HIGH-SPEED OPTOELECTRONICS Search Results

GAP300

Abstract: 10E-15 GPD optoelectronics GAP100
Contextual Info: GPD GAP60 GAP60CS GAP75 GAP100 GAP300 High Speed InGaAs Photodiodes High Responsivity High Shunt Resistance Low Capacitance: High Speed Planar Design for High Reliability GPD Optoelectronics Corp. GPDOS00002 GAP60 GAP60CS GAP75 GAP100 GAP300 E sWBfl GAP60/CS

GAP100

Abstract: GAP300 Germanium Power Diodes GAP75 GAP60CS GAP60 10E-15 Germanium power Photodiodes Germanium PIN TO46
Contextual Info: GAP60 GAP60CS GAP75 GAP100 GAP300 GPD OPTOELECTRONICS CORP. High Speed InGaAs Photodiodes • High Responsivity • High Shunt Resistance • Low Capacitance: High Speed • Planar Design for High Reliability GPD Optoelectronics Corp. GAP60 GAP60CS GAP75 GAP100 GAP300

VOW2201

Abstract: HCPL-2211 sop5 package
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOCOUPLERS Optoelectronics - High Speed Optocouplers in Multiple Packages High Speed High-Speed Optocouplers FEATURES APPLICATIONS • JEDEC-compatible • Industrial communication buses • Reinforced insulation

2SK221

Abstract: DIODE T25 4 io 2SK220 H241 HITACHI 2SK* TO-3
Contextual Info: 44TbBD5 001301Ö Ibb • HIT4 blE D 2SK220H, 2SK2 21H HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING , HIGH FREQUENCY POWER AMPLIFIER ■ FEATURES • High Speed Switching. • High Cutoff Frequency. • Enhancement-Mode. •

2SK298

Abstract: 2SK299 J-10 diode vu J10 DIODE HITACHI 2SK* TO-3
Contextual Info: IHIT4 4MTb205 G013024 4bT blE D 2SK298,2SK299 HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING , HIGH FREQUENCY POWER AMPLIFIER • FEATURES • Low On-Resistance. • High Speed Switching. • High Cutoff Frequency. • No Secondary Breakdown.

2SK221

Abstract: 2SK220 H241 HITACHI 2SK* TO-3
Contextual Info: 44TbBD5 001301Ö Ibb • HIT4 blE D 2SK220H, 2SK2 21H HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL M O S FET HIGH SPEED POWER SW ITCHING , HIGH FREQUENCY POWER AMPLIFIER ■ FEATURES • High Speed Switching. • High Cutoff Frequency. • Enhancement-Mode.

2sk298

Abstract: 2SK299 3tb 40 Hitachi Scans-001
Contextual Info: 44<ib205 G013024 blE D IHIT4 4bT 2SK298,2SK299 HITACHI/C OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING , HIGH FREQUENCY POWER AMPLIFIER • FEATURES • Low On-Resistance. • High Speed Switching. • High Cutoff Frequency. • No Secondary Breakdown.

2SK299

Abstract: 2SK298 HITACHI 2SK* TO-3
Contextual Info: 44Tb2G5 G013G24 4bT • H I T 4 blE D 2SK298,2SK299 HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING. HIGH FREQU EN CY POWER AMPLIFIER ■ FEATURES • Low On-Resistance. • High Speed Switching. • High Cutoff Frequency. •

vishay 6N136

Abstract: TLP2630 application not tlp559 AVAGO 2200 A 2630 DIP8 PC9D10 mosFET K 2611 A 4503 A 4503 ic K6N135
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . Optoelectronics - High Speed Optocouplers in Multiple Packages AND TEC I INNOVAT O L OGY High Speed N HN OPTOCOUPLERS O 19 62-2012 High-Speed Optocouplers FEATURES APPLICATIONS • JEDEC-compatible • Industrial communication buses

2SK308

Contextual Info: MMTbEGS DD13D57 17T • H I T M 2SK308 HITACHI/ OPTOELECTRONICS blE Í SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER ■ FEATURES • Low On-Resistance. • High Speed Switching. • High Cutoff Frequency. • No Secondary Breakdown.

