Untitled
Abstract: No abstract text available
Text: HY57V28420A 4Banks x 8M x 4bits Synchronous DRAM DESCRIPTION The Hyundai HY57V28420A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28420A is organized as 4banks of
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HY57V28420A
HY57V28420A
728bit
608x4.
400mil
54pin
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Untitled
Abstract: No abstract text available
Text: HY57V28420A Revision History Revision 1.1 Dec. 2000 • • Eleminated -10 Bining product. Changed DC Characteristics-ll. - tCK to 15ns from min in Test condition - -K IDD1 to 120mA from 110mA - -K IDD4 CL2 to 120mA from 100mA. - -K IDD5 to 240mA from 220mA.
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HY57V28420A
120mA
110mA
100mA.
240mA
220mA.
100mA
HY57V28420A
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HY57V28420AT-H
Abstract: No abstract text available
Text: HY57V28420A 4Banks x 8M x 4bits Synchronous DRAM DESCRIPTION The Hynix HY57V28420A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28420A is organized as 4banks of 8,388,608x4.
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HY57V28420A
HY57V28420A
728bit
608x4.
400mil
54pin
HY57V28420AT-H
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HY57V28420AT-H
Abstract: 8MX4
Text: HY57V28420A 4Banks x 8M x 4bits Synchronous DRAM DESCRIPTION The Hynix HY57V28420A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28420A is organized as 4banks of 8,388,608x4.
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HY57V28420A
HY57V28420A
728bit
608x4.
400mil
54pin
HY57V28420AT-H
8MX4
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Untitled
Abstract: No abstract text available
Text: HY57V28420HC L T 4Banks x 8M x 4bits Synchronous DRAM DESCRIPTION The Hynix HY57V28420HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28420HC(L)T is organized as 4banks of
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HY57V28420HC
728bit
608x4.
400mil
54pin
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HY57V28420HCT-S
Abstract: hy57v28420hct-h
Text: HY57V28420HC L T 0.1 : Hynix Change 0.2 : Burst Mode Sigle Write Mode Correction Rev. 0.2/Aug. 01 1 HY57V28420HC(L)T 4Banks x 8M x 4bits Synchronous DRAM DESCRIPTION The Hynix HY57V28420HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory
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HY57V28420HC
728bit
608x4.
400mil
54pin
HY57V28420HCT-S
hy57v28420hct-h
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Untitled
Abstract: No abstract text available
Text: HY57V28420HD L T 4Banks x 8M x 4bits Synchronous DRAM Preliminary DESCRIPTION The Hynix HY57V28420HD(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28420HD(L)T is organized as 4banks of
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HY57V28420HD
728bit
608x4.
400mil
54pin
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HY57V28420HCT-S
Abstract: No abstract text available
Text: HY57V28420HC L T 4Banks x 8M x 4bits Synchronous DRAM DESCRIPTION The Hynix HY57V28420HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28420HC(L)T is organized as 4banks of
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HY57V28420HC
728bit
608x4.
400mil
54pin
HY57V28420HCT-S
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PC100
Abstract: 16MX64 16MX8 8MX16
Text: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE SDRAM Part Numbering 11 SDRAM Module Part Numbering 13 3. DATA SHEETS SDRAM 128M -bft SPRAM HY57V28420A L T 32Mx4-bit, 4K Réf., 4Banks, 3.3V 25 HY57V28820A(L)T 16Mx8-bit, 4K Réf., 4Banks, 3.3V
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HY57V28420A
HY57V28820A
HY57V281620A
HY57V28420HC
HY57V28820HC
HY57V281620HC
HY57V28420HD
HY57V28820HD
PC100
16MX64
16MX8
8MX16
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Untitled
Abstract: No abstract text available
Text: HY57V28420A L T 32Mx4-bit, 4K Ref, 4Banks„ 3.3V DESCRIPTION The Hynix HY57V28420A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applica tions which require large memory density and high bandwidth. HY57V28420A is organized as 4banks of 8,388,608x4.
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HY57V28420A
32Mx4-bit,
728bit
608x4.
400mil
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1gb pc133 SDRAM DIMM 144pin
Abstract: 54-PIN PC100 gm72v66841
Text: 2 . PRODUCT QUICK REFERENCE PRODUCT QUICK REFERENCE HY XX X XX XX X X X X X X - xx x .L HYNIX MEMORY : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSITY & REFRESH 64M 4K Refresh 64M 8K Refresh 128M 4K Refresh 256M 8K Refresh 64 65 28 56 12 512M 8K Refresh
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200MHz
183MHz
166MHz
143MHz
PC133
125MHz
PC100,
100MHz
1gb pc133 SDRAM DIMM 144pin
54-PIN
PC100
gm72v66841
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Untitled
Abstract: No abstract text available
Text: HY57V28420HD L T 32Mx4-bit, 4K Ref, 4Banks„ 3.3V DESCRIPTION The Hynix HY57V28420HD(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28420HD(L)T is organized as 4banks of
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HY57V28420HD
32Mx4-bit,
728bit
608x4.
400mil
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Untitled
Abstract: No abstract text available
Text: HY57V28420HC L T 32Mx4-bit, 4 K Ref, 4 B an ks„ 3.3V D E S C R IP T IO N The Hynix HY57V28420HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28420HC(L)T is organized as 4banks of
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HY57V28420HC
32Mx4-bit,
728bit
608x4,
400mil
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PC100
Abstract: PC133 54-PIN HYM71V653201
Text: 2 . PRODUCT QUICK REFERENCE X XX XX X X XX X X - X - X X£ HYNIX MEMORY PRODUCT Q U IC K REFERENCE HY XX I : Industrial Temperature E: Extended Temperature SPEED s 200MHz 183MHz 55 6 7 PRODUCT GROUP 57 : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSTTY& REFRESH
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200MHz
183MHz
166MHz
143MHz
PC133
125MHz
PC100,
100MHz
PC100
54-PIN
HYM71V653201
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