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    HY57V281620A Price and Stock

    SK Hynix Inc HY57V281620ATP

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    Bristol Electronics HY57V281620ATP 433
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    Quest Components HY57V281620ATP 346
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    SK Hynix Inc HY57V281620AT-K

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    Bristol Electronics HY57V281620AT-K 63 1
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    Quest Components HY57V281620AT-K 50
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    SK Hynix Inc HY57V281620AT-H

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    Quest Components HY57V281620AT-H 24
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    HY57V281620AT-H 16
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    SK Hynix Inc HY57V281620AT-HI

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    Bristol Electronics HY57V281620AT-HI 4
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    Quest Components HY57V281620AT-HI 3
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    HNX HY57V281620AT-H

    IC,SDRAM,4X2MX16,CMOS,TSOP,54PIN,PLASTIC
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    Quest Components HY57V281620AT-H 40
    • 1 $5.25
    • 10 $3.85
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    HY57V281620A Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY57V281620A Hynix Semiconductor 4 Banks x 2M x 16-Bits Synchronous DRAM Original PDF
    HY57V281620ALT-6 Hynix Semiconductor 128Mbit (4 banks x 2M x 16-Bits) synchronous DRAM, LVTTL, 166MHz Original PDF
    HY57V281620ALT-7 Hynix Semiconductor 128Mbit (4 banks x 2M x 16-Bits) synchronous DRAM, LVTTL, 143MHz Original PDF
    HY57V281620ALT-8 Hynix Semiconductor 128Mbit (4 banks x 2M x 16-Bits) synchronous DRAM, LVTTL, 125MHz Original PDF
    HY57V281620ALT-H Hynix Semiconductor 128Mbit (4 banks x 2M x 16-Bits) synchronous DRAM, LVTTL, 133MHz Original PDF
    HY57V281620ALT-HI Hynix Semiconductor 4 Banks x 2M x 16-Bits Synchronous DRAM Original PDF
    HY57V281620ALT-K Hynix Semiconductor 128Mbit (4 banks x 2M x 16-Bits) synchronous DRAM, LVTTL, 133MHz Original PDF
    HY57V281620ALT-KI Hynix Semiconductor 4 Banks x 2M x 16-Bits Synchronous DRAM Original PDF
    HY57V281620ALT-P Hynix Semiconductor 128Mbit (4 banks x 2M x 16-Bits) synchronous DRAM, LVTTL, 100MHz Original PDF
    HY57V281620ALT-PI Hynix Semiconductor 4 Banks x 2M x 16-Bits Synchronous DRAM Original PDF
    HY57V281620ALT-S Hynix Semiconductor 128Mbit (4 banks x 2M x 16-Bits) synchronous DRAM, LVTTL, 100MHz Original PDF
    HY57V281620ALT-SI Hynix Semiconductor 4 Banks x 2M x 16-Bits Synchronous DRAM Original PDF
    HY57V281620AT-6 Hynix Semiconductor 128Mbit (4 banks x 2M x 16-Bits) synchronous DRAM, LVTTL, 166MHz Original PDF
    HY57V281620AT-7 Hynix Semiconductor 128Mbit (4 banks x 2M x 16-Bits) synchronous DRAM, LVTTL, 143MHz Original PDF
    HY57V281620AT-8 Hynix Semiconductor 128Mbit (4 banks x 2M x 16-Bits) synchronous DRAM, LVTTL, 125MHz Original PDF
    HY57V281620AT-H Hynix Semiconductor 128Mbit (4 banks x 2M x 16-Bits) synchronous DRAM, LVTTL, 133MHz Original PDF
    HY57V281620AT-HI Hynix Semiconductor 4 Banks x 2M x 16-Bits Synchronous DRAM Original PDF
    HY57V281620AT-I Hynix Semiconductor 4 Banks x 2M x 16-Bits Synchronous DRAM Original PDF
    HY57V281620AT-K Hynix Semiconductor 128Mbit (4 banks x 2M x 16-Bits) synchronous DRAM, LVTTL, 133MHz Original PDF
    HY57V281620AT-KI Hynix Semiconductor 4 Banks x 2M x 16-Bits Synchronous DRAM Original PDF

