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    HFE CLASSIFICATION MARKING 24 Search Results

    HFE CLASSIFICATION MARKING 24 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    HFE CLASSIFICATION MARKING 24 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD1819A

    Abstract: transistor ZR 2SD1819AR 2SB1218A 2SD1819AS 2SD1819A-R 2SD1819A-S
    Text: 2SD1819A 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente 24 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES High DC Current Gain. Low collector to emitter saturation voltage VCE sat . Complementary to 2SB1218A


    Original     		PDF 2SD1819A OT-323 2SB1218A 2SD1819A-Q 2SD1819A-R 2SD1819A-S 24-Feb-2011 100mA 100mA, 200MHz 2SD1819A transistor ZR 2SD1819AR 2SB1218A 2SD1819AS 2SD1819A-S

    maximum gain s2p

    Abstract: No abstract text available
    Text: A Business Partner of Renesas Electronics Corporation. Preliminary NESG210719 Data Sheet NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 3-Pin Ultra Super Minimold 19, 1608 PKG <R> R09DS0051EJ0400 Rev.4.00 Sep 24, 2012 FEATURES • The NESG210719 is an ideal choice for OSC, low noise, high-gain amplification


    Original     		PDF NESG210719 R09DS0051EJ0400 NESG210719 NESG210719-T1 NESG210719-A NESG210719-T1-A maximum gain s2p

    transistor marking hy

    Abstract: 2SA2154MFV 2SC6026MFV PCT 245
    Text: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications High voltage and high current • Complementary to 2SA2154MFV • Lead (Pb) - free 1.2 ± 0.05 : hFE = 120~400 3 Unit Collector-base voltage


    Original     		PDF 2SC6026MFV 2SA2154MFV transistor marking hy 2SA2154MFV 2SC6026MFV PCT 245

    2SA2154MFV

    Abstract: 2SA21 2SC6026MFV 21l1A 2sc602
    Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity


    Original     		PDF 2SA2154MFV 2SC6026MFV 2SA2154MFV 2SA21 2SC6026MFV 21l1A 2sc602

    hFE CLASSIFICATION Marking CE

    Abstract: 2SC3325
    Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3325 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High voltage: VCEO = 50 V min . 1 Small package. 0.55 Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA). +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features


    Original     		PDF 2SC3325 OT-23 hFE CLASSIFICATION Marking CE 2SC3325

    2SA1588

    Abstract: 2SC4118
    Text: 2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1588 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm Switching Applications • Excellent hFE linearity : hFE (2) = 25 (min) • Complementary to 2SC4118


    Original     		PDF 2SA1588 2SC4118 SC-70 2SA1588 2SC4118

    2SA1182

    Abstract: 2SC2859
    Text: 2SA1182 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1182 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm Switching Applications • Excellent hFE linearity : hFE (2) = 25 (min) • Complementary to 2SC2859.


    Original     		PDF 2SA1182 2SC2859. 2SA1182 2SC2859

    2SA1588

    Abstract: 2SC4118 toshiba marking
    Text: 2SC4118 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4118 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm Switching Applications • Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)


    Original     		PDF 2SC4118 2SA1588 2SA1588 2SC4118 toshiba marking

    Untitled

    Abstract: No abstract text available
    Text: 2SC2859 TOSHIBA Transistor Silicon NPN Epitaxial PCT process 2SC2859 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • • Unit: mm Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)


    Original     		PDF 2SC2859 2SA1182. O-236MOD SC-59

    2SA1213

    Abstract: pnp hfe 120-240 2SA1213Y 2SA1213-O
    Text: 2SA1213 MCC TM Micro Commercial Components Features x x x x x 2SA1213-O   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1213-Y PNP Silicon Epitaxial Transistors Low Saturation voltage: VCE sat =0.5V(max.)(IC=1.0A)


    Original     		PDF 2SA1213 2SA1213-O 2SA1213-Y 05Adc) 10Vdc, 2SA1213 pnp hfe 120-240 2SA1213Y

    pnp hfe 120-240

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components Features • • • • • PNP Silicon Epitaxial Transistors Low Saturation voltage: VCE sat =0.5V(max.)(IC=1.0A) Small flat package PC=1.0 to 2.0W(mounted on ceramic substrate) High Speed Switching Time : tstg =1.0µs(typ.)


