IXGH40N120 Search Results

ixgh40n120c3

Abstract: g40n120 ixgh40n120 40n120
Contextual Info: Preliminary Technical Information GenX3TM 1200V IGBT VCES = IC110 = VCE sat ≤ tfi(typ) = IXGH40N120C3 High speed PT IGBTs for 20 - 50 kHz switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM 1200V 40A

IXGH40N120B2D1

Abstract: igbt ixgh40n120 rthjc igbt to247
Contextual Info: Product Detail Part Num: Description: Configuration: Package Style: Status: IXGH40N120B2D1 Mid-Frequency Range 15 kHz - 40 kHz , IGBT with freewheeling diode Copack (FRD) TO-247 Not for New Designs: Contact the factory for lead times (part is still available for purchase).

g40n120

Abstract: ixgh40n120
Contextual Info: Preliminary Technical Information GenX3TM C3-Class IGBT w/Diode VCES IC110 VCE sat tfi(typ) IXGH40N120C3D1 High Speed PT IGBT for 20 - 50 kHz Switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: High Voltage IGBTs w/Diode IXGH40N120B2D1 IXGT40N120B2D1 VCES = IC110 = VCE sat ≤ tfi(typ) = 1200V 40A 3.5V 140ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 1200 1200 V V VGES VGEM

g40n120

Abstract: 40n120 ixgh40n120 IXGT40N120B2D1 IXGH40N120B2D1 ixgh40n12 ixgh40n1 IF110 2VGE
Contextual Info: High Voltage IGBTs w/Diode IXGH40N120B2D1 IXGT40N120B2D1 VCES = IC110 = VCE sat ≤ tfi(typ) = 1200V 40A 3.5V 140ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 1200 1200 V V VGES VGEM

g40n120

Abstract: 40N120c3 IXGH40N120C3D1 ixgh40n120 40n120 IF110
Contextual Info: Preliminary Technical Information VCES IC110 VCE sat tfi(typ) IXGH40N120C3D1 GenX3TM C3-Class IGBT w/Diode High Speed PT IGBT for 20 - 50 kHz Switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

g40n120

Contextual Info: High Voltage IGBT with Diode IXGH40N120B2D1 IXGT40N120B2D1 VCES = 1200V IC110 = 40A VCE sat ≤ 3.5V tfi(typ) = 140ns Symbol Test Conditions VCES TC = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ± 20 V VGEM Transient

40N120c3

Contextual Info: Preliminary Technical Information GenX3TM 1200V IGBT VCES = IC110 = VCE sat ≤ tfi(typ) = IXGH40N120C3 High speed PT IGBTs for 20 - 50 kHz switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM 1200V 40A

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

high frequency inverter for induction heating

Abstract: solar inverter circuit ixgh30n120 transistor Electronic ballast "INDUCTION LAMP" induction heating circuits SMPS INVERTER FULL BRIDGE FOR WELDING Converter for Induction Heating igbt 1200V 20A igbt for HIGH POWER induction heating resonant converter for welding
Contextual Info: IXYSPOWER Efficiency Through Technology N E W P R O D U C T B R I E F 1200V GenX3 IGBTs next generation 1200V igbts for power conversion applications march 2009 OVERVIEW IXYS expands its GenX3TM insulated gate bipolar transistor IGBT portfolio to 1200