		PDF O-220AB O-220 IRFZ24N* IRFIZ24N IRFD024 IRF1010E* IRFI1310N IRFD014 IRFZ44E* IRFI540N irf1010e equivalent irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent

    irf7309

    Abstract: IRF7507TR IRF7342 IRF7210 DO-30 IRLML2803TR IRF964
    Text: International Rectifier MOSFETs and Rectifiers MOSFETs Continued HEXFETª Power MOSFETs Ñ D2PAK (cont.) N-Channel (continued) Mfr.Õs Type IRF3710S IRF1310NS IRF540NS IRF530NS IRF3415S IRF3515S IRF3315S IRFS31N20D IRF640NS IRF630NS IRF644S IRF740S IRF710S


    Original     		PDF OT-223 IRF3710S IRF7324 IRF1310NS IRF731450 1N4049 300U80A† 150L10A† DO-30 irf7309 IRF7507TR IRF7342 IRF7210 IRLML2803TR IRF964

    mosfet power totem pole CIRCUIT

    Abstract: parallel connection of MOSFETs HEXFET Power MOSFET P-Channel hexfet audio amplifier IR power mosfet switching power supply 20V P-Channel Power MOSFET AN-950 AN-940 mosfet hexfet pair HEXFET Characteristics
    Text: AN- 940 v.Int How P-Channel HEXFET Power MOSFETs Can Simplify Your Circuit (HEXFET Power MOSFET is a trademark of International Rectifier’s Power MOSFETs) Topics covered: • Why P-Channel? • Basic characteristics • Grounded loads • How to regulate a voltage or current in a grounded load


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    tektronix 576 curve tracer

    Abstract: tektronix type 576 curve tracer tektronix 475 short circuit tracer IRF630 AN957 curve tracer INT-944 AN-957 Tracer 176
    Text: AN-957 v.Int Measuring HEXFETCharacteristics (HEXFET is the trademark for International Rectifier Power MOSFETs) Topics covered: • • • • • • • • • • • • • • • • • • • Converting the nomenclature from bipolars to MOSFETs


    Original     		PDF AN-957 tektronix 576 curve tracer tektronix type 576 curve tracer tektronix 475 short circuit tracer IRF630 AN957 curve tracer INT-944 AN-957 Tracer 176

    mosfet power totem pole CIRCUIT

    Abstract: IR power mosfet switching power supply AN-940 mosfet AN-950 HEXFET Power MOSFET P-Channel AN937 AN-948 P-channel HEXFET Power MOSFET parallel connection of MOSFETs hexfet audio amplifier
    Text: Index AN- 940 v.Int How P-Channel HEXFET Power MOSFETs Can Simplify Your Circuit (HEXFET Power MOSFET is a trademark of International Rectifier’s Power MOSFETs) Topics covered: • Why P-Channel? • Basic characteristics • Grounded loads • How to regulate a voltage or current in a grounded load


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    HEXFET III - A new Generation of Power MOSFETs

    Abstract: irf 1490 AN-964D irfc9024 AN-966 1000V P-channel MOSFET application new hexfet AN966 transistor 9527 IRFC210
    Text: APPLICATION NOTE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power


    OCR Scan     		PDF AN-955. AN-986. AN-966. -250V AN-964D HEXFET III - A new Generation of Power MOSFETs irf 1490 AN-964D irfc9024 AN-966 1000V P-channel MOSFET application new hexfet AN966 transistor 9527 IRFC210

    IRFC9130

    Abstract: irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430
    Text: APPLICATION NO TE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power


    OCR Scan     		PDF AN-955. AN-986. 0-60V AN-964D IRFC9130 irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430

    g371

    Abstract: IRFF330 IRFF331 IRFF332 IRFF333 510 MOSFET EC07 CIRCUIT g371
    Text: HE D | MöSSMSa QGCHB'ìM 0 | INTERNATIONAL Data Sheet No. PD-9.357E _ T-39-Û9 RECTIFIER INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IÖR IRFF330 IRFF331 N-CHAIUNEL POWER MOSFETs TO-39 PACKAGE IRFF33S IRFF333 400 Volt, 1.0 Ohm HEXFET Features: The HEXFET technology is the key to International


    OCR Scan     		PDF T-39-Ã G-376 g371 IRFF330 IRFF331 IRFF332 IRFF333 510 MOSFET EC07 CIRCUIT g371

    f422

    Abstract: transistor f422 tr f422 G-377 IRFF423 358E IRFF420 IRFF421 IRFF422 420 Diode 2ba
    Text: HE D I 4055452 INTERNATIONAL 0001400 2 | Data Sheet No. PD-9.358E RECTIFIER INTERNATIONAL RECTIFIER TOR T-39-09 HEXFET TRANSISTORS IRFF4SQ IRFF421 N-CHANNEL POWER MOSFETs TO-3S PACKAGE Q [I IRFF4SS IRFF4S3 500 Volt, 3.0 Ohm HEXFET Features: T he HEXFET® technology is the key to International