    Original     		PDF 2SA1213 OT-89 05Adc) 10Vdc, pnp hfe 120-240

    2SA1182

    Abstract: 2SC2859
    Text: 2SC2859 TOSHIBA Transistor Silicon NPN Epitaxial PCT process 2SC2859 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • · Unit: mm Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)


    Original     		PDF 2SC2859 2SA1182. 2SA1182 2SC2859

    2N464

    Abstract: 2N464 equivalent transistor c 3206 Transistor 63B 2N465 2N467 e fzr 2N464 JAN MIL-T-19500/52B
    Text: MIL-s-19500/49c EL 24 nay 1968 SUPERSEDING: See Section 6 MILITASY SPECIF1CATION SE-fICONDUCTOR DEVICE, TRANSISTOR, PNP, CEFMANIUM TYPES 2N464, 2N465, 2N467 I ‘o 1, SCOPE 1.1 =. - ThLs specification cOver$ the detail rewireaents for germanium, PNP, transistors for use in Low-pawer, amp Lifier applications in compatible


    Original     		PDF MIL-s-19500/49c 2N464, 2N465, 2N467 140nmouth, 2N464 2N464 equivalent transistor c 3206 Transistor 63B 2N465 2N467 e fzr 2N464 JAN MIL-T-19500/52B

    hFE CLASSIFICATION Marking 24

    Abstract: KTA1505S KTC3876S
    Text: SEMICONDUCTOR KTC3876S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ᴌExcellent hFE Linearity ᴌComplementary to KTA1505S. H 1 P Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage


    Original     		PDF KTC3876S KTA1505S. 400mA. 100mA 400mA 100mA, 25Min. 40Min. hFE CLASSIFICATION Marking 24 KTA1505S KTC3876S

    marking wg

    Abstract: WY smd hFE CLASSIFICATION Marking smd wg hFE CLASSIFICATION Marking CE 2SC2859 Marking WO smd sot23 marking wy
    Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC2859 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 Excellent hFE linearity : hFE 2 = 25 (min) (VCE = 6 V, IC = 400 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


    Original     		PDF 2SC2859 OT-23 100mA 400mA marking wg WY smd hFE CLASSIFICATION Marking smd wg hFE CLASSIFICATION Marking CE 2SC2859 Marking WO smd sot23 marking wy

    Transistor hFE CLASSIFICATION Marking CE

    Abstract: KTX111T
    Text: SEMICONDUCTOR KTX111T TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES E K ᴌIncluding two devices in TS6. 1 6 G 2 5 G Thin Super Mini type with 6 pin K B 3 4 DIM A B C D E 6 5 C 4 J Marking Q1 h FE Rank Q2 Type Name


    Original     		PDF KTX111T 600mm Transistor hFE CLASSIFICATION Marking CE KTX111T

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTX111T TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES E K Including two devices in TS6. 1 6 G 2 5 G Thin Super Mini type with 6 pin K B 3 4 DIM A B C D E 5 4 F G 0.95 H I _ 0.05 0.16 + 0.00-0.10 J


    Original     		PDF KTX111T 600mm

    Transistor hFE CLASSIFICATION Marking CE

    Abstract: hFE CLASSIFICATION Marking CE KTX111T
    Text: SEMICONDUCTOR KTX111T TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES E K ᴌIncluding two devices in TS6. 1 6 G 2 5 G Thin Super Mini type with 6 pin K B 3 4 DIM A B C D E 5 4 I 6 C EQUIVALENT CIRCUIT (TOP VIEW)


    Original     		PDF KTX111T 600mm Transistor hFE CLASSIFICATION Marking CE hFE CLASSIFICATION Marking CE KTX111T

    2SA2154MFV

    Abstract: 2SC6026MFV
    Text: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV

    KTX111T

    Abstract: Transistor hFE CLASSIFICATION Marking CE hFE CLASSIFICATION Marking CE
    Text: SEMICONDUCTOR KTX111T TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES E K Including two devices in TS6. 1 6 G 2 5 G Thin Super Mini type with 6 pin K B 3 4 DIM A B C D E 5 4 F G 0.95 H I _ 0.05 0.16 + 0.00-0.10 J


    Original     		PDF KTX111T 600mm KTX111T Transistor hFE CLASSIFICATION Marking CE hFE CLASSIFICATION Marking CE

    2SA1182

    Abstract: 2SC2859
    Text: 2SA1182 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1182 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA


    Original     		PDF 2SA1182 2SC2859. 2SA1182 2SC2859

    2SA2154MFV

    Abstract: 2SC6026MFV
    Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity


    Original     		PDF 2SA2154MFV 2SC6026MFV 2SA2154MFV 2SC6026MFV

    2SA1588

    Abstract: 2SC4118
    Text: 2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1588 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA


    Original     		PDF 2SA1588 2SC4118 2SA1588 2SC4118

    Untitled

    Abstract: No abstract text available
    Text: 2SA1313 SILICON PNP EPITAXIAL TYPE AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS. Unit in mm + CL5 & 5 -Q 3 + 0.2 5 DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. i.5-ai 5 EE- FEATURES: . Excellent hpg Linearity : hj?g 2 = 25(Min.) at V c e =-6V. Ic=-400mA


    OCR Scan     		PDF 2SA1313 -400mA 2SC3325 -100mA -100mA, -10mA -20mA 40Min.