    HY57V281620A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HY57V281620A

    Abstract: HY57V281620ALT-HI HY57V281620ALT-KI HY57V281620ALT-PI HY57V281620ALT-SI HY57V281620AT-HI HY57V281620AT-KI HY57V281620AT-PI HY57V281620AT-SI
    Text: HY57V281620A 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range . HY57V281620A is organized as 4banks of 2,097,152x16


    Original     		PDF HY57V281620A 16bits HY57V281620A 728bit 152x16 400mil 54pin HY57V281620ALT-HI HY57V281620ALT-KI HY57V281620ALT-PI HY57V281620ALT-SI HY57V281620AT-HI HY57V281620AT-KI HY57V281620AT-PI HY57V281620AT-SI

    Untitled

    Abstract: No abstract text available
    Text: HY57V281620A 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range . HY57V281620A is organized as 4banks of 2,097,152x16


    Original     		PDF HY57V281620A 16bits HY57V281620A 728bit 152x16 400mil 54pin

    4banks

    Abstract: No abstract text available
    Text: HY57V281620A 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V281620A is organized as 4banks of 2,097,152x16


    Original     		PDF HY57V281620A 16bits HY57V281620A 728bit 152x16 400mil 54pin 4banks

    HY57V281620A

    Abstract: No abstract text available
    Text: HY57V281620A Revision History Revision 1.1 Dec. 2000 • Added -7 Bining product. - In Ordering Information. - In Capacitacne - In DC Characteristics-ll - In AC Characteristics-l, ll • Eleminated -10 Bining product. • Changed DC Characteristics-ll. - tCK


    Original     		PDF HY57V281620A 120mA 100mA 240mA 200mA. 16bits HY57V281620A 728bit

    HY57V281620AT-P

    Abstract: HY57V281620ALT-S HY57V281620AT-6 HY57V281620A HY57V281620ALT-6 HY57V281620ALT-7 HY57V281620AT-7 HY57V281620AT-8 HY57V281620AT-H HY57V281620AT-K
    Text: HY57V281620A 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V281620A is organized as 4banks of 2,097,152x16


    Original     		PDF HY57V281620A 16bits HY57V281620A 728bit 152x16 400mil 54pin HY57V281620AT-P HY57V281620ALT-S HY57V281620AT-6 HY57V281620ALT-6 HY57V281620ALT-7 HY57V281620AT-7 HY57V281620AT-8 HY57V281620AT-H HY57V281620AT-K

    HY57V281620ALT-8

    Abstract: HY57V281620AT-6 HY57V281620AT-K HY57V281620AT-P HY57V281620AT-S HY57V281620A HY57V281620ALT-6 HY57V281620ALT-7 HY57V281620AT-7 HY57V281620AT-8
    Text: HY57V281620A Revision History Revision 1.1 Dec. 2000 • Added -7 Bining product. - In Ordering Information. - In Capacitacne - In DC Characteristics-ll - In AC Characteristics-l, ll • Eleminated -10 Bining product. • Changed DC Characteristics-ll. - tCK


    Original     		PDF HY57V281620A 120mA 100mA 240mA 200mA. 16bits HY57V281620A 728bit HY57Vbringing HY57V281620ALT-8 HY57V281620AT-6 HY57V281620AT-K HY57V281620AT-P HY57V281620AT-S HY57V281620ALT-6 HY57V281620ALT-7 HY57V281620AT-7 HY57V281620AT-8

    HY57V281620ALT-6

    Abstract: HY57V281620A HY57V281620ALT-K HY57V281620AT-6 HY57V281620AT-8 HY57V281620AT-H HY57V281620AT-K HY57V281620AT-P HY57V281620AT-S hy57v
    Text: HY57V281620A 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hyundai HY57V281620A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V281620A is organized as 4banks of 2,097,152x16


    Original     		PDF HY57V281620A 16bits HY57V281620A 728bit 152x16 400mil 54pin HY57V281620ALT-6 HY57V281620ALT-K HY57V281620AT-6 HY57V281620AT-8 HY57V281620AT-H HY57V281620AT-K HY57V281620AT-P HY57V281620AT-S hy57v

