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    IRFF130 Price and Stock

    Flip Electronics IRFF130

    Power Field-Effect Transistor, 8
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    DigiKey IRFF130 Tray 86 30
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    • 100 $19.74
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    Infineon Technologies AG IRFF130

    Trans MOSFET N-CH 100V 8A 3-Pin TO-39 - Trays (Alt: IRFF130)
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    Avnet Americas IRFF130 Tray 0 Weeks, 2 Days 34
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    • 100 $20.72
    • 1000 $19.536
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    Future Electronics IRFF130 Bulk 100
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    IRFF130 Tray 100
    • 1 $14.14
    • 10 $13.97
    • 100 $13.69
    • 1000 $13.47
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    Bristol Electronics IRFF130 4
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    New Jersey Semiconductor Products, Inc. IRFF130

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    Bristol Electronics IRFF130 118 1
    • 1 $19.2
    • 10 $19.2
    • 100 $16.9843
    • 1000 $16.9843
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    New Jersey Semiconductor Products Inc IRFF130

    MOSFET Transistor, N-Channel, TO-205AF
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    Quest Components IRFF130 94
    • 1 $20.8
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    • 100 $19.2
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    International Rectifier IRFF130

    Electronic Component
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    ComSIT USA IRFF130 15
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    Find more IRFF130 price and stock on Findchips.com

    IRFF130 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRFF130 International Rectifier REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE Original PDF
    IRFF130 Intersil 8.0A, 100V, 0.180 ?, N-Channel Power MOSFET Original PDF
    IRFF130 Semelab N-Channel MOSFET in a Hermetically Sealed TO39 Metal Package Original PDF
    IRFF130 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFF130 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 8.0A. Scan PDF
    IRFF130 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF130 International Rectifier TO-39 Package N-Channel HEXFET Scan PDF
    IRFF130 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF
    IRFF130 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRFF130 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF130 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF130 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFF130 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFF130 Unknown FET Data Book Scan PDF
    IRFF130 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    IRFF130R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF130R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFF130R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFF130 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: , LJnc. TELEPHONE: 973 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 IRFF130 Features 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET • 8.0A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRFF130

    IRFF130

    Abstract: No abstract text available
    Text: PD - 90430C IRFF130 JANTX2N6796 JANTXV2N6796 REF:MIL-PRF-19500/557 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF130 BVDSS 100V RDS(on) 0.18Ω ID 8.0A  The HEXFET technology is the key to International


    Original     		PDF 90430C IRFF130 JANTX2N6796 JANTXV2N6796 MIL-PRF-19500/557 O-205AF) electrical252-7105 IRFF130

    IRFF130

    Abstract: TA17411 TB334 AVALANCHE TRANSISTOR
    Text: IRFF130 Data Sheet March 1999 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET 1564.3 Features • 8.0A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF130 IRFF130 TA17411 TB334 AVALANCHE TRANSISTOR

    IRFF130

    Abstract: JANTX2N6796 JANTXV2N6796
    Text: PD - 90430C IRFF130 JANTX2N6796 JANTXV2N6796 REF:MIL-PRF-19500/557 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF130 BVDSS 100V RDS(on) 0.18Ω ID 8.0A  The HEXFET technology is the key to International


    Original     		PDF 90430C IRFF130 JANTX2N6796 JANTXV2N6796 MIL-PRF-19500/557 O-205AF) IRFF130 JANTX2N6796 JANTXV2N6796

    TA17411

    Abstract: IRFF130
    Text: IRFF130 Data Sheet Title FF1 bt 0A, 0V, 80 m, March 1999 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF130 TA17411 IRFF130

    IRFF130

    Abstract: No abstract text available
    Text: IRFF130, IRFF131, IRFF132, IRFF133 S E M I C O N D U C T O R 7.0A and 8.0A, 80V and 100V, 0.18 and 0.25 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 7.0A and 8.0A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRFF130, IRFF131, IRFF132, IRFF133 TA17411. IRFF130

    IRFF130

    Abstract: TA17411 TB334
    Text: IRFF130 Data Sheet January 2002 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features • 8.0A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF130 IRFF130 TA17411 TB334

    IRFF130

    Abstract: No abstract text available
    Text: IRFF130 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.


    Original     		PDF IRFF130 O205AF) 11-Oct-02 IRFF130

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original     		PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    Untitled

    Abstract: No abstract text available
    Text: i H A R R IRFF130, IRFF131, IRFF132, IRFF133 i s s e - c o . o u c t o r 7.0A and 8.0A, 80V and 100V, 0.18 and 0.25 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 7.0A and 8.0A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFF130, IRFF131, IRFF132, IRFF133 RFF133

    18261

    Abstract: IRFF130 IRFF131 IRFF132 IRFF133
    Text: 3 |t | 3 û 75[]ô 1 0 0 1 0 2 5 e! b ~ 38 750 81 G E S O L I D S T A TE 0 1 E 18259 Standard Power M O S F E T s _ IRFF130, IRFF131, IRFF132, IRFF133 D File N um ber 1564 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF IRFF130, IRFF131, IRFF132, IRFF133 0V-100V IRFF132 IRFF133 S-20V 18261 IRFF130 IRFF131

