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    IRFF310 Price and Stock

    Infineon Technologies AG IRFF310

    IRFF310 Series 400 V 3.6 Ohm 1.25 A Through Hole Hexfet®Transistor - TO-39
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    Future Electronics IRFF310 Tray 100
    • 1 $17.14
    • 10 $17.14
    • 100 $17.14
    • 1000 $17.14
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    New Jersey Semiconductor Products, Inc. IRFF310

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFF310 5,052 1
    • 1 $19.2
    • 10 $19.2
    • 100 $16.9843
    • 1000 $15.744
    • 10000 $15.744
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    International Rectifier IRFF310

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    Bristol Electronics IRFF310 8
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    Quest Components IRFF310 5
    • 1 $30.74
    • 10 $30.74
    • 100 $30.74
    • 1000 $30.74
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    ComSIT USA IRFF310 57
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    New Jersey Semiconductor Products Inc IRFF310

    POWER FIELD-EFFECT TRANSISTOR, 1.35A I(D), 400V, 3.6OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-205AF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFF310 4,041
    • 1 $20.8
    • 10 $20.8
    • 100 $20.8
    • 1000 $16
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    IRFF310 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRFF310 International Rectifier HEXFET Transistor Original PDF
    IRFF310 Intersil 1.35A, 400V, 3.600 ?, N-Channel Power MOSFET Original PDF
    IRFF310 Semelab N-Channel MOSFET in a Hermetically Sealed TO39 Metal Package Original PDF
    IRFF310 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFF310 General Electric Power MOSFET field effect power transistor. Drain-source voltage 400 V. Scan PDF
    IRFF310 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF310 International Rectifier TO-39 Package N-Channel HEXFET Scan PDF
    IRFF310 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRFF310 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF
    IRFF310 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF310 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF310 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFF310 Unknown FET Data Book Scan PDF
    IRFF310 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFF310 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    IRFF310R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF310R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFF310R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFF310 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD - 90425C IRFF310 JANTX2N6786 JANTXV2N6786 REF:MIL-PRF-19500/556 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF310 BVDSS 400V RDS(on) 3.6Ω ID 1.25A  The HEXFET technology is the key to International


    Original     		PDF 90425C IRFF310 JANTX2N6786 JANTXV2N6786 MIL-PRF-19500/556 O-205AF)

    Untitled

    Abstract: No abstract text available
    Text: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRFF310 Feafares 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET • 1.35A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRFF310

    IRFF310

    Abstract: No abstract text available
    Text: IRFF310 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.


    Original     		PDF IRFF310 O205AF) 11-Oct-02 IRFF310

    Untitled

    Abstract: No abstract text available
    Text: IRFF310 Data Sheet Title FF3 bt 35A 00V, 00 m, an- 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF310 TB334

    Untitled

    Abstract: No abstract text available
    Text: IRFF310 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)1.25 I(DM) Max. (A) Pulsed I(D)800m @Temp (øC)100# IDM Max (@25øC Amb)5.5 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)15# Minimum Operating Temp (øC)-55


    Original     		PDF IRFF310

    IRFF310

    Abstract: TB334
    Text: IRFF310 Data Sheet January 2002 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET Features • 1.35A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF310 IRFF310 TB334

    IRFF310

    Abstract: JANTX2N6786 JANTXV2N6786
    Text: PD - 90425C IRFF310 JANTX2N6786 JANTXV2N6786 REF:MIL-PRF-19500/556 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF310 BVDSS 400V RDS(on) 3.6Ω ID 1.25A  The HEXFET technology is the key to International


    Original     		PDF 90425C IRFF310 JANTX2N6786 JANTXV2N6786 MIL-PRF-19500/556 O-205AF) IRFF310 JANTX2N6786 JANTXV2N6786

    IRFF310

    Abstract: TB334
    Text: IRFF310 Data Sheet March 1999 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET • 1.35A, 400V • rDS ON = 3.600Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    Original     		PDF IRFF310 TB334 TA17444. IRFF310 TB334

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original     		PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    CMF65-5.556K

    Abstract: No abstract text available
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 27 March 2011. MIL-PRF-19500/556K 27 December 2010 SUPERSEDING MIL-PRF-19500/556J 16 June 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,


