I200N Search Results

Contextual Info: S5104bô 001L7E1 1Ö4 • u m TECHNOLOGY [ M T O L B E LIM I Final E le ctrica l S p ecificatio ns LTC1553 5-Bit Programmable Synchronous Switching Regulator Controller for Pentium Pro Processor February 1997 F€ATU߀S DCSCftlPTIOn ■ 5-Bit Digitally Programmable 1.8V to 3.5V Fixed

C 5388

Contextual Info: Ü G B T ^ E ^ zl- ^ y f - 's v w r N '> i J - X Jj 1 I200N-120 n-> p - X j 1200V / 200A/ 1 IB * ! : Features • » *< High Speed Switching v ? > *? • /± SnH i Voltage Drive • te - T Low Inductance Module Structure : Applications -f > '< — $ o

Contextual Info: KMM366S823BTL PC66 SDRAM MODULE KMM366S823BTL SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx8,4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S823BTL is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

Viper L2A

Abstract: opti 82c596 82C558N 82C465MV opti 82C556
Contextual Info: 82C556/82C557/82C558N Viper Notebook Chipset Data Book Revision: 1.0 912-3000-032 May 25,199 5 Copyright Copyright 1995, OPTi Inc. All rights reserved. No part of this publication may be reproduced, transmitted, transcribed, stored in a retrieval system, or translated into any language or computer language, in any form or by any means, electronic, mechani­

ASUS

Contextual Info: un Galileo Technology- System Controller with GT-64010A Preliminary PCI Interface for R4XXX/ Revision 1.1 R5000 Family CPUs December 1996 N O T E : A lw ays contact G alileo Technology for possible updates before starting a design. FEATURES Integrated system controller with PCI bus interface for

BLH Pressure Transducer wiring

Abstract: BU 102S Model 2B31K AC1211 PT139 2B31J BLH DHF 2B31 BLH ELECTRONICS CALIBRATION BLH Pressure Transducer specifications D-HF
Contextual Info: □ ANALOG DEVICES High Performance, Economy Strain Gage/RTD Conditioners FEATURES Low Cost Complete Signal Conditioning Function Low Drift: 0.5/nV/°C max " L " ; Low Noise: 1juV p-p max Wide Gain Range: 1 to 2 0 0 0 V /V Low Nonlinearity: 0.0025% max ("L ")

BD291

Abstract: 2SC3883 SD1534-8 2S-C3883 bd292 trw rf transistors 2SC2198 Sanken NPN SD1428 2N5034 2N5035
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO PD Max r hFE fT 'CBO Max Max Mln (Hz) (A) (8) on ON) 100 100 100 100 100 100 50 50 50 50 50 100 50 218 218 30 30 75 75 75 75 75 75 75 75 80 60 60 70 80 22 22 22 22 22

i300n

Contextual Info: 600 volts class IGBT m odules N series • • • • • L o w s a t u r a t io n v o lta g e High s pe ed s w i t c h in g L o w s w i t c h in g noise High s h o r t- c i r c u it w i t h s t a n d c a p a b ility V o lta g e d riv e m e t h o d p e r m it s lo w p o w e r d r iv e

4116 DRAM 16Kx1

Abstract: 82C206 82C558
Contextual Info: 82C556/82C557/82C558 Figure 2-3 82C557 SYSC Block Diagram I R ES ET PW RG D CLK ECLK LCLK HA[31:3] BE[7:0]# M /IO # D/C# W /R # /IN V /D IR TYO AD S # BRDY# NA# KEN #/LM EM # EADS#/(W B/W T#) HITM # CACHE# SM IACT# EC D OE# O C D O E# ECAWE#/CACSOO# OCAW E#/CACS1 O#

Contextual Info: TOSHIBA TC55V8512J/FT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC55V8512J/FT is a 4,194,304-bit high-speed static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it

