IRF130 MOSFET Search Results

IRF130

Abstract: JANTX2N6756 JANTXV2N6756
Contextual Info: PD - 90333F IRF130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6756  HEXFET TRANSISTORS JANTXV2N6756 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 100V, N-CHANNEL Product Summary Part Number IRF130 BVDSS 100V RDS(on) 0.18Ω ID 14A The HEXFETtechnology is the key to International

irf130

Contextual Info: PD - 90333F IRF130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6756  HEXFET TRANSISTORS JANTXV2N6756 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 100V, N-CHANNEL Product Summary Part Number IRF130 BVDSS 100V RDS(on) 0.18Ω ID 14A The HEXFETtechnology is the key to International

irf530

Abstract: IRF130 tr irf530 20n10 20N08 MTP20N10 MTP20N08 IRF131 IRF132 IRF133
Contextual Info: _ _ _ _ _ F A jR C H i^ IRF130-133/IRF530-533 T - ! ? -" M TP20N08/20N10 / 39/ N-Channel Power MOSFETs, 20 A, 60-100 V A Schlumberger Company Power And Discrete Division_ _ _ Description These devices are n-channei, enhancement mode, power

IRF130

Contextual Info: IRF130 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) VDSS ID(cont) RDS(on) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655)

Contextual Info: IRF130 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) VDSS ID(cont) RDS(on) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655)

TA17411

Abstract: IRF130 TB334
Contextual Info: IRF130 Data Sheet March 1999 14A, 100V, 0.160 Ohm, N-Channel Power MOSFET 1566.4 Features • 14A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

power 22D

Abstract: irf64d IRF740 IRFP240 IRFP450 bridge IRF350 IRF120 IRF122 IRF123 IRF130
Contextual Info: FRED ERICK COMPONENTS MIE 3> • 37n4ñS Q0D01b3 5 M FCI A CORTON COM PANY C POWER MOSFETs P ART-N O IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF232 IRF233

Contextual Info: iH A R R is SEMIC0NDUCT0R IRF130, IRF131, IRF132, IRF133 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 12A and 14A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate

IRF130

Abstract: N Channel Mosfet 12W SHD217302A SHD217302
Contextual Info: SENSITRON SEMICONDUCTOR SHD217302A TECHNICAL DATA DATA SHEET 317, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.16 Ohm, 14A MOSFET œ Fast Switching œ Low RDS on œ Equivalent to IRF130 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.

Contextual Info: NATL This N-Channel Power MOSFETs Continued 2N6755 IRF130 IRF131 IRF132 By IRF133 Its IRF530 (71 IRF532 2N6757 2N6758 IRF230 IRF231 TC = 100-C (A) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-220 (37) TO-220 (37)

IRF130

Abstract: SHD217302A
Contextual Info: SENSITRON SEMICONDUCTOR SHD217302A TECHNICAL DATA DATA SHEET 317, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 100 Volt, 0.16 Ohm, 14A MOSFET • Fast Switching • Low RDS on • Equivalent to IRF130 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED.

IRF150 To220 package

Abstract: irf150 to220 IRFP240 xg32 ULTRA FAST RECOVERY RECTIFIERS to-220 irf64d to-3p 1500V IRF122 IRF123 IRF131
Contextual Info: FREDERICK COMPONENTS MIE 3> • 37n4ñS Q0D01b3 5 M F C I A CORTON CO M PA N Y C POWER MOSFETs P ART-N O IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF232

SHD217302

Contextual Info: SENSITRON SEMICONDUCTOR SHD217302A TECHNICAL DATA DATA SHEET 317, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.16 Ohm, 14A MOSFET œ Fast Switching œ Low RDS on œ Equivalent to IRF130 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.

Contextual Info: im SEM E IRF130 LAB MECHANICAL DATA D im e nsio ns in mm inches N-CHANNEL POWER MOSFET 100 V 14A V DSS I D(cont) 0.18Q ^D S (on) FEATURES • HERMETICALLY SEALED T O -3 METAL PACKAGE ^ 18.80 (0.740) dia. ^ ! Á t I 1.09 (0.043) 0.97 (0.038) dia. 2 pics.

Contextual Info: 4 3 D5 2 7 1 0053003 TFT • SI HARRIS HAS IRF130/ 131/ 132/133 IRF130R/1 31 R /132R /133R N -C hannel Power MOSFETs Avalanche Energy Rated* May 1992 Package Features TO-2Q4AA • 12A and 14A, 80V - 100V • rDS on = 0 .1 6 fi and 0 .2 3 ft SOURCE • Single Pulse Avalanche Energy Rated*

1RF130

Abstract: IRFI30 IRf 48 MOSFET 1RF131 03gm IRF N-Channel Power MOSFETs IRF132 MOSFET 150 N IRF T39 diode IRF130
Contextual Info: •01 D eT J ^ Ö V S O A I 3875081 G E SOLID STATE Standard Power M OSFETs OOlflEbT T f " 01E 18269 D T " ‘3 ? ‘"/i _ IRF130, IRF131, IRF132, IRF133 File N u m b e r 1 566 Power MOS Field-Effect Transistors

IRF130 mosfet

Abstract: irf133 83AD IRF133 international rectifier and/IRF133 irf132
Contextual Info: HE D I 40 5 5 4 5 2 OGOTOSG 1 | Data Sheet No. PD-9.303H INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER IO R T-39-11 REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRF130 IRF131 IRF132

Contextual Info: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA Pow er Field Effect Transistor IRF130 N-Channel Enhancement-Mode Silicon Gate T M O S This T M O S Power FET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid

TO-254

Abstract: T0-204 IRF450 equivalent
Contextual Info: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS

IRF130

Abstract: IRF132 IRF131 IRF133 TA17411 TB334 380uH
Contextual Info: IRF130, IRF131, IRF132, IRF133 S E M I C O N D U C T O R 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 12A and 14A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

irf130

Abstract: IRF133 IRF132 IRF131 IRF130 mosfet
Contextual Info: IRF130, IRF131, IRF132, IRF133 HARRIS S E M I C O N D U C T O R 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs October 1997 Description Features • High Input Im pedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: IRF130 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)14 I(DM) Max. (A) Pulsed I(D)9.0 @Temp (øC)100 IDM Max (@25øC Amb)56 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55

IRF130

Abstract: buv 18a IRF130 mosfet 5G75 IRF131 IRF132 IRF133 and/IRF133
Contextual Info: 796 4 1 4 2 _J Tfi SAMSUNG S E M I C ON D ÜC T OR DE 1 7T L i 4 1 4 E □0DS074 I NC 9.8 D 0 5 0 7 4 □ D Ì ^ - I N-CHANNEL POWER MOSFETS IRF130/131/132/133 FEATURES LOW RDS(on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

IRF130

Abstract: irf131 142SA
Contextual Info: 796 4 1 4 2 _ J Tfl SAMSUNG S E M I CONDÜCTOR DE I T T t i M l M S D0DS074 IN C 98D □ 05074 D T ^ -II N-CHANNEL POWER MOSFETS IRF130/131/132/133 FEA TU R E S LOW RDS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure