I510 Search Results

Contextual Info: $GYDQFHG 3RZHU 026 7 IRLW/I510A FEATURES BVDSS = 100 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.44Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 5.6 A ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature

IRFWI510A

Contextual Info: Advanced IRFW/I510A P o w e r MOSFET FEATURES = 100 V • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea R ü S o n - ■

Contextual Info: ERFW/I510A Advanced Power MOSFET FEATURES B • ■ ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175“C Operating Temperature Lower Leakage Current : 10 uA Max. @ VDS= 100V

EZ-34

Abstract: IRFM120A U2N60
Contextual Info: Device List D2 / I 2 IRFW/IZ14A IRFW/IZ24A IRFW/EZ34A IRFW/IZ44A IRFW/I510A ERFW/I520A IRFW/I530A FRFW/I540A IRFWfl550A IRFW/I610A IRFW/I620A IRFW/I630A IRFW/I640A IRFW/I614A IRFW/I624A IRFW/I634A IRFW/I644A IRFW/I710A IRFW/I720A IRFW/I730A IRFW/I740A SSW/I1N50A

iCreate Technologies Corp. Flash

Abstract: iCreate Technologies CHIPS TECHNOLOGIES IDE i510x FD13 HA10 HD10 HD11 HD15 cf 44 pin to ide 1.8
Contextual Info: Create i510x CompactFlash Memory Card Controller Datasheet Version 1.3 iCreate Technologies Corporation Release date: 12/9/2004 2004 iCreate Technologies Corporation iCreate Technologies Corporation reserves the right to change the specification in any manner without notice.

SI511

Abstract: SI510
Contextual Info: S i510/5 11 Ỉ ᬗ࢜ࢩ ࣞ ࣮ ࢱ X O 1 0 0 k H Z 㹼 2 5 0 MH Z ᶵ⬟        100 kHz 㹼 250 MHz ࡢ࡝ࡢ࿘Ἴᩘ  ࡛ࡶࢧ࣏࣮ࢺ పࢪࢵࢱ࣮ືస  2 㹼 4 㐌㛫ࡢ࣮ࣜࢻࢱ࢖࣒ 10 ᖺ࢚࣮ࢪࣥࢢࢆྵࡴ඲యᏳᐃᗘ 

Contextual Info: Halogen Free PRODUCTS Crystal Unit SMD Typical Applications: PCMCIA Cards W-LAN Bluetooth Portable Multimedia Devices I50 (Seam Welding Series) Part Number: I50 (ppm) - Freq - CL Example: I510-24.000-18 • Specification I50 Example Part No. I50 (ppm) - Freq - CL

Contextual Info: IRLW/I510A FEATURES - 100 V ^ D S o n = 0.44 & Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 17f?C Operating Temperature ■ Lower Leakage Current : 10 |M (Max.) @ VDS=100V

Contextual Info: $GYDQFHG 3RZHU 026 7 IRLW/I510A FEATURES BVDSS = 100 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.44Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 5.6 A ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature

451 cross-reference

Contextual Info: IRFW/I510A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.4 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.6 A Improved Gate Charge Extended Safe Operating Area D2-PAK Ο 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V

Contextual Info: $GYDQFHG 3RZHU 026 7 IRLW/I510A FEATURES BVDSS = 100 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.44Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 5.6 A ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature

Contextual Info: IR L W /I510A A dvanced Power MOSFET FEATURES B V DSS — 1 0 0 V ♦ Avalanche Rugged Technology II D ♦ Lower Input Capacitance cn CD ^D S o n = ♦ Rugged Gate Oxide Technology 0 .4 4 a A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature

Contextual Info: IRLW/I510A Advanced Power MOSFET FEATURES - 100 V ^ D S o n = 0 .4 4 Q B^DSS a II ♦ Lower Input Capacitance O) ♦ Rugged Gate Oxide Technology cn ♦ Avalanche Rugged Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ 175°C Operating Temperature

Contextual Info: $GYDQFHG 3RZHU 026 7 IRLW/I510A FEATURES BVDSS = 100 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.44Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 5.6 A ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature

Contextual Info: IRFW/I510A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.4 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.6 A Improved Gate Charge Extended Safe Operating Area D2-PAK Ο 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V

xgi z9s

Abstract: "Z9s" ICH9R LGA771 W83793G PCIE footprint power supply ATX12v pci-e sata bridge controller DDR2 SODIMM SERVER DDR2 SODIMM on server
Contextual Info: www.tyan.com Intel Cranberry Lake SER/WS Platform Tempest i5100X S5375AG2NR Dual Xeon Server/Workstation Dual LGA771 sockets Support 5100/5200/5400 series CPUs Intel 5100 + ICH9R Support 1066/1333 MHz FSB 8 DDRII 240-pin DIMM slot Supporting up to 32G DDR2 533/667 memory

Contextual Info: IRLW/I510A Advanced Power MOSFET FEATURES BVdss = 100 V • ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 17!?C Operating Temperature Lower Leakage Current : 10 HA Max. @ VDS = 100V

RJ45 LAN jack

Abstract: adsl router
Contextual Info: i510 i510 Full Rate ADSL Router Extended Features Features The Infinilink i510 is a robust, full rate ADSL Router that supports a wide range of environments and configurations. The i510 contains additional • Upgraded SDRAM and Flash Provides enhanced routing capabilities

10Q30

Contextual Info: SIUCQN NPN EPITAXIAL TYPE- Rfl J 51 Q, RN 1 511 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. Including Two Devices In SMV Super Mini Type with 5 leads EE i With b u ilt-in Bias Resistors e 2 Simplify Circuit Design

ISD5008

Abstract: ISD5100 ISD5108 ISD5104 ISD5116 "Phone book"
Contextual Info: PRELIMINARY ISD5100 – SERIES SINGLE-CHIP VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY -1- Publication Release Date: March, 2003 Revision 0.1 ISD5100 – SERIES 1. GENERAL DESCRIPTION The ISD5100-Series ChipCorder products provide high quality, fully integrated, single-chip

I510

Contextual Info: Extract from the online catalog VIP-2/SC/PDM-2/16 Order No.: 2315256 VARIOFACE module, with two equipotential busbars P1, P2 for potential distribution, for mounting on NS 35/7.5 or NS 32. Module

Contextual Info: TLV320AIC3254 Ultra Low Power Stereo Audio Codec With Embedded miniDSP www.ti.com SLAS549A – SEPTEMBER 2008 – REVISED OCTOBER 2008 1 Introduction 1.1 Features 1.2 • • • • • • • • • • • • • • • • • • • • • • •

24AA52

Abstract: 24LCS52 I510 MS-001 Microchip marking codes S52
Contextual Info: 24AA52/24LCS52 2K 2.2V I2C Serial EEPROM with Software Write-Protect Features: Description: • Single supply with operation down to 1.8V • Low-power CMOS technology: - 1 mA active current, typical - 1 A standby current, typical I-temp • Organized as 1 block of 256 bytes (256 x 8)

CAPACITOR 60252-1

Abstract: E106388
Contextual Info: Film capacitors – AC capacitors Motor run capacitors 420 V; class B; 70 °C / 450 V; class C; 70 °C Series/Type: B32330/B32332 – Super MotorCap Ordering code: Date: Version: July 2007 2.0 Content of inside pages of data sheet. Data will be automatically entered into headers and footers.