Contextual Info: TIED56 Avalanche Photodiode Texas Optoelectronics, Inc. OPTIMIZED FOR HIGH-SPEED DETECTION OF NEAR-INFRARED RADIANT ENERGY DESCRIPTION FEATURES The TIED56 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the

Contextual Info: TIED56 Avalanche Photodiode Texas Optoelectronics, Inc. OPTIMIZED FOR HIGH-SPEED DETECTION OF NEAR-INFRARED RADIANT ENERGY DESCRIPTION FEATURES The TIED56 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the

Contextual Info: TIED59 Avalanche Photodiode Texas Optoelectronics, Inc. OPTIMIZED FOR HIGH-SPEED DETECTION OF NEAR-INFRARED RADIANT ENERGY DESCRIPTION FEATURES The TIED59 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the

Contextual Info: TIED56 Avalanche Photodiode Taxas Optoelectronics, Inc. OPTIMIZED FOR HIGH-SPEED DETECTION OF NEAR-INFRARED RADIANT ENERGY DESCRIPTION FEATURES The TIED56 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the

2SK260

Abstract: 2SK259 t7y25 HITACHI 2SK* TO-3
Contextual Info: blE D MM'JbHQS 0013Ü22 bT? • H I T M HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING . HIGH FREQUENCY POWER AMPLIFIER ■ FEATURES • High Speed Switching. • High Cutoff Frequency. • High Breakdown Voltage. • Suitable for Switching Regulator, DC-DC Con­

LM6629

Contextual Info: LMH6629 LMH6629 Ultra-Low Noise, High-Speed Operational Amplifier with Shutdown Literature Number: SNOSB18E LMH6629 Ultra-Low Noise, High-Speed Operational Amplifier with Shutdown General Description Features The LMH6629 is a high-speed, ultra low-noise amplifier designed for applications requiring wide bandwidth with high

2SK399

Abstract: 2SJ113 44TB2 diode lo2a GG13 J-10 Hitachi Scans-001
Contextual Info: MMTbEGS GOlBGHfc, Q5G • H I T M 2SK399 HITACHI/ OPTOELECTRONICS b lE ]) SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ113 I N ■ FEATURES • Low On-Resistance. • High Speed Switching.

diode 1n4009

Abstract: 1N4009
Contextual Info: 1N4009 Ultra high speed diode. Working inverse voltage 25 V. 3.72 Diodes High-Speed/. Page 1 of 1 Enter Your Part # Home Part Number: 1N4009 Online Store 1N4009 Diodes Ultra high speed diode. Working inverse voltage 25 V. Transistors Integrated Circuits

2SK351

Abstract: HITACHI 2SK* TO-3
Contextual Info: HH'ìbSGi G013D37 016 • H I T 4 2SK351 H IT AC HI / OPTOELECTRONICS SILICON N-CHANNEL MOS FET blE » II« . |i i t »j (3A]f) HIGH SPEED POWER SWITCHING. HIGH FREQUENCY POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • High Speed Switching.

sj56

Contextual Info: MMTbSDS OÜIETG! 103 • H I T H blE D HITACHI/ OPTOELECTRONICS SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER ■ FEATURES • High Speed Switching. • High Cutoff Frequency. (/c= 1M Hz) • Enhancement-Mode. • Suitable for Sw itching Regulator,

Contextual Info: HIGH-SPEED AIGaAS SCHMITT TRIGGER OPTOCOUPLERS OPTOELECTRONICS H11N1 H11N2 H11N3 PACKAGE DIMENSIONS DESCRIPTION The H11N series has a medium-to-high speed integrated circuit detector optically coupled to a gallium-aluminumarsenide infrared emitting diode. The output incorporates

vhc04

Abstract: 74HC04 74VHC04 74VHC04M 74VHC04MTC 74VHC04N 74VHC04SJ M14A M14D MTC14
Contextual Info: 74VHC04 Hex Inverter Features General Description • High Speed: tPD = 3.8ns typ. at VCC = 5V ■ High noise immunity: VNIH = VNIL = 28% VCC (min.) The VHC04 is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent

Contextual Info: 74VHCT04A Hex Inverter Features General Description • High speed: tPD = 4.7ns Typ. at TA = 25°C ■ High noise immunity: VIH = 2.0V, VIL = 0.8V The VHCT04A is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent

74VHCT04AM

Abstract: 74VHCT04AMTC 74VHCT04AMTCX 74VHCT04AMX 74VHCT04ASJ M14A M14D VHCT04A 74HCT04 74VHCT04A
Contextual Info: 74VHCT04A Hex Inverter tm Features General Description • High speed: tPD = 4.7ns Typ. at TA = 25°C ■ High noise immunity: VIH = 2.0V, VIL = 0.8V The VHCT04A is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent