Untitled
Abstract: No abstract text available
Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRF9Z34,
SiHF9Z34
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated
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PDF
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IRF9Z34,
SiHF9Z34
O-220AB
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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IRF9Z34
Abstract: No abstract text available
Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220 Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRF9Z34,
SiHF9Z34
O-220
O-220
12-Mar-07
IRF9Z34
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IRF9Z34
Abstract: IRF9Z34PBF
Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated
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PDF
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IRF9Z34,
SiHF9Z34
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRF9Z34
IRF9Z34PBF
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IRF9Z34
Abstract: SiHF9Z34 SiHF9Z34-E3
Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated
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PDF
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IRF9Z34,
SiHF9Z34
O-220AB
2002/95/EC
O-220AB
11-Mar-11
IRF9Z34
SiHF9Z34-E3
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Untitled
Abstract: No abstract text available
Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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PDF
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IRF9Z34,
SiHF9Z34
O-220AB
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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PDF
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IRF9Z34,
SiHF9Z34
2002/95/EC
O-220AB
O-220AB
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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PDF
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IRF9Z34,
SiHF9Z34
O-220AB
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated
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PDF
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IRF9Z34,
SiHF9Z34
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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IRF9Z34
Abstract: irf9z34 mosfet SiHF9Z34 equivalent of irf9z34 SiHF9Z34-E3
Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220 Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRF9Z34,
SiHF9Z34
O-220
O-220
18-Jul-08
IRF9Z34
irf9z34 mosfet
equivalent of irf9z34
SiHF9Z34-E3
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AIC1578CS
Abstract: AIC1578 IRF9Z34 1N4148 1N5820 AIC1578CN MPP core
Text: AIC1578 High-Efficiency, Step-Down DC/DC Converter FEATURES DESCRIPTION • 4V to 20V Input Voltage Operation. • High Efficiency up to 95% . The AIC1578 is a high performance step-down DC/DC converter, designed to drive an external P-channel MOSFET to generate programmable
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AIC1578
AIC1578
AIC1578CS
IRF9Z34
1N4148
1N5820
AIC1578CN
MPP core
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Untitled
Abstract: No abstract text available
Text: IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Advanced Process Technology - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration • Surface Mount (IRF9Z34S/SiHF9Z34S)
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IRF9Z34S,
SiHF9Z34S
IRF9Z34L,
SiHF9Z34L
IRF9Z34S/SiHF9Z34S)
IRSiHF9Z34L/SiHF9Z34L)
O-262)
O-263)
12-Mar-07
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IRF9Z34
Abstract: IRF9Z34L IRF9Z34S SiHF9Z34S SiHF9Z34S-E3
Text: IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Advanced Process Technology - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration • Surface Mount (IRF9Z34S/SiHF9Z34S)
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IRF9Z34S,
SiHF9Z34S
IRF9Z34L,
SiHF9Z34L
IRF9Z34S/SiHF9Z34S)
IRSiHF9Z34L/SiHF9Z34L)
O-262)
O-263)
18-Jul-08
IRF9Z34
IRF9Z34L
IRF9Z34S
SiHF9Z34S-E3
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irf9z34
Abstract: irf9z34 mosfet LT 424 M7 RECTIFIER
Text: International S Rectifier PD-9.648A IRF9Z34 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V dss - "6 0 V
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IRF9Z34
T0-220
irf9z34
irf9z34 mosfet
LT 424
M7 RECTIFIER
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1RF9Z34
Abstract: Charge/1RF9Z34 IRF9Z34
Text: PD-9.648A In te rn a tio n a l Es R e c tifie r IRF9Z34 HEXFET® Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements
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OCR Scan
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PDF
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IRF9Z34
O-220
1RF9Z34
Charge/1RF9Z34
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IRF9Z30
Abstract: IRF9Z34
Text: P-CHANNEL POWER MOSFETS IRF9Z34/30 FEATURES TO-220 • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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OCR Scan
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PDF