DQ380

Abstract: U4 Package ADQ36
Contextual Info: STI644006UD2-1OVG 168-PIN DIMMS 4M X 64 Bits SDRAM Unbuffered DIM M FEATURES GENERAL DESCRIPTION • Maximum frequency=100MHz tcc=10ns • Burst Mode Operation • Auto and self refresh capability (4096 cycles/64ms refresh) • • LVTTL compatible inputs and outputs

Contextual Info: PCI 9050 TE August 31, 1996 VERSION 1.0 PCI Bus Target Interface Chip for Low Cost Adapters Featu res_ General Description_ • PCI Specification 2.1 Com pliant Target Interface Chip supporting low cost slave adapters. A llow s simple

Contextual Info: Preliminary CMOS SDRAM KM48S8030C 2M x 8Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM48S8030C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG'S high performance CMOS technol­

a9333

Contextual Info: Preliminary KM416S8030 CMOS SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation The KM416S8030 is 134,217,728 bits synchronous high data

Contextual Info: STI642006UD1 -1OVG 168-PIN DIMMS 2M X 64 Bits SDRAM Unbuffered DIMM FEATURES GENERAL DESCRIPTION • • • The Simple Technology STI642006UD1-10VG is a 2M x 64 bits Synchronous Dynamic RAM SDRAM Dual In-line Memory Module (DIMM). TheSimpleTechnologySTI642C06UD1-10VG

Contextual Info: Ü G B T ^^zl-JU rN'>U-X j • ¡ s i i x - r " j * > ? m r N '> ij - X I200N-120 j 1 2 0 0 V /2 0 0 A / 2 f | M : Features " j T ' s V High Speed Switching •H/±S£ !j Voltage Drive Low Inductance Module Structure : A pplications >/< —^ Inverterfor Motor Drive

2mb1200n-060

Abstract: 2MB1200N 2MBI200N-060 sl 0380 2mb1200 sl 0380 r
Contextual Info: I200N-060 j J 6 0 0 V /2 0 0 A / 2 flSifl •4rMt: ■ Features • » a * * * * High Speed Switching %W±MMh Voltage Drive Low Inductance Module Structure : Applications • i •AC,DC1J- — > ' < —9 Inverter for Motor Drive AC and DC Servo Drive Amplifier

48v to 230v inverters circuit diagram

Abstract: i300n bi50l120 2SC 2625 transistor 7MBR10NF120 2RI100G-160X2PX3 EVK71-050 2SC2625 application note 24v dc to 230v ac inverter fuji transistor catalog
Contextual Info: Applications hiiiftH— j\\ Note: This catalog describes the m ain usages o f pow er transistors FUJI supplies these versatile elem ents fo r a w ide range of electronic equipm ent. Please contact FUJI fo r your particular application. 63 ; r - — I • Electronic ignitor use

1 GBT 400 A 1200V

Abstract: 1mb1200n-120 5l 0380 1MBI200N-120 1mbi200
Contextual Info: ±IG BT^>>ZL-;U rN'>i|-XjJ 1 I200N-120 i& Ä * • f 4 t 'V * > 'f W N >> y - X J mm 1 2 0 0 V /2 0 0 A / 1 : Features >*? •^/E G E R i High Speed Switching Voltage Drive Low Inductance Module Structure : Applications ;✓/< — ^ • A C ,D C 1 f —#

Contextual Info: KMM366S824BTL PC66 SDRAM MODULE KMM366S824BTL SDRAM DIMM 8Mx64 SDRAM DIMM based on 4Mx16,4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S824BTL is a 8 M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

Transistor BFT 10C

Abstract: HI1-516
Contextual Info: f f l H A H R H i s I - 5 1 6 / 8 8 3 16 C hannel/D ifferential 8 Channel CMOS High Speed Analog M ultiplexer June 1 98 8 Features D escrip tio n • This C ircu it is P ro c e ss e d In A c c o rd a n c e to M il-S td 8 8 3 a n d Is Fully C o n fo rm a n t U n d e r th e P rovision s o f