    Hynix Cross Reference

    Abstract: dram cross reference WINBOND hyundai hy57v161610d WINBOND cross reference 64Mb samsung SDRAM TC59SM716FT/AFT 256mb K4H560838B hy57v
    Text: DRAM Cross Reference DDR SDRAM Winbond P/N W946432AD W942504AH W942508AH W942516AH Density 64Mb 256Mb 256Mb 256Mb Org. 2Mx32 64Mx4 32Mx8 16Mx16 Samsung K4D62323HA K4H560438B K4H560838B K4H561638B Hynix Hyundai HY57V643220CT HY5DU56422T HY5DU56822T HY5DU561622T


    Original     		PDF W946432AD W942504AH W942508AH W942516AH 256Mb 2Mx32 64Mx4 32Mx8 Hynix Cross Reference dram cross reference WINBOND hyundai hy57v161610d WINBOND cross reference 64Mb samsung SDRAM TC59SM716FT/AFT 256mb K4H560838B hy57v

    HY57V281620ALT-7

    Abstract: HY57V281620ALT-6
    Text: HY57V281620A L T 8Mx16-bit, 4K Ref, 4Banks., 3.3V DESCRIPTION The Hynix HY57V281620A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V281620A is organized as 4banks of 2,097,152x16


    OCR Scan     		PDF HY57V281620A 8Mx16-bit, 728bit 152x16 400mil HY57V281620ALT-7 HY57V281620ALT-6

    Untitled

    Abstract: No abstract text available
    Text: H Y57V281620A L T-I 8Mx 16-bit, 4K Ref, 4Banks., 3.3 V DESCRIPTION T h e Hy n i x H Y 5 7 V 2 8 1 6 2 0 A i s a 1 34, 2 1 7 , 7 2 8bi I C M O S S y n c h r o n o u s D R A M , i d e a l l y s u i t e d f o r t he Mobile applicati ons which require l ow p o w e r c o n s u m p t i o n and e x t e n d e d t e m p e r a t u r e r a n g e . H Y 5 7 V 2 8 1 6 2 0 A is o r g a n i z e d as 4 b a n k s of 2 , 0 9 7 , 1 5 2 x 1 6


    OCR Scan     		PDF Y57V281620A 16-bit, HY57V281620A

    PC100

    Abstract: 16MX64 16MX8 8MX16
    Text: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE SDRAM Part Numbering 11 SDRAM Module Part Numbering 13 3. DATA SHEETS SDRAM 128M -bft SPRAM HY57V28420A L T 32Mx4-bit, 4K Réf., 4Banks, 3.3V 25 HY57V28820A(L)T 16Mx8-bit, 4K Réf., 4Banks, 3.3V


    OCR Scan     		PDF HY57V28420A HY57V28820A HY57V281620A HY57V28420HC HY57V28820HC HY57V281620HC HY57V28420HD HY57V28820HD PC100 16MX64 16MX8 8MX16

    PC100

    Abstract: PC133 54-PIN HYM71V653201
    Text: 2 . PRODUCT QUICK REFERENCE X XX XX X X XX X X - X - X X£ HYNIX MEMORY PRODUCT Q U IC K REFERENCE HY XX I : Industrial Temperature E: Extended Temperature SPEED s 200MHz 183MHz 55 6 7 PRODUCT GROUP 57 : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSTTY& REFRESH


    OCR Scan     		PDF 200MHz 183MHz 166MHz 143MHz PC133 125MHz PC100, 100MHz PC100 54-PIN HYM71V653201

    PC100

    Abstract: 54-PIN
    Text: 2 . PR O D U C T Q U IC K REFERENCE PRODUCT QUICK REFERENCE HY XX X XX XX X X XX X X PRO DUCT Q UICK REFERENCE New SDRAM PART NUMBERING XX I : Industrial Tem perature E: Extended Tem perature HY NIX M EM OR Y SPEED PRODUCT G ROUP 57 : SDRAM s PROCESS & PO W ER SUPPLY


    OCR Scan     		PDF 183MHz PC133 125MHz PC100, 100MHz M72V32656T8 HYM72V32636T8 HYM72V32756T8 PC100 54-PIN