HY51V17404B Search Results

gi115

Contextual Info: -«YUNDWI — • H Y M 5 V 6 4 4 1 4 B K - S e r ie s Unbuffered 4Mx64 bit EDO DRAM MODULE based on 4Mx4 DRAM, 3.3V, 2K-Refresh GENERAL DESCRIPTION The HYM 5V64414B K-Series is a 4Mx64-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY51V17404B in 24/26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy

hyundai hy 214

Abstract: UL-96 SH17 wl33
Contextual Info: • HYUNDAI HY51V17404B, HY51V16404B 4M x 4-bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION T his fa m ily is a 16M bit dynam ic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out m ode CM O S DRAMs. Extended Data Out mode

DG37

Contextual Info: -H Y U N D A I ^ - J • HYM5V72A414A K-Series 4Mx72-bit CMOS DRAM MODULE Unbuffered with EXTENDED DATA OUT DESCRIPTION The HYM5V72A414A is a 4M x 72-bit EDO mode CMOS DRAM module consisting of eighteen HY51V17404B in 24/26 pin SOJ orTSOPII and one 2048 bit EEPROM on a 168 pin glass-epoxy printed

Contextual Info: HYM5V64414B N-Series Buffered 4Mx64 bit EDO DRAM MODULE based on 4Mx4 DRAM, 3.3V, 2K-Refresh GENERAL DESCRIPTION The HYM5V64414B N-Series is a 4Mx64-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY51V17404B in 24/26 pin SOJ or TSOP-II and two 16-bit BiCMOS line driver in TSSOP on a 168

HY51V17404B

Contextual Info: “H Y U N D A I HY51V17404B Series 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY51V17404B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17404B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: C "HYUNDAI • HY51V17404B.HY51 V16404B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

Contextual Info: HYM5V72A414B K-Series Unbuffered 4Mx72 bit EDO DRAM MODULE based on 4Mx4 DRAM, with ECC, 3.3V, 2K-Refresh GENERAL DESCRIPTION The HYM5V72A414B K-Series is a 4Mx72-bit Extended Data Out mode CMOS DRAM module consisting of eighteen HY51V17404B in 24/26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy

HY51V17404B

Abstract: 4mx4
Contextual Info: HY51V17404B,HY51V16404B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

HY5118164B

Abstract: hy5118160b HY5118160 HY51V65400TC HY5117804B
Contextual Info: DRAM PRODUCT 16Mbit As of '96.3Q DESCRIPTION PART NO. 4M x 4 EDO,2< Ref. 3.3V PACKAGE OPTION ACCESS TIME ns OPERATING CURRENT (mA.MAX) STANDBY CURRENT (mA,MAX) TTL CMOS AVAILABILITY HY51V17404A SO JJSO P I (300mil) 60/70/80 120/100/90 l 0.5 NOW HY51V17404B

Contextual Info: HYM5V72A414B N-Series Buffered 4Mx72 bit EDO DRAM MODULE based on 4Mx4 DRAM, with ECC, 3.3V, 2K-Refresh GENERAL DESCRIPTION The HYM5V72A414B N-Series is a 4Mx72-bit Extended Data Out mode CMOS DRAM module consisting of eighteen HY51V17404B in 24/26 pin SOJ or TSOP-II and two 16-bit BiCMOS line driver in TSSOP on a 168

WAOQ

Abstract: HY51V174 HY51V17404BJ
Contextual Info: HY51V17404B Series •HYUNDAI 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION T h e H Y 5 1 V 1 7 4 0 4 B is the n ew g e n e ra tio n a nd fa s t d y n a m ic R A M org a n ize d 4 ,1 9 4 ,3 0 4 x 4-bit. T h e H Y 5 1 V 1 7 4 0 4 B utiliz e s H y u n d a i's C M O S s ilicon g a te p ro ce ss te c h n o lo g y as w e ll a s a d va n ce d circu it te c h n iq u e s to p rovide w ide

HY51V17404

Abstract: HYM5V64414B
Contextual Info: HYM5V64414B K-Series Unbuffered 4Mx64 bit EDO DRAM MODULE based on 4Mx4 DRAM, 3.3V, 2K-Refresh GENERAL DESCRIPTION The HYM5V64414B K-Series is a 4Mx64-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY51V17404B in 24/26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy

Contextual Info: •HYUNDAI H Y 5 1 V 1 7 4 0 4 B ,H Y 5 1 V 1 6 4 0 4 B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

1MX16BIT

Abstract: 16MX1
Contextual Info: 'H Y U N D A I TABLE OF CONTENTS 1. TABLE OF CONTENTS In d e x . 1 2. PRODUCT QUICK REFERENCE

BEDO RAM

Abstract: hy5118160b HY512264 HY5117404 HY5118164B
Contextual Info: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

AUO-PL321.60

Abstract: HY51V18164B HY514264 HY514260
Contextual Info: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP

HY51V18164

Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
Contextual Info: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC

HY514260

Abstract: HY5118160 HY5116160 HY5117404 HY51V65400 HY511616
Contextual Info: •'HYUNDAI — • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUIC REFERENCE DRAM Part Numbering Ordering Information 3. DRAM DATA SHEETS 1M-bit DRAM Page HY531000A. 1M x1-bit, 5V, F P .