    OCR Scan     		PDF 0GGci400 T-39-09 G-382 f422 transistor f422 tr f422 G-377 IRFF423 358E IRFF420 IRFF421 IRFF422 420 Diode 2ba

    IRFH350

    Abstract: 412a L243 g602
    Text: HE D § 4 A5545E GQCHtiEE 1 | Data Sheet No. PD-9.412A INTERNATIONAL R E C T I F I E R T - i T ‘ / 3 INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFH35Q N-CHANNEL POWER MOSFETs 400 Volt, 0.3 Ohm HEXFET Features: The HEXFET® technology is the key to International


    OCR Scan     		PDF G-603 IRFH350 5S452 T-39-13 G-604 412a L243 g602

    mosfet j142

    Abstract: j143 J141 mosfet IRFJ142 J141 j142 IRFJ140 IRF 140 G527 IRFJ141
    Text: HE D I MÛSS4S2 OOQTSSQ 0 | Data Sheet No. PD-9.402A INTERNATIONAL R E C T I F I E R I«R INTERNATIONAL RECTIFIER T-39-11 IRFJ140 HEXFET TRANSISTORS IRFJ141 N-CHANNEL POWER MOSFETs IRFJ14 2 IRFJ143 100 Volt, 0.085 Ohm HEXFET The HEXFET® technology is the key to International


    OCR Scan     		PDF T-39-11 IRFJ140 IRFJ141 IRFJ142 IRFJ143 G-531 IRFJ140, IRFJ141, IRFJ142. IRFJ143 mosfet j142 j143 J141 mosfet J141 j142 IRF 140 G527

    TR C458

    Abstract: transistors c458 IRFP040 IRFP042 C458 C C459 TIL 220 L740 c458 c455
    Text: INTERNATIONAL RECTIFIER INTERNATIONAL H E D I 4Ö55455 T-39-13 Data Sheet No. PD-9.463A RECTIFIER INTERNATIONAL RECTIFIER HEXFET TRANSISTORS I« R IRFP040 IRFPQ42 N-CHANNEL POWER MOSFETs TO-S47AC PACKAGE Product Summary 50 Volt, 0.028 Ohm, HEXFET TO-247AC TO-3P Plastic Package


    OCR Scan     		PDF T-39-13 IRFP040 O-S47AC O-247AC 05BVDSS C-459 IRFP040, IRFP042 T-39-13 C-460 TR C458 transistors c458 IRFP040 C458 C C459 TIL 220 L740 c458 c455

    IRF9Z30

    Abstract: IRF9Z32 a510a RF92
    Text: HE 0 I MflSSMSE Q000b3b 4 | Data Sheet No. PD-9.471A INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IO R IRFSZ30 IRFSZ32 P-CHANNEL 5 0 VOLT POWER MOSFETs Features -50 Volt, 0.14 Ohm, HEXFET T0-220AB Plastic Package The HEXFET® technology is the key to International Rectifier’s


    OCR Scan     		PDF T0-220AB C-390 IRF9Z30 IRF9Z32 a510a RF92

    C641

    Abstract: No abstract text available
    Text: PD - 9.1413D International M R Rectifier IRLMS5703 HEXFET Power MOSFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET Vdss = "30V RDS(on) = 0.20Q Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize


    OCR Scan     		PDF 1413D IRLMS5703 OT-23. 100ps C641

    g419

    Abstract: G-424 g424 lg diode 923 TC1602e 384F IRFF130 IRFF9230 IRFF9231 IRFF9232
    Text: HE D I 4055452 □□0C!44E ? | Data Sheet No. PD-9.384F INTERNATIONAL R E C T IFIE R INTERNATIONAL RECTIFIER T -3 9 -1 9 HEXFET TRANSISTORS P-CHANNEL POWER MOSFETs TO-39 PACKAGE IRFF9231 G IRFFS232 ^—6s -200 Volt, 0.8 Ohm HEXFET Features: The HEXFET® technology is the key to International Rectifier’s


    OCR Scan     		PDF T-39-19 IRFFS230 IRFF9233 G-424 g419 G-424 g424 lg diode 923 TC1602e 384F IRFF130 IRFF9230 IRFF9231 IRFF9232

    IRF p 536 MOSFET

    Abstract: IRF 534 100-C IRFJ220 IRFJ221 IRFJ222 IRFJ223 FJ222 LG t
    Text: HE D I 4ÛSS45Z GaOTSSt, 0 | Data Sheet No. PD-9.403A T-39-11 INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER I « R IRFJSSO HEXFET TRANSISTORS IRFJ221 N-CHANNEL POWER MOSFETs IRFJ222 IRFJ223 200 Volt, 0.8 Ohm HEXFET T h e HEXFET® technology is the key to International


