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    IRFP 250 Search Results

    IRFP 250 Result Highlights (1)

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    AFE8221IRFPQ1 Texas Instruments Automotive Catalog Dual IF Interface for Digital Radio 144-HTQFP -40 to 85 Visit Texas Instruments Buy
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    IRFP 250 Price and Stock

    Infineon Technologies AG IRFP250NPBF

    MOSFET N-CH 200V 30A TO247AC
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    Infineon Technologies AG IRFP250MPBF

    MOSFET N-CH 200V 30A TO247AC
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    DigiKey IRFP250MPBF Tube 2,687 1
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    Vishay Siliconix IRFP250PBF

    MOSFET N-CH 200V 30A TO247-3
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    DigiKey IRFP250PBF Tube 901 1
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    IXYS Corporation IRFP250

    MOSFET N-CH 200V 30A TO247AD
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    Quest Components IRFP250 1
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    STMicroelectronics IRFP250

    MOSFET N-CH 200V 33A TO247-3
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    Find more IRFP 250 price and stock on Findchips.com

    IRFP 250 Datasheets (46)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFP250 Fairchild Semiconductor 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Original PDF
    IRFP250 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRFP250 Intersil 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Original PDF
    IRFP250 IXYS Standard Power MOSFET Original PDF
    IRFP250 Samsung Electronics N-Channel Power Mosfets Original PDF
    IRFP250 STMicroelectronics N-CHANNEL MOSFET0 Original PDF
    IRFP250 STMicroelectronics N-CHANNEL 200V 0.073 ? 33A TO-247 POWERMESH II Original PDF
    IRFP250 STMicroelectronics N-CHANNEL 200V 0.073 ? 33A TO-247 POWERMESH II MOSFET Original PDF
    IRFP250 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFP250 FCI POWER MOSFETs Scan PDF
    IRFP250 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRFP250 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFP250 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFP250 International Rectifier TO-220 / TO-247 HEXFET Power MOSFETs Scan PDF
    IRFP250 International Rectifier TO-247 N-Channel Plastic Package HEXFETs Scan PDF
    IRFP250 International Rectifier N-Channel(Hexfet Transistors) Scan PDF
    IRFP250 IXYS High Voltage Power MOSFETs Scan PDF
    IRFP250 IXYS High Voltage Power MOSFETs Scan PDF
    IRFP250 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFP250 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    IRFP 250 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet irfp 250 A

    Abstract: No abstract text available
    Text: Standard Power MOSFET IRFP 254 VDSS ID cont RDS(on) = 250 V = 23 A = 0.14 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 250 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 250 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF O-247 mosfet irfp 250 A

    IRFP 640

    Abstract: IRFP254
    Text: IRFP 254 Standard Power MOSFET VDSS = 250 V ID cont = 23 A RDS(on) = 0.14 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 250 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF O-247 IRFP 640 IRFP254

    MOSFET 11N80 Data sheet

    Abstract: MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640
    Text: Standard MOSFET T-Series MegaMOSTMFET Standard MOSFET T-Series Contents VDSS max TO-247 TO-220 IXTP TO-263 (IXTA) TO-264 miniBLOC (IXTN) ID(cont) TC = 25 °C A R DS(on) TC = 25 °C Ω 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250


    Original     		PDF O-247 O-220 O-263 O-264 67N10 75N10 50N20 C2-10 C2-18 C2-20 MOSFET 11N80 Data sheet MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640

    IRFP 640

    Abstract: IRFP P CHANNEL IRFP
    Text: IRFP 250 Standard Power MOSFET VDSS = 200 V ID cont = 30 A Ω RDS(on) = 85 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF

    N-channel MOSFET to-247

    Abstract: NS 106 IRFP 530
    Text: Standard Power MOSFET IRFP 250 VDSS ID cont RDS(on) = 200 V = 30 A Ω = 85 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 200 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM


    Original     		PDF O-247 N-channel MOSFET to-247 NS 106 IRFP 530

    IRFP 640

    Abstract: IRFP264 IRFP P CHANNEL
    Text: IRFP 264 Standard Power MOSFET VDSS = 250 V ID cont = 38 A RDS(on) = 0.075 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 250 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF O-247 IRFP 640 IRFP264 IRFP P CHANNEL

    Untitled

    Abstract: No abstract text available
    Text: MegaMOSTMFET IRFP 360 VDSS = 400 V ID25 = 23 A RDS on = 0.20 Ω N-Channel Enhancement Mode Preliminary data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ 400 400 V V VGS VGSM Continuous Transient


    Original     		PDF ID100

    Untitled

    Abstract: No abstract text available
    Text: MegaMOSTM Power MOSFET IRFP 460 VDSS ID cont RDS(on) = 500 V = 20 A Ω = 0.27Ω N-Channel Enhancement Mode, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous


    Original     		PDF 125OC 100ms Figure10.

    IRFP 640

    Abstract: IRFP P CHANNEL IRFP P CHANNEL MOSFET IRFP 460 datasheet transistor irfp irfp 460 IRFP 125OC 23/IRFP 460
    Text: MegaMOSTM Power MOSFET IRFP 460 VDSS ID cont RDS(on) = 500 V = 20 A Ω = 0.27Ω N-Channel Enhancement Mode, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous


    Original     		PDF O-247 125OC 100ms Figure10. IRFP 640 IRFP P CHANNEL IRFP P CHANNEL MOSFET IRFP 460 datasheet transistor irfp irfp 460 IRFP 125OC 23/IRFP 460

    IRFP 640

    Abstract: No abstract text available
    Text: Standard Power MOSFET IRFP 260 VDSS = 200 V ID cont = 46 A RDS(on) = 55 mW N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 200 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF O-247 IRFP 640

    IRFP

    Abstract: No abstract text available
    Text: IRFP 470 VDSS MegaMOSTMFET ID cont RDS(on) = 500 V = 24 A = 0.23 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30


    Original     		PDF O-247 IRFP

    20nc50

    Abstract: IRFP 450 irfp
    Text: Standard Power MOSFET IRFP 450 VDSS ID cont RDS(on) = 500 V = 14 A = 0.40 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF O-247 20nc50 IRFP 450 irfp

    IRFP 260 M

    Abstract: 5n100 6n80 42n20 12N50A IRFP IXTN 36N50 C 67N10 irfp 240
    Text: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode Tjh = ► New IXTH IXTH IRFP IXTH IXTH IRFP IXTH IXTH IXTH IRFP IXTH IRFP IXTH ► IXTH IXTH IXTH ► IXTH ► IXTU ►IXTU IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH


    OCR Scan     		PDF 67N10 75N10 42N20 50N20 35N30 40N30 12N50A 21N50 24N50 30N50 IRFP 260 M 5n100 6n80 IRFP IXTN 36N50 C irfp 240

    11n80

    Abstract: ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80
    Text: Contents D V OSS max Tc = 2 5 “C Tc = 2 5 °C V A Q 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 200 30 0.085 IRFP 250 42 50 0.06 0.045 IXTH 42N20 IXTH 50N20 74 0.035 IXTH 68N20 85 0.025 23 0.14 IRFP 254 C2-20 38 0.075 IRFP 264 C2-22 35 40 0.1 0.085 0.088


    OCR Scan     		PDF O-247 O-251 O-204 O-264 15N60 20N60 15N70 01N80* 35N30 40N30 11n80 ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80

    transistor irfp 150

    Abstract: IRFP 150 transistor irfp IRFP P CHANNEL IRFP IRFP150 3421A transistor irfp IRFP-150
    Text: Æ 7 SGS-THOMSON ^ 7 £ . M ^G J M M <§§ IRFP 150/FI-151/FI IRFP 152/FI-153/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFP150 IRFP150FI IRFP151 IRFP151FI IRFP152 IRFP152FI IRFP153 IRFP153FI V DSS ^D S (o r 'd ' 100 100 60 60 100 100


    OCR Scan     		PDF 150/FI-151/FI 152/FI-153/FI IRFP150 IRFP150FI IRFP151 IRFP151FI IRFP152 IRFP152FI IRFP153 IRFP153FI transistor irfp 150 IRFP 150 transistor irfp IRFP P CHANNEL IRFP 3421A transistor irfp IRFP-150

    IRFP RE 40

    Abstract: IRFP P CHANNEL IRFP150 SGS Transistor
    Text: r= Z SGS-THOM SON ^ 7#» HDfgMilLlKgirMDlgi IRFP 150/F I-151/FI IRFP 152/F I-153/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^D S on IRFP150 IRFP150FI 100 V 100 V 0.055 fi 0.055 Q IRFP151 IRFP151 FI 60 V 60 V 0.055 0.055 IRFP152 IRFP152FI


    OCR Scan     		PDF 150/F I-151/FI 152/F I-153/FI IRFP150 IRFP150FI IRFP151 IRFP152 IRFP152FI IRFP RE 40 IRFP P CHANNEL SGS Transistor

    6N80

    Abstract: IXTN 36N50 C 40N160 40N140 ixtn 79n20 30N45 irfp 240 IXTK33N50 IXTN21N100 IRFP
    Text: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode t jm = 150°c ► New V p >D25 Tc = 25°C A DS on Tc = 25°C a 200 30 42 50 IRFP 254 250 ► IRFP 264 thJC K/W W 300 4 180 360 140 0.65 190 4600 285 400 220 0.42 300 360 max. max. max. 68


    OCR Scan     		PDF 67N10 75N10 42N20 50N20 68N20 35N30 40N30 30N45 12N50A 21N50 6N80 IXTN 36N50 C 40N160 40N140 ixtn 79n20 irfp 240 IXTK33N50 IXTN21N100 IRFP

    IRFP 450 application

    Abstract: IRFP P CHANNEL switching with IRFP450 schematic transistor irfp tr irfp450 IRFP453FI IRFP transistors irfp 150
    Text: r Z Z SGS-THOMSON ^7#» M tM IIL iO T * ! IRFP 450/FI-451/FI IRFP 452/FI-453/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS IRFP450 IRFP450FI 500 V 500 V 0.4 0.4 IRFP451 IRFP451FI 450 V 450 V 0.4 0.4 IRFP452 IRFP452FI 500 V 500 V 0.5 0.5


    OCR Scan     		PDF 450/FI-451/FI 452/FI-453/FI IRFP450 IRFP450FI IRFP451 IRFP451FI IRFP452 IRFP452FI IRFP453 IRFP453FI IRFP 450 application IRFP P CHANNEL switching with IRFP450 schematic transistor irfp tr irfp450 IRFP453FI IRFP transistors irfp 150

    IRFP 450 application

    Abstract: transistor irfp IRFP 450 SCHEMATIC WITH IRFP 450 IRFP450F irfp hi power power switching with IRFP450 schematic IRFP453FI irfp
    Text: F Z 7 S G S -T H O M S O N *7Æ» IRFP 450/FI-451/FI IRFP 452/FI-453/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS IRFP450 IRFP450FI IRFP451 IRFP451FI IRFP452 IRFP452FI IRFP453 IRFP453FI 500 500 450 450 500 500 450 450 V V V V V V V V ^DS<on


    OCR Scan     		PDF 450/FI-451/FI 452/FI-453/FI IRFP450 IRFP450FI IRFP451 IRFP451FI IRFP452 IRFP452FI IRFP453 IRFP453FI IRFP 450 application transistor irfp IRFP 450 SCHEMATIC WITH IRFP 450 IRFP450F irfp hi power power switching with IRFP450 schematic IRFP453FI irfp

    9D140

    Abstract: No abstract text available
    Text: IRFP 250 VDSS = 200 V ^D cont = 30 A Standard Power MOSFET R DS,on) = 85 m Q N-Channel Enhancement Mode Symbol Test Conditions V ¥ dss T j =25°C to150°C 200 V v T j = 25°Cto150°C; RGS= 1 Mi2 200 V < (/> >8 Continuous ¿20 V v Transient 130 V T c =25°C


    OCR Scan     		PDF to150 Cto150 O-247 9D140

    irfp

    Abstract: S5280
    Text: QIXYS m aialiailm alam a^ Standard Power MOSFET IRFP 264 VDSS = 250 V ^D cont = 38 A R Ds(on) = 0-075 Q N-Channel Enhancement Mode ?D 08 Symbol Test Conditions v DSS ^ vDGR Vos vGSM ^D25 U Maximum Ratings =25°C to150°C 250 V T,J = 25°C to 150°C; RrGS. = 1 M£2


    OCR Scan     		PDF O-247AD to150 O-247 irfp S5280

    Untitled

    Abstract: No abstract text available
    Text: nixYS_ Standard Power MOSFET IRFP 254 VDSS = 250 V ^D cont = 23 A ^D S (o n) = ^ N-Channel Enhancement Mode ?D 8 Symbol Test Conditions Maximum Ratings V DSS Tj = 25°Cto150°C 250 V V DGR Tj = 25° C to 150° C; RGS= 1 MC2 250 V Vos Continuous


    OCR Scan     		PDF Cto150 O-247

    Untitled

    Abstract: No abstract text available
    Text: iPIXYS MegaMOS FET IRFP 360 VDSS = 400 V = 23 A = 0.20 ß ^D25 R DS on N-Channel Enhancement Mode ?D G Preliminary data ¿s Maximum Ratings Symbol Test Conditions V Tj = 25°C to 150°C T j = 25°C to 1S0°C; Ros= 1.0 M£2 400 400 V V Continuous T ransient


    OCR Scan     		PDF O-247 C2-29

    Untitled

    Abstract: No abstract text available
    Text: H E 0 I 4055455 INTERNATIONAL □□□â?âQ □ | Data Sheet No. PD-9.586A RECTIFIER INTERNATIONAL RECTIFIER I « R T-39-15 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFP 3 6 0 IR FP 3 B2 N-CHANNEL Product Summary 400 Volt, 0.20 Ohm HEXFET


    OCR Scan     		PDF T-39-15 O-247AC C-535 IRFP360, IRFP362 SS452 Q0G07fl? C-536