IXFN100N10 Search Results

TO-238

Abstract: sn 8400
Contextual Info: I X Y S 1ÔE CORP OOOOtaSS D 5 'T - Z ° \ A S> □IXYS A D V A N C E TEC H N IC AL DATA SH EET* December 1988 DATA SH EET NO. 1300C HiPerFET Power MOSFETs IXFN100N10 N-Channel High dv/dt, Lowtrr, H D M O S™ Family FEATURES:_

TO-238

Abstract: vdo 007 dss100v IXFN100N10 HiperFET 013Q
Contextual Info: X X 1ÖE D Y S CORP 4fc>öb22fc. G O G G b a S S □IXYS ADVANCE TECHNICAL DATA SHEET* December 1988 DATA SHEET NO. 1300C HiPerFET Power MOSFETs IXFN100N10 N-Channel High dv/dt, Lowtrr, HDMOS™ Family FEATURES:_ 100A

Contextual Info: IXFN100N10 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)100 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300 Minimum Operating Temp (øC)

dioda by 238

Abstract: 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100
Contextual Info: I X Y S CORP IñE D • 4bflb22b 0000573 1 ■ HiPerFETs_ The HiPerFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling" rectifiers in a broad range of power switching

TL 650 ht

Abstract: mbab diode sy 166 ditti IXFH26N50 MKL series IXFN15N100 IXFMS0N20 IXFH12N100 IXFH5N100
Contextual Info: I X Y S CÔRP lûE D • 4bSL22b Q00Q573 1 ■ f JiPerFETs_ The HIPerFET family of Power MOSFETs Is designed to provide superior dv/dt performance while eliminating th e need for discrete, fast recoveiy “free wheeling" rccllfiers in a broad range of power switching

ne 22 mosfet

Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
Contextual Info: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)