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IRF9Z34/30
IRF9Z34
IRF9Z30
7Tb414E
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IRf 444 MOSFET
Abstract: DIODE Z32 irf9z34 IRF9Z30 irf9z34 mosfet IRF z34 MOSFET IRF high current p-channel P-channel power mosfet irf IRF9Z35 IRf 444
Text: SAMSUNG ELECTRONICS INC fc^E D • 7^4142 IRF9Z34/Z35 IRF9Z30/Z32 □ □ 1 2 2 Iìc T77 M S U G K P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R ds <on > Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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OCR Scan
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PDF
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IRF9Z34/Z35
IRF9Z30/Z32
IRF9Z30
IRF9Z34
IRF9Z32
IRF9Z35
IRf 444 MOSFET
DIODE Z32
irf9z34 mosfet
IRF z34 MOSFET
IRF high current p-channel
P-channel power mosfet irf
IRf 444
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IRF9Z34
Abstract: irf9z34 mosfet
Text: K Rectifier IRF9Z34 HEXFET® Power M O S F E T • • • • • • • INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements bSEH V DSS = - 6 0 V
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OCR Scan
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PDF
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IRF9Z34
O-220
IRF9Z34
irf9z34 mosfet
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F9Z34
Abstract: No abstract text available
Text: m 4flSS4S2 DDii,3fi ßci2 • inr pd-9.648a International Imr] Rectifier IR F9Z34 HEXFET« Power MOSFET • • • • • • • INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching
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OCR Scan
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PDF
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F9Z34
IRF9Z34
F9Z34
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IRF9511
Abstract: IRF9Z15 IRF9613 IRF9632 IRF9631 IRF9643 IRF9642 IRF9641
Text: FUNCTION GUIDE POWER MOSFETs TO-220 P-CHANNEL B Vdss V Part Number ID(onXA) RDS(onXn) -4 .0 0 -4 .7 0 -8 .9 0 -9 .8 0 -15 .0 0 -18 .0 0 0.70 0.50 0.33 0.28 0.21 0.14 IRF9Z12 IRF9Z10 IRF9Z22 IRF9Z20 IRF9Z32 IRF9Z30 - 60.00 -2 .5 0 -3 .0 0 -4 .0 0 -4 .7 0
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OCR Scan
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PDF
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O-220
IRF9Z12
IRF9Z10
IRF9Z22
IRF9Z20
IRF9Z32
IRF9Z30
IRF9513
IRF9511
IRF9Z15
IRF9613
IRF9632
IRF9631
IRF9643
IRF9642
IRF9641
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SSP6N60
Abstract: SSP5N70 IRF9511 IRF9Z34 ssp5n80 ssp7n55 IRF9521 SSP4N70 SSP3N70 IRF9631
Text: MOSFETs FUNCTION GUIDE 10-220 N-CHANNEL Continued Part Number SSP4N55 SSP6N55 BVossfV) lD(onj(A) RDs(on)(8) R0jc(K/W) PDfWatt) 550 4.00 6.00 2.500 1.67 1.00 75 125 0.90 140 302 307 2.500 1.800 1.67 1.200 0.90 75 125 140 302 307 5.000 3.500 2.500 1.67 75 125
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PDF
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SSP4N55
SSP6N55
SSP7N55
SSP4N60
SSP6N60
SSP7N60
SSP3N70
SSP4N70
SSP5N70
SSP3N80
IRF9511
IRF9Z34
ssp5n80
IRF9521
IRF9631
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irf9630
Abstract: T0-22Q IRF9Z34 IRF9Z14
Text: International HEXFET Power MOSFETs T0-22QAB liQ R R ectifier Logic-level H E X F E T s are fully-enhanced with 4 or 5V applied to the gate. T0-220AB Logic Level N-Channel Part Number V BR DSS Drain-to-Source Boston) Iq Continuous Breakdown On-State Drain Current
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OCR Scan
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PDF
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T0-22QAB
T0-220AB
IRL2203
IRL3705
IRLZ14
IRLZ24
IRLZ34
IRLZ44
IRL510
IRL520
irf9630
T0-22Q
IRF9Z34
IRF9Z14
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IRFBC20
Abstract: IRF9511 IRFBE32
Text: International I» i Rectifier HEXFET Power MOSFETs Plastic Insertale Package TO-220 N-Channel Part Number V os Drain Source Voltage Volts RDS(on) On-State Resistance (Ohms) I q Continuous Drain Current 25°C Case (Amps) •DM Pu'“ Drain Current (Amps)
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OCR Scan
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PDF
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O-220
IRF712
IRF710
IRF722
IRF720
IRF732
IRF730
IRF742
IRF740
IRF823
IRFBC20
IRF9511
IRFBE32
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1rf730
Abstract: IRF9513 IRF9521 irfbf30 IRFBG30 THOMSON DISTRIBUTOR 58e d IRF9511 IRF9523 IRFBC30 IRFBE32
Text: THO d SO N/ D I S T R I B U T O R SflE D • T02t.ñ73 0 D D S Ô D 2 52S ■ International Rectifier TCSK HEXFET Power MOSFETs Plastic Insertable Package TO-220 N-Channel >DM Pu'*« Drain Current Amps Pp Max Power Dissipation (Watts) 1.7 2.0 2.8 3.3 4.5
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OCR Scan
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PDF
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O-220
IRF712
T0-22QAB
IRF710
IRF722
IRF720
IRF732
IRF730
IRF742
IRF740
1rf730
IRF9513
IRF9521
irfbf30
IRFBG30
THOMSON DISTRIBUTOR 58e d
IRF9511
IRF9523
IRFBC30
IRFBE32
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