IRF1010 MOSFET Search Results

irf1010

Abstract: irf1010 applications irf1010 MOSFET L377
Contextual Info: 4Ô55452 0 0 1 4 7 ^ 4 AST International k Rectifier IINR PD-9.814 IRF1010 HEXFET® Power MOSFET INTERNATIONAL R ECTIFIER Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching

Contextual Info: IRF1010 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)55 V(BR)GSS (V) I(D) Max. (A)75# I(DM) Max. (A) Pulsed I(D)53 @Temp (øC)100# IDM Max (@25øC Amb)300# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)-55õ

IRF1010 E DATASHEET

Abstract: irf1010 irf1010 applications irfz44e
Contextual Info: PD - 9.1671A IRFZ44E HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 60V RDS on = 0.023Ω ID = 48A Description Fifth Generation HEXFETs from International Rectifier

IRF9540N

Abstract: BU 11A
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1437 IRF9540N PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω

IRF4905

Abstract: IRF4905 P-channel power irf1010 applications IRF1010 E IRF1010
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1280A IRF4905 PRELIMINARY HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated

IRF5210

Abstract: irf1010 applications IRF1010
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1434 IRF5210 PRELIMINARY HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated

1rf1010

Abstract: J35A IRF1010S IRF1010 irf1010 MOSFET 1RF10
Contextual Info: PD-9.814 International K R e ctifie r IR F 1 Ö 10 HEXFET® Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling

irf 44 n

Abstract: IRF Power MOSFET code marking "thermal via" PCB D2PAK IRF MOSFET driver 9936 B TO-220AB transistor package IRF1010 TO-262 MOSFET 2F 1 marking 9936
Contextual Info: PD - 93936B IRF3706 IRF3706S IRF3706L SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power HEXFET Power MOSFET VDSS

IRfl23

Abstract: IRF1010 IRL2310
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1275 IRL2310 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V GS= 4.5V & 10V

84a DIODE

Abstract: IRF9530* p-channel power MOSFET irf9530N irf1010 applications international rectifier p0
Contextual Info: I PD - 9.1482B International XQR Rectifier IRF9530N PRELIMINARY HEXFET* Power MOSFET • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching VDSS = -100V ^ D S o n • P-Channel

Contextual Info: P D - 9 .1 6 9 7 A International I9R Rectifier IRL3402 PREUMINAR HEXFET Power MOSFET • • • • Advanced Process Technology Optimized for 4.5V -7.0V Gate Drive Ideal for CPU Core DC-DC Converter Fast Switching V dss - 20V ^DS on = 0.01 Q Id = Description

irf1010 applications

Abstract: IRF1010 IRFZ34N for irfz34n IRF1010N IRFZ34 replacement guide irfz34 mosfets *rfz34n
Contextual Info: International T \ ¥7 T t t ic 1 H R e d i f i e r U E M l j l l 1 1 F !^ OT« INTERNA TIO NAL R E C T IF IE R C O R P. A PPLIC A TIO N S ENG. 233 KANSAS ST., EL SEGUNDO, CA 90245 TEL 310 322-3331 FAX (310)322-3332 IR ’S NEW FIFTH GENERATION PO W ER MOSFETS:

Contextual Info: PD 9.1623 International IGR Rectifier IRF3315 PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDss = 150 V ^D S c n = Description 0.082Q

irf1010

Abstract: IRfl23 IRL2310
Contextual Info: PD - 9.1275 IRL2310 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V GS= 4.5V & 10V 175°C Operating Temperature VDSS = 100V

IRL3705N

Contextual Info: PD - 9.1370B International IO R Rectifier IRL3705N PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description

Contextual Info: P D -9.1341 International Hk ]Rectifier IRF540N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 100V ^DS on = 0.052Q Id = Description

ML555

Abstract: c871 marking code 7Gs h51 diode IQR 2400 IRF1010 IRF2525 JISR9246 SS452 002B3
Contextual Info: P D 9.1641 International Iö R Rectifier IRF2525 PRELIMINARY HEXFET2*Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 150°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = R o S o n = Description Id =

mosfet IRFZ34N

Abstract: IRFZ34N IRFZ34N MOSFET irfz34n equivalent for irfz34n lt 200 diode driver IRF1010 INTERNATIONAL RECTIFIER B469 irfz34n mosfets
Contextual Info: PD - _ IRFZ34N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.040 Ω ID = 26A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing

data IRLZ44N

Abstract: IRLZ44N IQR 2400 IRF1010 ISR9246
Contextual Info: PD - 9.1346B International IOR Rectifier IR LZ 44N HEXFET Power MOSFET • • • • • • Logic-Level G ate Drive A dvanced Process Technology Dynam ic dv/dt Rating 175 °C Operating Tem perature Fast Switching Fully Avalanche Rated V dss = 55 V R ü S o n = 0 . 0 2 2 Q .

IRF1010

Abstract: IRL630
Contextual Info: PD -9.1255 IRL630 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS ON Specified at V GS = 4V & 5V 150°C Operating Temperature Fast Switching Ease of paralleling VDSS = 200V RDS(on) = 0.40 Ω ID = 9.0A Description

Contextual Info: PD - 9.1348A International IOR Rectifier IRL530N PRELIMINARY HEXFET Power MOSFET • • • • • • Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss f^DS on

IRF9Z34N

Contextual Info: International I R Rectifier • • • • • • PD - 9.1485A IRF9Z34N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynam ic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated VDSS = -55V 0.10Q |D = -17A

Contextual Info: PD - 9.1357A International IOR Rectifier IRLZ24N PRELIMINARY HEXFET Power MOSFET • • • • • • Logic-Level G ate Drive A dvanced Process Technology Dynam ic dv/dt Rating 175°C O perating Tem perature Fast Switching Fully A valanche Rated V dss = 5 5 V

Contextual Info: PD -9.1484A International IO R Rectifier IRF9Z24N PRELIMINARY HEXFET^ Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Voss = -55V ^ D S o n =