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Infineon Technologies AG IRFF310 IRFF310 Series 400 V 3.6 Ohm 1.25 A Through Hole Hexfet®Transistor - TO-39
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Future Electronics	IRFF310	Tray			100	1 $17.14 10 $17.14 100 $17.14 1000 $17.14 10000 $17.14	Buy Now
New Jersey Semiconductor Products, Inc. IRFF310
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IRFF310		5,052		1	1 $19.2 10 $19.2 100 $16.9843 1000 $15.744 10000 $15.744	Buy Now
International Rectifier IRFF310
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IRFF310		8			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	IRFF310		5			1 $30.74 10 $30.74 100 $30.74 1000 $30.74 10000 $30.74	Buy Now
ComSIT USA	IRFF310		57			1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Jersey Semiconductor Products Inc IRFF310 POWER FIELD-EFFECT TRANSISTOR, 1.35A I(D), 400V, 3.6OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-205AF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	IRFF310		4,041			1 $20.8 10 $20.8 100 $20.8 1000 $16 10000 $16	Buy Now

IRFF310 Datasheets (18)

Part	Manufacturer	Description	Datasheet Type	PDF
IRFF310	International Rectifier	HEXFET Transistor	Original	PDF
IRFF310	Intersil	1.35A, 400V, 3.600 ?, N-Channel Power MOSFET	Original	PDF
IRFF310	Semelab	N-Channel MOSFET in a Hermetically Sealed TO39 Metal Package	Original	PDF
IRFF310	General Electric	Power Transistor Data Book 1985	Scan	PDF
IRFF310	General Electric	Power MOSFET field effect power transistor. Drain-source voltage 400 V.	Scan	PDF
IRFF310	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
IRFF310	International Rectifier	TO-39 Package N-Channel HEXFET	Scan	PDF
IRFF310	International Rectifier	N-Channel Power MOSFETs	Scan	PDF
IRFF310	International Rectifier	TO-39 N-Channel HEXFET Power MOSFETs	Scan	PDF
IRFF310	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFF310	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFF310	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
IRFF310	Unknown	FET Data Book	Scan	PDF
IRFF310	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF

IRFF310	Vishay Siliconix	Shortform Siliconix Datasheet	Short Form	PDF
IRFF310R	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
IRFF310R	International Rectifier	Rugged Series Power MOSFETs - N-Channel	Scan	PDF
IRFF310R	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF

IRFF310 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: PD - 90425C IRFF310 JANTX2N6786 JANTXV2N6786 REF:MIL-PRF-19500/556 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF310 BVDSS 400V RDS(on) 3.6Ω ID 1.25A  The HEXFET technology is the key to International	Original	PDF	90425C IRFF310 JANTX2N6786 JANTXV2N6786 MIL-PRF-19500/556 O-205AF)
Untitled Abstract: No abstract text available Text: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRFF310 Feafares 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET • 1.35A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,	Original	PDF	IRFF310
IRFF310 Abstract: No abstract text available Text: IRFF310 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.	Original	PDF	IRFF310 O205AF) 11-Oct-02 IRFF310
Untitled Abstract: No abstract text available Text: IRFF310 Data Sheet Title FF3 bt 35A 00V, 00 m, an- 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of	Original	PDF	IRFF310 TB334
Untitled Abstract: No abstract text available Text: IRFF310 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)1.25 I(DM) Max. (A) Pulsed I(D)800m @Temp (øC)100# IDM Max (@25øC Amb)5.5 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)15# Minimum Operating Temp (øC)-55	Original	PDF	IRFF310
IRFF310 Abstract: TB334 Text: IRFF310 Data Sheet January 2002 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET Features • 1.35A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of	Original	PDF	IRFF310 IRFF310 TB334
IRFF310 Abstract: JANTX2N6786 JANTXV2N6786 Text: PD - 90425C IRFF310 JANTX2N6786 JANTXV2N6786 REF:MIL-PRF-19500/556 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF310 BVDSS 400V RDS(on) 3.6Ω ID 1.25A  The HEXFET technology is the key to International	Original	PDF	90425C IRFF310 JANTX2N6786 JANTXV2N6786 MIL-PRF-19500/556 O-205AF) IRFF310 JANTX2N6786 JANTXV2N6786
IRFF310 Abstract: TB334 Text: IRFF310 Data Sheet March 1999 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET • 1.35A, 400V • rDS ON = 3.600Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics	Original	PDF	IRFF310 TB334 TA17444. IRFF310 TB334
IRF460 Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065 Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,	Original	PDF	30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
CMF65-5.556K Abstract: No abstract text available Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 27 March 2011. MIL-PRF-19500/556K 27 December 2010 SUPERSEDING MIL-PRF-19500/556J 16 June 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,	Original	PDF	MIL-PRF-19500/556K MIL-PRF-19500/556J 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, 2N6786U, MIL-PRF-19500. CMF65-5.556K
Complementary MOSFETs buz11 Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110 Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	PDF	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 Complementary MOSFETs buz11 irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
IRFF310 Abstract: IRFF311 Text: SOLID STATL bflC D • J aä vh uü i QUQÜ173 d \| ~ D T - 3 5 “< r& [FUT FIELD EFFECT POWER TRANSISTOR IRFF310,311 1.35 AMPERES 400, 350 VOLTS r DS ON = 3-6 ß Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology	OCR Scan	PDF	IRFF310 IRFF311
DM 311 BH Abstract: BB 313 T-2V07 IRFF310 IRFF312 irf 313 Text: SILICONIX INC lflE D f T Silicon îx J-W incorporated • ÔE54735 0014013 7 ■ IRFF310/311/312/313 N-Channel Enhancement Mode Transistors T -2 °l-0 7 TO-2Q5AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR\|DSS IRFF310 400 3.6 1.35 IRFF311 350 3.6 1.35 IRFF312	OCR Scan	PDF	S5473S 1RFF310/311/312/313 T-2V07 O-205AF IRFF310 IRFF311 IRFF312 IRFF313 rff31i DM 311 BH BB 313 irf 313
irf310 Abstract: irf 3280 IRFF311 IRFF310 IRFF312 IRFF313 Text: -Standard Power MOSFETs File Number 1888 IRFF310, IRFF311, IRFF312, IRFF313 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors	OCR Scan	PDF	IRFF310, IRFF311, IRFF312, IRFF313 92CS-33741 IRFF313 FF312 irf310 irf 3280 IRFF311 IRFF310 IRFF312

Untitled Abstract: No abstract text available Text: IRFF310, IRFF311, IRFF312, IRFF313 HARRIS S E M I C O N D U C T O R 1.35A and 1.15A, 350V and 400V, 3.6 and 5.0 Ohm, N-Channel Power MOSFETs July 1998 Description Features 1.35A and 1.15A, 350V and 400V rDS ON = These are N-Channel enhancement mode silicon gate	OCR Scan	PDF	IRFF310, IRFF311, IRFF312, IRFF313 TA17444. RFF313
IRFF310 Abstract: IRFF311 Text: [jagMiìMKS [FIT FIELD EFFECT POWER TRANSISTOR IRFF310,311 1.35 AMPERES 400, 350 VOLTS r DS ON = 3.6 n Preliminary This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged	OCR Scan	PDF	IRFF310 00A/ais, IRFF311
Untitled Abstract: No abstract text available Text: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical	OCR Scan	PDF
IC LM 364 pn Abstract: G359 A/M29F002BT(45/55/70/90/IC LM 364 pn Text: HE 0 I 4055455 000^302 4 \| T - S INTERNATIONAL R E C T I F I E R 7 IÖR IN T E R N A T IO N A L R E C T IF IE R HEXFET f - c Data Sheet No. PD-9.355E TRANSISTORS IRFF31 O IRFF311 N-CHANNEL POWER MOSFETs TÜ-39 PACKAGE IRFF31 2 IRFF313 Features: 400 Volt, 3.6 Ohm HEXFET	OCR Scan	PDF	IRFF31 IRFF311 IRFF313 G-364 IC LM 364 pn G359 A/M29F002BT(45/55/70/90/IC LM 364 pn
MMBF112L Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211 Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty	OCR Scan	PDF	06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
triac zd 607 Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.	OCR Scan	PDF	SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
EATON CM20A Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268 Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main	OCR Scan	PDF
transistors BC 557C Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555 Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and	OCR Scan	PDF
1RF9130 Abstract: jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120 Text: Government/ Space Products bitematinnai ¡¡¡F te S ? H E X F E T , Mil-Qualified N-Channel Types JEDEC 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6796 2N6798 2N6800 2N6802 Part Numbers JANTX JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 JANTX2N6790	OCR Scan	PDF	JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 JANTX2N6790 JANTX2N6792 JANTX2N6794 JANTX2N6796 JANTX2N6798 JANTX2N6800 1RF9130 jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120
2N6802 JANTX Abstract: No abstract text available Text: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d es c rib e s 19 d ev ic e s , 12 N -C h a n n e l and 7 P -C h a n n e l, all c o n tain e d in the T 0 - 2 0 5 A F T O -3 9 p ac k a g e . This d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical	OCR Scan	PDF	I-200 2N6802 JANTX

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IRFF310 Search Results

IRFF310 Price and Stock

Infineon Technologies AG IRFF310

New Jersey Semiconductor Products, Inc. IRFF310

International Rectifier IRFF310

New Jersey Semiconductor Products Inc IRFF310

IRFF310 Datasheets (18)

IRFF310 Datasheets Context Search

Untitled

Untitled

IRFF310

Untitled

Untitled

IRFF310

IRFF310

IRFF310

IRF460

CMF65-5.556K

Complementary MOSFETs buz11

IRFF310

DM 311 BH

irf310

Untitled

IRFF310

Untitled

IC LM 364 pn

MMBF112L

triac zd 607

EATON CM20A

transistors BC 557C

1RF9130

2N6802 JANTX