    OCR Scan     		PDF SS45Z T-39-11 G-537 IRFJ220, IRFJ221, IRFJ222, IRFJ223 G-538 IRF p 536 MOSFET IRF 534 100-C IRFJ220 IRFJ221 IRFJ222 IRFJ223 FJ222 LG t

    transistor equivalent irf510

    Abstract: 966a transistor equivalent irf740 irf460a HEXFET III - A new Generation of Power MOSFETs fet irf840 transistor equivalent irf520 IRF83Q AN949A High frequency switching AN-966A
    Text: APPLICATION NOTE 966A HEXFET III: A New Generation of Power MOSFETs H EXFET is a tra d e m a rk o f In te rn a tio n a l R ectifie r by D. Grant Introduction International Rectifier has introduc­ ed a new third-generation of HEXFET power MOSFETs, the HEXFET III.


    OCR Scan     		PDF

    IRFIP450

    Abstract: IRFIP150 IRFIP250 IRFIP350 THOMSON DISTRIBUTOR 58e d IRFIP244 IRFI630 THOMSON 58E THOMSON 58E CASE OUTLINE THOMSON DISTRIBUTOR
    Text: THOMSON/ DISTRIBUTOR sflE ç m Toab a73 ooos?^? 330 • tcs< HEXFET Power MOSFETs International .'*»1Rectifier FullPak N-Charmel New Product FullPak Fully-isolated HEXFETs International Rectifier is proud to introduce its FullPak line of fullyisolated power MOSFETs. Available in popular-sized package outlines,


    OCR Scan     		PDF 000S7T7 O-220 O-247 IRFIP044 IRFIP054 IRFIP140 IRFIP150 T0-247AC IRFIP240 IRFIP250 IRFIP450 IRFIP350 THOMSON DISTRIBUTOR 58e d IRFIP244 IRFI630 THOMSON 58E THOMSON 58E CASE OUTLINE THOMSON DISTRIBUTOR

    F9232

    Abstract: IRF9233 Irf9230
    Text: HE D I 4ÖSSM52 GOO^Et. 1 | Data Sheet No. PD-9.349D INTERNATIONAL R E C T I F I E R 1 -3 ? ^ f INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFS230 IRF9S3Ì P-CHANIMEL 2 0 0 VOLT IRF9S3S POWER MOSFETs IRF9S33 -200 Volt, 0.8 Ohm HEXFET Features: The HEXFET technology is the key to International Rectifier’s


    OCR Scan     		PDF SSM52 IRFS230 IRF9S33 G-208 F9232 IRF9233 Irf9230

    irf P-Channel MOSFET audio

    Abstract: IRF610 complementary F9622 IRF9623 power MOSFET IRF610 IRF9621 rf9620 irf9622 k 3919 F9620
    Text: HE D I MÖSS452 INTERNATIONAL GOüöbDb Data Sheet No. PD-9.351E b | RECTIFIER T-39-19 INTERNATIONAL RECTIFIER TOR HEXFET TRANSISTORS IRFS620 IRFSG21 P-CHANNEL aoo VOLT IRF9GSS POWER MOSFETs IRF9623 -200 Volt, 1.5 Ohm HEXFET T0-220AB Plastic Package Features:


    OCR Scan     		PDF SS452 T-39-19 IRFS620 IRFSG21 T0-220AB IRF9620, IRF9621, IRF9622, IRF9623 irf P-Channel MOSFET audio IRF610 complementary F9622 power MOSFET IRF610 IRF9621 rf9620 irf9622 k 3919 F9620

    diode c446

    Abstract: C446 0023I diode c445 diode c448
    Text: P D -9.1671 International IQR Rectifier IRFZ44E HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175 °C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 60V Ros on = 0.023ÎÎ lD = 48A Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize


    OCR Scan     		PDF IRFZ44E O-220 C-448 diode c446 C446 0023I diode c445 diode c448

    IRFI530

    Abstract: IRFI840 IRFIP450 TO-247 FULLPAK Package IRFIP244
    Text: HEXFET International ül ]Rectifier Power MOSFETs FullPak N-Channel New Product FullPak Fully-isolated HEXFETs International Rectifier is proud to introduce its FullPak line of fullyisolated power MOSFETs. Available in popular-sized package outlines, these devices are designed to provide ease of use, lower costs of


    OCR Scan     		PDF O-220 O-247 IRFIP044 IRFIP054 IRFIP140 IRFIP150 IRFIP240 IRFIP250 IRFIP244 IRFI530 IRFI840 IRFIP450 TO-247 FULLPAK Package