HFE CLASSIFICATION MARKING 24 Search Results

2SD1819A

Abstract: transistor ZR 2SD1819AR 2SB1218A 2SD1819AS 2SD1819A-R 2SD1819A-S
Contextual Info: 2SD1819A 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente 24 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES High DC Current Gain. Low collector to emitter saturation voltage VCE sat . Complementary to 2SB1218A

maximum gain s2p

Contextual Info: A Business Partner of Renesas Electronics Corporation. Preliminary NESG210719 Data Sheet NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 3-Pin Ultra Super Minimold 19, 1608 PKG <R> R09DS0051EJ0400 Rev.4.00 Sep 24, 2012 FEATURES • The NESG210719 is an ideal choice for OSC, low noise, high-gain amplification

transistor marking hy

Abstract: 2SA2154MFV 2SC6026MFV PCT 245
Contextual Info: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications High voltage and high current • Complementary to 2SA2154MFV • Lead (Pb) - free 1.2 ± 0.05 : hFE = 120~400 3 Unit Collector-base voltage

2SA2154MFV

Abstract: 2SA21 2SC6026MFV 21l1A 2sc602
Contextual Info: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity

hFE CLASSIFICATION Marking CE

Abstract: 2SC3325
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3325 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High voltage: VCEO = 50 V min . 1 Small package. 0.55 Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA). +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features

2SA1588

Abstract: 2SC4118
Contextual Info: 2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1588 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm Switching Applications • Excellent hFE linearity : hFE (2) = 25 (min) • Complementary to 2SC4118

2SA1182

Abstract: 2SC2859
Contextual Info: 2SA1182 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1182 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm Switching Applications • Excellent hFE linearity : hFE (2) = 25 (min) • Complementary to 2SC2859.

2SA1588

Abstract: 2SC4118 toshiba marking
Contextual Info: 2SC4118 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4118 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm Switching Applications • Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)

Contextual Info: 2SC2859 TOSHIBA Transistor Silicon NPN Epitaxial PCT process 2SC2859 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • • Unit: mm Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)

2SA1213

Abstract: pnp hfe 120-240 2SA1213Y 2SA1213-O
Contextual Info: 2SA1213 MCC TM Micro Commercial Components Features x x x x x 2SA1213-O
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1213-Y PNP Silicon Epitaxial Transistors Low Saturation voltage: VCE sat =0.5V(max.)(IC=1.0A)

pnp hfe 120-240

Contextual Info: MCC TM Micro Commercial Components Features • • • • • PNP Silicon Epitaxial Transistors Low Saturation voltage: VCE sat =0.5V(max.)(IC=1.0A) Small flat package PC=1.0 to 2.0W(mounted on ceramic substrate) High Speed Switching Time : tstg =1.0µs(typ.)

2SA1182

Abstract: 2SC2859
Contextual Info: 2SC2859 TOSHIBA Transistor Silicon NPN Epitaxial PCT process 2SC2859 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • · Unit: mm Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)

2N464

Abstract: 2N464 equivalent transistor c 3206 Transistor 63B 2N465 2N467 e fzr 2N464 JAN MIL-T-19500/52B
Contextual Info: MIL-s-19500/49c EL 24 nay 1968 SUPERSEDING: See Section 6 MILITASY SPECIF1CATION SE-fICONDUCTOR DEVICE, TRANSISTOR, PNP, CEFMANIUM TYPES 2N464, 2N465, 2N467 I ‘o 1, SCOPE 1.1 =. - ThLs specification cOver$ the detail rewireaents for germanium, PNP, transistors for use in Low-pawer, amp Lifier applications in compatible

hFE CLASSIFICATION Marking 24

Abstract: KTA1505S KTC3876S
Contextual Info: SEMICONDUCTOR KTC3876S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ᴌExcellent hFE Linearity ᴌComplementary to KTA1505S. H 1 P Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage

marking wg

Abstract: WY smd hFE CLASSIFICATION Marking smd wg hFE CLASSIFICATION Marking CE 2SC2859 Marking WO smd sot23 marking wy
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC2859 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 Excellent hFE linearity : hFE 2 = 25 (min) (VCE = 6 V, IC = 400 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1

Contextual Info: 2SA1313 SILICON PNP EPITAXIAL TYPE AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS. Unit in mm + CL5 & 5 -Q 3 + 0.2 5 DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. i.5-ai 5 EE- FEATURES: . Excellent hpg Linearity : hj?g 2 = 25(Min.) at V c e =-6V. Ic=-400mA

Transistor hFE CLASSIFICATION Marking CE

Abstract: KTX111T
Contextual Info: SEMICONDUCTOR KTX111T TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES E K ᴌIncluding two devices in TS6. 1 6 G 2 5 G Thin Super Mini type with 6 pin K B 3 4 DIM A B C D E 6 5 C 4 J Marking Q1 h FE Rank Q2 Type Name

Contextual Info: SEMICONDUCTOR KTX111T TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES E K Including two devices in TS6. 1 6 G 2 5 G Thin Super Mini type with 6 pin K B 3 4 DIM A B C D E 5 4 F G 0.95 H I _ 0.05 0.16 + 0.00-0.10 J

Transistor hFE CLASSIFICATION Marking CE

Abstract: hFE CLASSIFICATION Marking CE KTX111T
Contextual Info: SEMICONDUCTOR KTX111T TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES E K ᴌIncluding two devices in TS6. 1 6 G 2 5 G Thin Super Mini type with 6 pin K B 3 4 DIM A B C D E 5 4 I 6 C EQUIVALENT CIRCUIT (TOP VIEW)

2SA2154MFV

Abstract: 2SC6026MFV
Contextual Info: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)

KTX111T

Abstract: Transistor hFE CLASSIFICATION Marking CE hFE CLASSIFICATION Marking CE
Contextual Info: SEMICONDUCTOR KTX111T TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES E K Including two devices in TS6. 1 6 G 2 5 G Thin Super Mini type with 6 pin K B 3 4 DIM A B C D E 5 4 F G 0.95 H I _ 0.05 0.16 + 0.00-0.10 J

2SA1182

Abstract: 2SC2859
Contextual Info: 2SA1182 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1182 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA

2SA2154MFV

Abstract: 2SC6026MFV
Contextual Info: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity

2SA1588

Abstract: 2SC4118
Contextual Info: 2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1588 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA