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    J 2N2894 Search Results

    J 2N2894 Datasheets (3)

    Thomson-CSF
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    J 2N2894
    		Thomson-CSF Condensed Data Book 1977 Scan PDF 21.92KB 1
    J2N2894
    		Thomson-CSF Condensed Data Book 1977 Scan PDF 21.92KB 1
    J.2N2894
    		Thomson-CSF Condensed Data Book 1977 Scan PDF 21.92KB 1

    J 2N2894 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan     		PDF

    2SA1402E

    Abstract: 2SC2224 2SA1371E
    Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 30 i:;:'''', .U(U 2SA1407E 2SA1407F 2N2894 KF3509 2N3209 2N3209L PZT3906 RXT3906 RXT3906 2SA1404D 2SA1404E 2SA1404F 2SA1541 2SA1476 2SA964 2SC2224 BFN19 ~~~J~A 35 40 2SA795 MJ373B 2N6424 MJ3739 2N6425


    Original     		2SA1407E 2SA1407F 2N2894 KF3509 2N3209 2N3209L PZT3906 RXT3906 2SA1404D 2SA1402E 2SC2224 2SA1371E PDF

    2N2894

    Abstract: 2N3209 g3105
    Contextual Info: 3DE j> b 53 ? QG3i i 3^ b m 7^ . / = 7 S G S -T H 0 M S 0 N ^7#JD i@iLi01T^ 2 [M]a(gi 2N2894 2N3209 s G S-THOMSON HIGH-SPEED SATURATED SWITCHES DESCRIPTION The 2N2894, and 2N3209 are silicon planar epi­ taxial PNP transistors in Jedec TO-18 metal case, Intended for high speed, low saturation switching


    OCR Scan     		2N2894 2N3209 2N2894, 2N3209 G-3105 2N2894-2N3209 D031142 S-4621 g3105 PDF

    2N4872

    Abstract: 2n5141 10N60N 2N3304 ESM2894 92AB LOW-POWER SILICON PNP 2SA1229 MM8T3640 MPS4258
    Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 ESM2894 2N5228 PN5140 2N5140 2N5141 MPS3639 2N3451 MPS4257 PN3639 2N3639 ~~:~~j~ 15 20 MM4257 MM4257 MM4257 2N3304 8SX94 2N4207 8SX35 MPSL07 ~S~~~~l 25 2SA1245 KT380V KT389V V(BR)CEO 30 35 2N5837


    Original     		ESM2894 2N5228 PN5140 2N5140 2N5141 MPS3639 2N3451 MPS4257 PN3639 2N3639 2N4872 10N60N 2N3304 92AB LOW-POWER SILICON PNP 2SA1229 MM8T3640 MPS4258 PDF

    2N9308

    Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
    Contextual Info: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5


    OCR Scan     		00DDS7Ã T-A7-01 2N497 12/3S 30/S9 2N3725A 2N3947 2N4080 2N4137 2N4207 2N9308 2N221BA 2N69S 2N3304 2M2193 2NI893 2N236S 2N408 2N238 PDF

    2N3055E specification

    Abstract: 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package
    Contextual Info: BS/CECC Type No. Polarity 2N 2906\ CV-0 PNP 2N2906A; PNP 1CV' ° 2N2907 1 f f j CV-0 PNP CV-0 PNP 2N2907A 2N2913y 1 50002-186 NPN Dual '2N3054 >2N3055 / ^2N3055E r rX2N3209 1 ^¿2N3209L / • ° 50004-042 50003-020 50004-XXX 50004-XXX 2N3347 2N3348 2N3349


    OCR Scan     		ai331 2N2906\ 2N2906A* 2N2907 2N2907A 2N2913y 2N2914\ 2N2915 2N2916 2N2917 2N3055E specification 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package PDF

    bcy5b

    Abstract: BCY591 BC179C BSX21 BC177C BCY581 2N708 2N718 2N718A 2N720
    Contextual Info: I— B PIN C O N FIG UR ATIO N 1. Emitter 2. Base 3. C ollector DIM MIN M AX A 5,24 5,84 B 4,52 4,97 C 4,31 5,33 D 0 ,40 0,53 E - 0,76 F - 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45D E G ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN


    OCR Scan     		45DEG Tas25Â 2N706A BCY79-9 BCY79-10 BFX37 CF103 bcy5b BCY591 BC179C BSX21 BC177C BCY581 2N708 2N718 2N718A 2N720 PDF

    2n2301

    Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
    Contextual Info: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74


    OCR Scan     		2N727 2N869A 2N929A 2N930' 2N930A 2N1572 2N1S73 2N1574 2N24S3 2N2484 2n2301 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815 PDF

    2n3072

    Contextual Info: ti CENTRAL SEM ICON DU CTOR : 1VÖVVOJ U CINI R A L D E I nû'î'JtiB ODDOSSG 3 T ¿ v n h an r t *j* 7 / «•* 6 i. ci r nono^zzo ~ O* StrtlCUN Ü UtTÜR V eb hFE at •c V V min max mA V 2N2800 2N2801 2N2837 2N2838 -2N2904 50 50 50 50 60 35 35 35 35


    OCR Scan     		2N2800 2N2801 2N2837 2N2838 -2N2904 2N2904A 2N2905 2N2905A 2N2906 2N2906A 2n3072 PDF

    N2905

    Abstract: N2907 N2905A 2N2219 transistor 2N2102 2N2218A 2N2219A 2N2221A 2N2904A 2N2906A
    Contextual Info: PNP SWITCHING T A B LE 4 SILICO N PLA N A R M EDIUM AN D HIGH SP E E D SW ITCH IN G T R A N S IS T O R S Type V c EO Max VcE sat at hFE f j Min at at Switching Times (M ax) at n 1 The devices shown in this table are characterised for general medium voltage, medium and


    OCR Scan     		ZT189 T0-18 2N4036 2N2102 2N2904A 4BCY79 BCY59 N2904 2N2218 N2905 N2907 N2905A 2N2219 transistor 2N2102 2N2218A 2N2219A 2N2221A 2N2906A PDF

    BCY79-9

    Abstract: bcy791 BcY591 BSX21 2N706 BC107C BC109C pin configuration 2N706A 2N718A 2N720
    Contextual Info: TO-18 h - B -h ! o PIN C O N F IG U R A T IO N 1. Em itter 2. B a s e 3. Co llector DIM MIN A 5 ,2 4 M AX 5 ,8 4 B 4 ,5 2 4 ,9 7 C 4,31 5 ,3 3 D 0 ,4 0 0 ,5 3 0 ,7 6 E - F - 1,27 G - 2 ,9 7 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45 D E G ALL DIMENSIONS ARE IN M.M.


    OCR Scan     		2N706 2N706A BCY79-9 BCY79-10 BFX37 CF103 23fl33cm 000135T BCY79-9 bcy791 BcY591 BSX21 BC107C BC109C pin configuration 2N718A 2N720 PDF

    2N2894

    Contextual Info: 30E ]> n T'ìs'ìea? e m a n a i b m , 2N2894 2N3209 f Z 7 SGS-THOMSON ^ 7 # M O M iy iû ï^ M O Û S S G S - TH O M S ON HIGH-SPEED SATURATED SWITCHES D E S C R IP T IO N The 2N2894, and 2N3209 are silicon planar epi­ taxial PNP transistors in Jedec TO-18 metal case,


    OCR Scan     		2N2894 2N3209 2N2894, 2N3209 2N2894-2N3209 2N2894 PDF

    PW 2N

    Abstract: 2N2894 2n320 2N3209
    Contextual Info: 2N2894 2N3209 HIGH-SPEED SATURATED SWITCHES DESCRIPTION The 2N2894, and 2N3209 are silicon planar epitaxial PNP transistors in Jedec TO-18 metal case, intended for high speed, low saturation switching applications up to 100 mA. Products approved to CECC 50004-022/023


    Original     		2N2894 2N3209 2N2894, 2N3209 PW 2N 2N2894 2n320 PDF

    2N3012

    Abstract: NS2N 2N3012M 2N2894
    Contextual Info: TYPES 2N2894, P-N-P SILICON TRANSISTORS B U L L E T I N NO. D L -S 645051, A U G U S T 1964 DESIGNED FOR HIGH-SPEED SWITCHING APPLICATIONS 0.5 v Max at 100 ma Guaranteed VC f » a t High f T 400 Me Min * m e ch a n ic a l d a ta C ollecto r-Base V o l t a g e . — 12 v


    OCR Scan     		2N2894, 2N3012 NS2N 2N3012M 2N2894 PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    IN733A

    Abstract: 2N551 IN768A 2N146 2N2405 2N339 2n3072 2N244 2N1234 2N1167
    Contextual Info: 666-001 N r lN N C ^ n 'O N N O V T ic v lO O O 'n'O 'O O 'O O O^t VTi^VTiO 0 r | 0 4 '4 ' 0 \0 ' 0 0 0 0 0 00 0 0 0 CN-NArHCMO 0 0 O 00 o cn-nacm cmcm < m< m cacacananananaooco o n o h h h cMH4 , 'A n N r < 4 - nano cn-no cmcacmcmcmcmcmcmcm canono oo ono cacano


    OCR Scan     		2N582 2N5828 2N5828A 2N5829 2N5830 2N5831 2N5832 2N5833 2N6000 2N6004 IN733A 2N551 IN768A 2N146 2N2405 2N339 2n3072 2N244 2N1234 2N1167 PDF

    C495 transistor

    Abstract: transistor c495 C735 c495 bc300 equivalent NPN C460 BFY50 equivalent u c756 2n-2411 2n1613 equivalent
    Contextual Info: 7 Metal Can High Current NPN Am plifiers Case Outlines Maximum ratinas Device Type ¡5 o £L BV Case BV BV hFEI CBO CEO EBO ICM mA V V V hFE2 1C Ic mA min. max. mA BFT39 BFT40 BFT41 NPN NPN NPN T039 T039 T039 90 70 60 80 60 50 5 5 5 1000 1000 1000 100 50 100 75


    OCR Scan     		BFT39 BFT40 BFT41 BFT29 BFT30 BFT31 BFY50 BFY51 BFY52 BFT53 C495 transistor transistor c495 C735 c495 bc300 equivalent NPN C460 BFY50 equivalent u c756 2n-2411 2n1613 equivalent PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF

    RSN 3306 H

    Abstract: ITT RZ2 g6 TDA 8841 IC rsn 3404 SN76670 4L71 bu 2508 af equivalent MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR sn76131 a1208 transistor
    Contextual Info: G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS O R D ER IN G INSTRUCTIO NS A N D M EC HA NICA L D ATA MACH IV PROCUREMENT SPECIFICATION L IN EA R CIRCUITS ECL CIRCUITS SERIES 54S/74S CIRCUITS


    OCR Scan     		54S/74S RSN 3306 H ITT RZ2 g6 TDA 8841 IC rsn 3404 SN76670 4L71 bu 2508 af equivalent MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR sn76131 a1208 transistor PDF

    SN72710L

    Abstract: MC1013P MC680P 796HC mc1235l MC838P MC814G MC1670L 723HC 741hm
    Contextual Info: 27-18 LH 0002 C LH 0002 CN 586-81! .587-270 AMPEX CURRENT A M PLIFIE R IN PUT 27-18 AMPEX REV 111 NH 0005C 586-495 D AC08CZ 587-896 27 + R ef | 1_ O PE R ATIO N AL A M PLIFIE R 8 BIT D -A CONVERTER 2" 14 13 12 11 6 5 4 1I i i i i i 3 1 13 , +12V So-4


    OCR Scan     		LH0002C LH0002CN NH0005C DAC08CZ NH0014C DH0034 78M12HC MMH0026CG 79M12AHC 75460BP SN72710L MC1013P MC680P 796HC mc1235l MC838P MC814G MC1670L 723HC 741hm PDF

    SN76670

    Abstract: sn76131 SNF10 The Integrated Circuits Catalog for Design Engineers SN76005 inverter welder schematic inverter LS600 sn76630 SN76660 sn76013
    Contextual Info: $4*-5 The Integrated Circuits Catalog for Design Engineers First Edition T e x a s In s t r u m e n t s INCORPORATED CC-401 10072-41-US Printed in U.S.A. G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS


    OCR Scan     		CC-401 10072-41-US 54S/74S 54H/74H 54L/74L TIH101 SN76670 sn76131 SNF10 The Integrated Circuits Catalog for Design Engineers SN76005 inverter welder schematic inverter LS600 sn76630 SN76660 sn76013 PDF

    74L47

    Abstract: a1208 transistor 74L03 sn76131 MC526L eh12a MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR tg321 PJ 909 inverter LS600
    Contextual Info: $4*-5 The Integrated Circuits Catalog for Design Engineers First Edition T e x a s In s t r u m e n t s INCORPORATED CC-401 10072-41-US Printed in U.S.A. G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS


    OCR Scan     		CC-401 10072-41-US 54S/74S 74L47 a1208 transistor 74L03 sn76131 MC526L eh12a MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR tg321 PJ 909 inverter LS600 PDF

    NPN pnp MATCHED PAIRS 2n2905A 2N2219A

    Abstract: BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62
    Contextual Info: Silect Polarity General Purpose Transistors — Ic up to 800 mA Case Outlines Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) TIS90 (1) TIS91 (1) PTOT Maximum ratings CEO V Cont IC A pk IC A Free Air @ 25‘C mW


    OCR Scan     		BS9365 2N4036 2N4037 BS3365 2N4030 2N4031 NPN pnp MATCHED PAIRS 2n2905A 2N2219A BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62 PDF

    2N2800

    Abstract: 2N2801 2N2837 2N2838 2N2904 2N2904A 2N2905 2N2905A 2N2906 2N2906A
    Contextual Info: ti CENTRAL SEM ICON DU CTOR : 1 V Ö VV OJ U CINI RAL D E I nû'î'JtiB ODDOSSG 3 T ¿ .ir n n ^ v n StrtlCUNÜUtTÜR an r * * / « •* VCE V eb hFE at •c V V V min max mA V 2N2800 2N2801 2N2837 2N2838 -2N2904 50 50 50 50 60 35 35 35 35 40 5 5 5 5 5


    OCR Scan     		2N2800 2N2801 2N2837 2N2838 -2N2904 2N2904A 2N2905 2N2905A CBR30 0000s23 2N2904 2N2906 2N2906A PDF