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    IRFD111 Search Results

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    IRFD111 Price and Stock

    Harris Semiconductor IRFD111

    IRFD111 - Small Signal, 1A, 80V, N-Channel, MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IRFD111 108 1
    • 1 $0.6826
    • 10 $0.6826
    • 100 $0.6416
    • 1000 $0.5802
    • 10000 $0.5802
    Buy Now

    IRFD111 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFD111 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFD111 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD111 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRFD111 Motorola European Master Selection Guide 1986 Scan PDF
    IRFD111 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFD111 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFD111 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFD111 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFD111(R) Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFD111R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD111R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFD111R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFD111 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFD110

    Abstract: IRFD113 HARRIS IRFD110 IRFD111 IRFD112 TA17441 TB334 IRFD110 91
    Text: IRFD110, IRFD111, IRFD112, IRFD113 Semiconductor 1A and 0.8A, 80V and 100V, 0.6 and 0.8 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1A and 0.8A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original
    PDF IRFD110, IRFD111, IRFD112, IRFD113 IRFD110 IRFD113 HARRIS IRFD110 IRFD111 IRFD112 TA17441 TB334 IRFD110 91

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


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    PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


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    PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    IRFD110

    Abstract: IRFD113 IRF0110 c 3209 IRFD111 IRFD112
    Text: - Standard Power MOSFETs File Number IRFD110, IRFD111, IRFD112, IRFD113 2314 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


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    PDF IRFD110, IRFD111, IRFD112, IRFD113 IRFD113 IRFD110 IRF0110 c 3209 IRFD111 IRFD112

    Untitled

    Abstract: No abstract text available
    Text: W vys S IRFD110, IRFD111, IRFD112, IRFD113 S em icon du cto r y 7 1A and 0.8A, 80V and 100V, 0.6 and 0.8 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1A and 0.8A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate


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    PDF IRFD110, IRFD111, IRFD112, IRFD113

    irfd113

    Abstract: IRFD110R IRFD111R IRFD112R IRFD113R IRFD111
    Text: _Rugged Power MOSFETs File N um ber IRFD110R, IRFD111R, IRFD112R, IRFD113R 2035 Avalanche Energy Rated N-Channel Power MOSFETs 1A and 0.8A, 60V-100V ros on = 0.60 and 0.80 N-CHANNEL ENHANCEMENT MODE o Features: • Single pulse avalanche energy rated


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    PDF IRFD110R, IRFD111R, IRFD112R, IRFD113R 0V-100V 92CS-42698 IRFD112R IRFD113R irfd113 IRFD110R IRFD111R IRFD111

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: • 43 022 71 O O S M CH O 77T ■ H A R R I HAS S I R F D 1 1 0 / 1 1 1 / 1 1 2 / 1 1 3 I R F D 1 1 0 R / 1 1 1 R / 1 1 2 R / 1 1 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Package Features 4-PJN DIP • 1A and 0.8 A , 8 0 V - 100V


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    PDF IRFD110, IRFD111, IRFD112, IRFD113

    1RFD110

    Abstract: FD110 FD-111 diode of IRFD 110 IRFD 110 HARRIS IRFD110 irfd11 IRFD111
    Text: 3 H A R R IS IRFD110/111/112/113 IRFD110R/111R/112R/113R N -C hannel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package 4 -P IN D IP • 1A and 0.8A, 80V - 100V TOP VIEW • rDS on) = 0 .6 ÎÎ and 0 .8 fi • Single Pulse Avalanche Energy Rated*


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    PDF IRFD110/111/112/113 IRFD110R/111R/112R/113R IRFD110, IRFD111, IRFD112, IRFD113 IRFD110R, IRFD111R, IRFD112R, IRFD113R 1RFD110 FD110 FD-111 diode of IRFD 110 IRFD 110 HARRIS IRFD110 irfd11 IRFD111

    IRFD110

    Abstract: IRF5134 IRF120 IRF540 1RF542 IRF510 IRF522 IRF611-3 IRFD1Z3 IRF143
    Text: _ THOnSON/ D I S TRIBUTOR 5fiE D • 105^573 0005705 35k ■ TCSK P o w er M O S FE T s IR F -S e rie s P o w e r M O S FE T s — N -C h a n n e l Package Maximum Ratings BV q s s V IDS (A) 'DS(O N) OHMS 60 0.40 0.50 0.80 1 1.1 1.3 3 3.50 3.50 4 5


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    PDF O-247 O-204 O-205 O-220 IRFD113 IRFD111 IRFD123 IRFD121 IRFF113 IRFF111 IRFD110 IRF5134 IRF120 IRF540 1RF542 IRF510 IRF522 IRF611-3 IRFD1Z3 IRF143

    MPF89

    Abstract: MPF6659 2 watt fet MPF910 IRFD213 IRFD220 IRFD221 IRFD222 IRFD223 IRFD9110
    Text: FIELD-EFFECT TRANSISTORS continued TMOS Power MOSFETs (continued) rds (on) @ Package FET DIP P CH TYPES 1 WATT FET DIP N CH TYPES 1 WATT T0226AE N CH TYPES 1 WATT V q S (t/h) ( '0 >DSS V(BR)DSS >GSS C|ss Crss *on 'off pk (A) Min Max Max (V) Min (nA) Max


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    PDF IRFD213 IRFD220 IRFD221 IRFD222 IRFD223 IRFD9120 IRFD9121 IRFD9210 IRFD9213 IRFD91103 MPF89 MPF6659 2 watt fet MPF910 IRFD9110

    IRF510

    Abstract: irf540
    Text: _ THOnSON/ D I S TRIBUTOR 5fiE D • 105^573 0005705 35k ■ TCSK P o w er M O S FE T s IR F -S e rie s P o w e r M O S FE T s — N -C h a n n e l Package Maximum Ratings BV q s s V IDS (A) 'DS(O N) OHMS 60 0.40 0.50 0.80 1 1.1 1.3 3 3.50 3.50 4 5


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    PDF 4-PIn80 IRFD113 IRFD111 IRFD123 IRFD121 IRFF113 IRFF111 IRF513 IRF511 IRFF123 IRF510 irf540

    IRFD110

    Abstract: D82BL2
    Text: PUF IRFD110.111 P82BL2.K2 1.Cl AMPERES 100, 60 VOLTS RPS(ON = 0-6 A FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


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    PDF 00A///S, IRFD110 D82BL2

    IRF540R

    Abstract: IRFP140R THOMSON DISTRIBUTOR IRF513R IRF633R THOMSON 58E THOMSON DISTRIBUTOR 58e d IRF511R IRFD111R IRFD113R
    Text: THOMSON/ DI STR IBUTOR SflE D • TDabflTB DODSTCH TT1 ■ TCSK Power MOSFETs Rugged-Series Power MOSFETs — N-Channel Package a if1 Maximum Ratings b v DSS V >d s (A) rDS(ON) OHMS E AS (mi) 60 0.80 1 1.1 1.3 3 3.50 4 5 6 7 7 8 8 12 14 24 27 33 40 0.80


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    PDF to-204 t0-205 t0-220 to-247 IRFD113R IRFD111R IRFD123R IRFD121R IRFF113R IRFF111R IRF540R IRFP140R THOMSON DISTRIBUTOR IRF513R IRF633R THOMSON 58E THOMSON DISTRIBUTOR 58e d IRF511R IRFD111R IRFD113R