IC 1A Search Results

MM1923D

Abstract: mm192 8 pin ic 3773 MM1925A MM192x MM1923B MM1923C MM1921c mm1923 MM1924A
Contextual Info: MITSUMI Regulator IC with the Soft-Start MM192x Series Regulator IC with the Soft-Start Monolithic IC MM192x Series Outline This IC is 1A regulator IC with soft-start. When Cs pin is connected with a capacitor, the output voltage is started up slowly. This IC can reduce a rush current by the soft-start.

MM1923D

Abstract: mm1925a MM1924K
Contextual Info: MITSUMI Regulator IC with the Soft-Start MM192x Series Regulator IC with the Soft-Start Monolithic IC MM192x Series Outline This IC is 1A regulator IC with soft-start. When Cs pin is connected with a capacitor, the output voltage is started up slowly. This IC can reduce a rush current by the soft-start.

AI-BP210N-14

Abstract: IC-F15 BP-232 icom AI-166 BP227 600MAH icom ic-f11 IC-F40GS IC-F25 7.2v
Contextual Info: BATTERIES ICOM DESCRIPTION PART NO. BP8, CM8, IC-2GAT , IC-4GAT, IC-12GAT, IC- 32AT, A20, A21 7.2v 1.1Ah Ni-Cd* AI-BP8 BP-142, IC-F30, IC-F40 CM-140, CM-142 7.2v 2.15Ah NiMH* AI-BP142N BP-157, BP-160, CM-140, CM-142, IC-F10, IC-F20, IC-F30, IC-2GA, IC-GXA, IC-2GXAT,

ZTX705

Abstract: ZTX704 DSA003774
Contextual Info: ZTX704 ZTX705 ELECTRICAL CHARACTERISTICS at Tamb = 25°C . PARAMETER SYMBOL ZTX704 MIN. ZTX705 MAX. MIN. 3K 3K 3K 2K UNIT CONDITIONS. MAX. IC=-10mA, VCE=-5V* IC=-100mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V* Static Forward Current Transfer Ratio hFE Transition

ztx705

Contextual Info: ZTX704 Not Recommended for New Design Please Use ZTX705 ZTX704 ZTX705 ELECTRICAL CHARACTERISTICS at Tamb = 25°C . PARAMETER SYMBOL ZTX704 MIN. 3K 3K 3K 2K ZTX705 MAX. MIN. UNIT CONDITIONS. MAX. IC=-10mA, VCE=-5V* IC=-100mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V*

Contextual Info: MIC2505/2506 Single 2A / Dual 1A / High-Side Switches General Description Features The M IC 2505, M IC 2505-1, M IC 2505-2, and M IC 2506 are single and dual integrated high-side pow er sw itches that co nsist of T TL com patible co ntrol/enable inputs, a charge

SSD103

Contextual Info: Surface-mount Power Transistor SSD103 Test Conditions ICBO IEBO VCEO hFE VCE sat VFEC Es/b VCB = 60V, I E = 0A VEB = 6V, IC = 0A IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA I FEC = 6A L = 10mH min 60 400 65 800 0.11 1.25 max 10 10 70 1500 0.15 1.5 80

2SB1658

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1658 DESCRIPTION •High Collector Current -IC= -5A ·High DC Current Gain: hFE= 150~600@IC= -1A ·Low-Collector Saturation Voltage: VCE sat = -0.15V(Max.)@IC= -1A APPLICATIONS

TPT5609

Abstract: SS8550 sot-23 Y2 sot-23 npn marking code cr SS8050 sot-89 Y1 6B sot 363 2N3904 SOT-23 MARKING CODE S9018 j6 sot-23 Marking 2TY SOT 363 marking CODE 2H MJE13003 2A
Contextual Info: MCC TM Micro Commercial Components SMALL SIGNAL &POWER TRANSISTORS VCEO Part No hFE @ VCE & IC IC Polarity VCE sat & VBE(sat) @ IC & IB fT @ VCE & IC VCE IC VCE(sat) VBE(sat) IC IB fT Min. fT Max. VCE IC hFE hFE Max. (V) (mA) Max.(V) Max.(V) (mA) (mA) (MHz)

Contextual Info: 2SC3678 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor µA V IEBO VEB=7V 100max µA V 7 V V(BR)CEO IC=10mA 800min IC 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 80(Tc=25°C) W VBE(sat)

2SD2583

Abstract: Audio Output Transistor Amplifier transistor Ic 1A datasheet NPN
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2583 DESCRIPTION •High Collector Current-IC= 5A ·Low Saturation Voltage : VCE sat = 0.15V(Max)@ IC=1A, IB= 50mA ·High DC Current Gain: hFE= 150~600@ IC= 1A APPLICATIONS