    IRFF

    Abstract: IRFF130 IRFF131
    Text: [FUT FIELD EFFECT POWER TRANSISTOR IRFF130,131 8.0 AMPERES 100, 60 VOLTS RDS ON = 0.18 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF IRFF130 00A///sec, S0100 250MA, rds10ni IRFF IRFF131

    IRFF130R

    Abstract: IRFF131R IRFF132R IRFF133R
    Text: Rugged Power MOSFETs File Number 2024 IRFF130R, IRFF131R, IRFF132R, IRFF133R Avalanche Energy Rated N-Channel Power MOSFETs 7 ,0A and 8.0A, 60V-100V rDs on = 0 .1 8 0 a nd 0.25Q N-CHANNEL ENHANCEMENT MODE D Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRFF130R, IRFF131R, IRFF132R, IRFF133R 0V-100V IRFF132R IIRFF133R 92cs-42660 IRFF130R IRFF131R IRFF133R

    Untitled

    Abstract: No abstract text available
    Text: •I iT ! 43D5271 H A R G0S414D R DES IS HAS IRFF130/131/13 2/133 IRFF130R/131 R /132R/133R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO -2 0 5 A F • 7.0A and 8.0A, 80V - 100V • rDS on = 0.18 fl and 0 .2 5 fi • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF 43D5271 G0S414D IRFF130/131/13 IRFF130R/131 /132R/133R IRFF13Q, IRFF131, IRFF132, IRFF133 IRFF130R,

    IRFF130

    Abstract: IRFF131 IRFF132 IRFF133 C 3259
    Text: -Standard Power MOSFETs IRFF130, IRFF131, IRFF132, IRFF133 File Num ber 1564 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF IRFF130, IRFF131, IRFF132, IRFF133 0V-100V 92CS-33741 IRFF132 IRFF133 IRFF130 IRFF131 C 3259

    transco

    Abstract: IRFF131
    Text: ih a r r is IRFF130, IRFF131, IRFF132, IRFF133 7.0A and 8.0A, 80V and 100V, 0.18 and 0.25 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 7.0A and 8.0A, 80V and 100V • High Input Im pedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFF130, IRFF131, IRFF132, IRFF133 TA17411. IRFF132 transco IRFF131

    IRFF131

    Abstract: IC 3909 G-337 G337 diode 341F IRFF130 IRFF132 IRFF133 g337 ir mosfet 337
    Text: 11E D I 4ÖSS4S2 0001350 7 | i n t e r n a t i o n a l Data Sheet No. PD-9.341F r e c t i f i e r INTERNATIONAL RECTIFIER IÖR T-39-09 HEXFET TRANSISTORS IRFF130 IRFF131 IRFF132 IRFF133 N-CHANNEL POWER MOSFETs T Ü -3 9 PACKAGE 100 Volt, 0.18 Ohm HEXFET


    OCR Scan     		PDF T-39-09 IRFF131 G-340 IRFF131 IC 3909 G-337 G337 diode 341F IRFF130 IRFF132 IRFF133 g337 ir mosfet 337

    TO-254

    Abstract: T0-204 IRF450 equivalent
    Text: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS


    OCR Scan     		PDF 2N6756 2N6758 2N6760 2N6762 2N6764 2N6766 2N6768 2N6770 2N6788 2N6790 TO-254 T0-204 IRF450 equivalent

    IRF09120

    Abstract: 251G FF323 IRFF310 F9122 IRFF130 IRF0120
    Text: - f M % tt ± $ H V ds or € Vg s T a = 2 5 l3 Id Po a Vgs th ) I dss I gs s m tf ï & ï Ds(on) Vd s = ’l ï (V) * /CH * /CH (A) (W) (nA) Vgs (V) C m A) V ds (V) m in max (V) (V) I d (on) C is s g fs Coss C rss $1- B m % V g s =0 (max) Id (mA) ♦ typ


    OCR Scan     		PDF IRFF310 O-205AF FF312 FF322 FF323 25RFF230 IRFF231 IRF09120 251G FF323 IRFF310 F9122 IRFF130 IRF0120

    Untitled

    Abstract: No abstract text available
    Text: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical


    OCR Scan     		PDF

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


    OCR Scan     		PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211

    F111

    Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120
    Text: - 258 - f t M t± £ € A£ ft Vd s or i Vd g % V Vg s ( V) & ( T a = 2 5 cC ) Id 1! Idss Igss Pd * /C H * /CH (A ) (W) ( n A) Vg s ( V) ( M A) Vg s Vd s (V ) th ) % Vd s = Vg s min max ( V) ( V) Id ( itA) fa ft Fo s(o n ) (Ta=25^0) I d ( on) g fs C iss


    OCR Scan     		PDF 1RFD9120 IRFD9123 IRF09210 O-205AF IRFF222 1RFF223 T0-205AF 1RFF230 F111 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF