IRFD921 Search Results

IRFD9210

Contextual Info: IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 8.9 Qgs (nC) 2.1 Qgd (nC) 3.9 Configuration • Repetitive Avalanche Rated 3.0 RoHS* • For Automatic Insertion

IRFD9210

Contextual Info: IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 8.9 Qgs (nC) 2.1 Qgd (nC) 3.9 Configuration • Repetitive Avalanche Rated 3.0 RoHS* • For Automatic Insertion

Contextual Info: IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 8.9 Qgs (nC) 2.1 Qgd (nC) 3.9 Configuration • Repetitive Avalanche Rated 3.0 RoHS* • For Automatic Insertion

IRFD9210PBF IR

Abstract: IRFD120
Contextual Info: PD- 95934 IRFD9210PbF • Lead-Free www.irf.com 1 10/28/04 IRFD9210PbF 2 www.irf.com IRFD9210PbF www.irf.com 3 IRFD9210PbF 4 www.irf.com IRFD9210PbF www.irf.com 5 IRFD9210PbF 6 www.irf.com IRFD9210PbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations

1rfd9210

Abstract: 387H IRFD9210 Rg2-55
Contextual Info: PD-9.387H International 11«1Rectifier IRFD9210 HEXFET Power M O S F E T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channe! Fast Switching Ease of Paralleling V d s s _ -2 0 0 V R DS on =

IRF7205

Abstract: IRF7342 IXTH7P50 T0-220AB BSS83 BSS84 irfp9240 IRF5210S IRFD9110 IRFD9210
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no TOKy lD Kofl: BSS84 BSS92 BS250 BSS83 IRF5210S IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRFD9014 BSP315P IRFD9024 IRF9610 IRFL9014 IRF9620 IRF9630 SI9953DY SI9948AEY

Contextual Info: IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 8.9 Qgs (nC) 2.1 Qgd (nC) 3.9 Configuration • Repetitive Avalanche Rated 3.0 RoHS* • For Automatic Insertion

IRFD9213

Contextual Info: H E I 4055452 0000422 T-37-25 7 | Data Sheet No. PD-9.387F INTERNATIONAL R E C T I F I E R I N T E R N A T I O N A L R E C T I F I E R IO R HEXFET* TRANSISTORS IRFD9210 P-CHANNEL HEXDIP IRFDS21 3 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE

Contextual Info: IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 8.9 Qgs (nC) 2.1 Qgd (nC) 3.9 Configuration • Repetitive Avalanche Rated 3.0 RoHS* • For Automatic Insertion

IRFD9213

Abstract: IRFD9210 387F c174 T3725 1RFD9213
Contextual Info: H E I 4055452 0000422 T-37-25 7 | Data Sheet No. PD-9.387F INTERNATIONAL R E C T IF IER I N T E R N A T I O N A L R E C T I F I E R IO R HEXFET* TRANSISTORS IRFD9210 P-CHANNEL HEXDIP IRFDS21 3 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE

IRFD9210PBF VISHAY

Abstract: IRFD9210 SiHFD9210
Contextual Info: IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 8.9 Qgs (nC) 2.1 Qgd (nC) 3.9 Configuration • Repetitive Avalanche Rated 3.0 RoHS* • For Automatic Insertion

IRFD120

Abstract: VISHAY DIODE MARKING CODE
Contextual Info: PD- 95934 IRFD9210PbF • Lead-Free 10/28/04 Document Number: 91140 www.vishay.com 1 IRFD9210PbF Document Number: 91140 www.vishay.com 2 IRFD9210PbF Document Number: 91140 www.vishay.com 3 IRFD9210PbF Document Number: 91140 www.vishay.com 4 IRFD9210PbF Document Number: 91140

Contextual Info: IRFD9210_RC, SiHFD9210_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 8.9 Qgs (nC) 2.1 Qgd (nC) 3.9 Configuration • Repetitive Avalanche Rated 3.0 RoHS* • For Automatic Insertion

IRFD9210

Abstract: DIODE S4 72A 387H IRFD921
Contextual Info: International S Rectifier PD-9.387H IRFD9210 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel Fast Switching Ease of Paralleling VDSS = -200V ^DS on = 3 -0 i i

Contextual Info: 4655452 tor 137 H IN R PD-9.387H R e c tifie r _ IRFD9210 HEXFET P o w e r M O S F E T • • • • • • • 0015D 7Q IN T E R N A T IO N A L R E C T IF IE R Dynam ic dv/dt Rating Repetitive Avalanche Rated For Autom atic Insertion End Stackable

Contextual Info: IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 8.9 Qgs (nC) 2.1 Qgd (nC) 3.9 Configuration • Repetitive Avalanche Rated 3.0 RoHS* • For Automatic Insertion

SiHFD9210

Contextual Info: IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 8.9 Qgs (nC) 2.1 Qgd (nC) 3.9 Configuration • Repetitive Avalanche Rated 3.0 RoHS* • For Automatic Insertion

IRF0110

Abstract: IRF0120 IRFD9123 irfu320 THOMSON DISTRIBUTOR 58e d IRFD113 IRFD1Z0 IRFD9014 IRFU121 irfu310
Contextual Info: THOMSON/ DISTRIBUTOR SÄE I • 1ClEbB73 0 0 0 S 8 0 0 International io n Rectifier 7SS ■ HEXFET Power MOSFETs Plastic Insertable Package HEXDIP N-Channel Vqs Drain Source Voltage Volts) Part Number IRFD015 IRFD014 IRFD025 IRFD024 IRFD1Z3 IRFD113 IRFD123

IRGKI165F06

Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)

F111

Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120
Contextual Info: - 258 - f t M t± £ € A£ ft Vd s or i Vd g % V Vg s ( V) & ( T a = 2 5 cC ) Id 1! Idss Igss Pd * /C H * /CH (A ) (W) ( n A) Vg s ( V) ( M A) Vg s Vd s (V ) th ) % Vd s = Vg s min max ( V) ( V) Id ( itA) fa ft Fo s(o n ) (Ta=25^0) I d ( on) g fs C iss

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

irf1010e equivalent

Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
Contextual Info: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178