2SD2558

Abstract: 2sd25
Contextual Info: Equivalent circuit 2SD2558 Silicon NPN Triple Diffused Planar Transistor ICBO VCB=200V 100max µA VCEO 200 V IEBO VEB=6V 5max mA VEBO 6 V V BR CEO IC 5 A hFE IC=10mA 200min VCE=5V, IC=1A 1500 to 6500 Unit VCE(sat) IC=1A, IB=5mA 1.5max V W fT VCE=10V, IE=–0.5A

2SD2016

Abstract: FM20
Contextual Info: 2SD2016 Silicon NPN Triple Diffused Planar Transistor VCEO 200 V IEBO VEBO 6 V V BR CEO IC 3 A hFE Symbol Conditions VCB=200V 10max µA 10max mA VEB=6V V 200min IC=10mA 1000 to 15000 VCE=4V, IC=1A 0.5 A VCE(sat) IC=1A, IB=1.5mA 1.5max PC 25(Tc=25°C) W VBE(sat)

2SD2558

Contextual Info: Equivalent circuit 2SD2558 Silicon NPN Triple Diffused Planar Transistor ICBO VCB=200V 100max µA VCEO 200 V IEBO VEB=6V 5max mA VEBO 6 V V BR CEO IC 5 A hFE IC=10mA 200min VCE=5V, IC=1A 1500 to 6500 Unit VCE(sat) IC=1A, IB=5mA 1.5max V W fT VCE=10V, IE=–0.5A

2SD2016

Abstract: FM20
Contextual Info: 2SD2016 Silicon NPN Triple Diffused Planar Transistor VCEO 200 V IEBO VEBO 6 V V BR CEO IC 3 A hFE Symbol Conditions VCB=200V 10max µA 10max mA VEB=6V V 200min IC=10mA 1000 to 15000 VCE=4V, IC=1A 0.5 A VCE(sat) IC=1A, IB=1.5mA 1.5max PC 25(Tc=25°C) W VBE(sat)

Contextual Info: IC SMD Type Product specification 2SD1898 Features High VCEO, VCEO=80V . High IC, IC=1A DC . Good hFE linearity . Low VCE (sat) . Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO

2SD2557

Abstract: TEA1
Contextual Info: Equivalent circuit 2SD2557 Silicon NPN Triple Diffused Planar Transistor Unit VCB=200V 100max µA VCEO 200 V IEBO VEB=6V 5max mA VEBO 6 V V BR CEO IC 5 A hFE IC=10mA 200min VCE=5V, IC=1A 1500 to 6500 V a 4.8±0.2 2.0±0.1 ø3.2±0.1 b IB 2 A VCE(sat) IC=1A, IB=5mA

2SC3678

Contextual Info: 2SC3678 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor µA V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 80(Tc=25°C) W VBE(sat) IC=1A, IB=0.2A

2SD2557

Contextual Info: Equivalent circuit 2SD2557 Silicon NPN Triple Diffused Planar Transistor Unit VCB=200V 100max µA VCEO 200 V IEBO VEB=6V 5max mA VEBO 6 V V BR CEO IC 5 A hFE IC=10mA 200min VCE=5V, IC=1A 1500 to 6500 V a 4.8±0.2 2.0±0.1 ø3.2±0.1 b IB 2 A VCE(sat) IC=1A, IB=5mA

LN 741

Abstract: 741 application current source 741C 741 to99 ICL301A-LNPA ICL741CLN ICL301A-LNTY ICL101ALN ICL108LN ICL108
Contextual Info: IC L741LN , IC L741C LN , IC L101A LN IC L301A L N , IC L108LN , IC L308LN Low Noise Operational A m plifiers FEATURES GENERAL DESCRIPTION • Guaranteed Noise Specifications These low noise amplifiers are suitable for all applications where low level signals are encountered. The three impor­

Contextual Info: MITSUMI Li-ion Battery Charge Control IC MM3658AR Li-ion Battery Charge Control IC Monolithic IC MM3658AR Outline This IC is a linear charge control IC for 1-cell lithium iron phosphate LiFePO4 battery. The chip temperature detection function can limit the temperature rise in the IC during high power charging

MMS8050-L

Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
Contextual Info: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.

ZTX601

Abstract: ZTX600 DSA003770
Contextual Info: ZTX600 ZTX601 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Static Forward Current Transfer Ratio hFE ZTX600 ZTX601 MAX. MIN. TYP. MAX. 1K 2K 1K 1K 100K 2K 1K 100K IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V*

SILICON PNP POWER TRANSISTOR

Abstract: y135
Contextual Info: KSB798 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-89 • Collector Current: IC = -1A • Collector Dissipation: PC = 2W ABSOLUTE MAXIMUM RATING TA=25°°C Characteristic Symbol VCBO VCEO VEBO IC (DC) IC (Pulse) PC TJ T STG Collector-Base Voltage