HY57V28420HC Search Results

Contextual Info: HY57V28420HC L T 4Banks x 8M x 4bits Synchronous DRAM DESCRIPTION The Hynix HY57V28420HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28420HC(L)T is organized as 4banks of

Contextual Info: HY57V28420HC L T 32Mx4-bit, 4 K Ref, 4 B an ks„ 3.3V D E S C R IP T IO N The Hynix HY57V28420HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28420HC(L)T is organized as 4banks of

HY57V28420HCT-S

Abstract: hy57v28420hct-h
Contextual Info: HY57V28420HC L T 0.1 : Hynix Change 0.2 : Burst Mode Sigle Write Mode Correction Rev. 0.2/Aug. 01 1 HY57V28420HC(L)T 4Banks x 8M x 4bits Synchronous DRAM DESCRIPTION The Hynix HY57V28420HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory

HY57V28420HCT-S

Contextual Info: HY57V28420HC L T 4Banks x 8M x 4bits Synchronous DRAM DESCRIPTION The Hynix HY57V28420HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28420HC(L)T is organized as 4banks of

Contextual Info: HY57V28420HC 4Banks x 8M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V28420HC is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28420HC is organized as 4banks of

PC100

Abstract: 16MX64 16MX8 8MX16
Contextual Info: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE SDRAM Part Numbering 11 SDRAM Module Part Numbering 13 3. DATA SHEETS SDRAM 128M -bft SPRAM HY57V28420A L T 32Mx4-bit, 4K Réf., 4Banks, 3.3V 25 HY57V28820A(L)T 16Mx8-bit, 4K Réf., 4Banks, 3.3V

1gb pc133 SDRAM DIMM 144pin

Abstract: 54-PIN PC100 gm72v66841
Contextual Info: 2 . PRODUCT QUICK REFERENCE PRODUCT QUICK REFERENCE HY XX X XX XX X X X X X X - xx x .L HYNIX MEMORY : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSITY & REFRESH 64M 4K Refresh 64M 8K Refresh 128M 4K Refresh 256M 8K Refresh 64 65 28 56 12 512M 8K Refresh

Contextual Info: HY57V28420HD L T 32Mx4-bit, 4K Ref, 4Banks„ 3.3V DESCRIPTION The Hynix HY57V28420HD(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28420HD(L)T is organized as 4banks of

Contextual Info: HY57V28420HD L T 4Banks x 8M x 4bits Synchronous DRAM Preliminary DESCRIPTION The Hynix HY57V28420HD(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28420HD(L)T is organized as 4banks of

PC100

Abstract: PC133 54-PIN HYM71V653201
Contextual Info: 2 . PRODUCT QUICK REFERENCE X XX XX X X XX X X - X - X X£ HYNIX MEMORY PRODUCT Q U IC K REFERENCE HY XX I : Industrial Temperature E: Extended Temperature SPEED s 200MHz 183MHz 55 6 7 PRODUCT GROUP 57 : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSTTY& REFRESH