    Original     		PDF MIL-PRF-19500/556K MIL-PRF-19500/556J 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, 2N6786U, MIL-PRF-19500. CMF65-5.556K

    Complementary MOSFETs buz11

    Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 Complementary MOSFETs buz11 irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110

    IRFF310

    Abstract: IRFF311
    Text: SOLID STATL bflC D • J aä vh uü i QUQÜ173 d | ~ D T - 3 5 “< r& [FUT FIELD EFFECT POWER TRANSISTOR IRFF310,311 1.35 AMPERES 400, 350 VOLTS r DS ON = 3-6 ß Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology


    OCR Scan     		PDF IRFF310 IRFF311

    DM 311 BH

    Abstract: BB 313 T-2V07 IRFF310 IRFF312 irf 313
    Text: SILICONIX INC lflE D f T Silicon îx J-W incorporated • ÔE54735 0014013 7 ■ IRFF310/311/312/313 N-Channel Enhancement Mode Transistors T -2 °l-0 7 TO-2Q5AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR|DSS IRFF310 400 3.6 1.35 IRFF311 350 3.6 1.35 IRFF312


    OCR Scan     		PDF S5473S 1RFF310/311/312/313 T-2V07 O-205AF IRFF310 IRFF311 IRFF312 IRFF313 rff31i DM 311 BH BB 313 irf 313

    irf310

    Abstract: irf 3280 IRFF311 IRFF310 IRFF312 IRFF313
    Text: -Standard Power MOSFETs File Number 1888 IRFF310, IRFF311, IRFF312, IRFF313 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF IRFF310, IRFF311, IRFF312, IRFF313 92CS-33741 IRFF313 FF312 irf310 irf 3280 IRFF311 IRFF310 IRFF312

    Untitled

    Abstract: No abstract text available
    Text: IRFF310, IRFF311, IRFF312, IRFF313 HARRIS S E M I C O N D U C T O R 1.35A and 1.15A, 350V and 400V, 3.6 and 5.0 Ohm, N-Channel Power MOSFETs July 1998 Description Features 1.35A and 1.15A, 350V and 400V rDS ON = These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFF310, IRFF311, IRFF312, IRFF313 TA17444. RFF313

    IRFF310

    Abstract: IRFF311
    Text: [jagMiìMKS [FIT FIELD EFFECT POWER TRANSISTOR IRFF310,311 1.35 AMPERES 400, 350 VOLTS r DS ON = 3.6 n Preliminary This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF IRFF310 00A/ais, IRFF311

    Untitled

    Abstract: No abstract text available
    Text: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical


    OCR Scan     		PDF

    IC LM 364 pn

    Abstract: G359 A/M29F002BT(45/55/70/90/IC LM 364 pn
    Text: HE 0 I 4055455 000^302 4 | T - S INTERNATIONAL R E C T I F I E R 7 IÖR IN T E R N A T IO N A L R E C T IF IE R HEXFET f - c Data Sheet No. PD-9.355E TRANSISTORS IRFF31 O IRFF311 N-CHANNEL POWER MOSFETs TÜ-39 PACKAGE IRFF31 2 IRFF313 Features: 400 Volt, 3.6 Ohm HEXFET


    OCR Scan     		PDF IRFF31 IRFF311 IRFF313 G-364 IC LM 364 pn G359 A/M29F002BT(45/55/70/90/IC LM 364 pn

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


    OCR Scan     		PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    transistors BC 557C

    Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
    Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and


    OCR Scan     		PDF

    1RF9130

    Abstract: jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120
    Text: Government/ Space Products bitematinnai ¡¡¡F te S ? H E X F E T , Mil-Qualified N-Channel Types JEDEC 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6796 2N6798 2N6800 2N6802 Part Numbers JANTX JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 JANTX2N6790


    OCR Scan     		PDF JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 JANTX2N6790 JANTX2N6792 JANTX2N6794 JANTX2N6796 JANTX2N6798 JANTX2N6800 1RF9130 jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120

    2N6802 JANTX

    Abstract: No abstract text available
    Text: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d es c rib e s 19 d ev ic e s , 12 N -C h a n n e l and 7 P -C h a n n e l, all c o n tain e d in the T 0 - 2 0 5 A F T O -3 9 p ac k a g e . This d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical


    OCR Scan     		PDF I-200 2N6802 JANTX