J175 FET Search Results

J174

Abstract: j175 j177 Philips TO-92 MARKING CODE J176 j177 model J174 AMO J176 AMO 43 marking
Contextual Info: Philips Semiconductors; J174; J175; J176; J177; P-channel silicon field-effect transistors Select your country Consumer Products Professional products Search Philips Semiconductors Home Product Information Information as of 2001-11-13 J174; J175; J176; J177; P-channel

EQUIVALENT FOR J175

Abstract: J175 EQUIVALENT FOR J174 J177 J176. P-CHANNEL. TO-92 J177 equivalent J174 equivalent J176 J174 EQUIVALENT FOR J176
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET J174; J175; J176; J177 P-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification J174; J175; J176; J177 P-channel silicon field-effect transistors

Contextual Info: J174 / J175 / J176 / J177 MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch Description This device is designed for low-level analog switching sample-and-hold circuits and chopper-stabilized amplifiers. Sourced from process 88. J174 / 175 / 176 / 177 1 MMBFJ175 / 176 / 177

J175

Abstract: J174 J176 J177
Contextual Info: Philips Components J174;J175 J176;J177 y v. P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical P-channel junction FETs in a plastic TO-92 envelope and intended for application w ith analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.

MMBFJ176 on semiconductor

Abstract: J175 MMBFJ176 6x marking sot-23 p-channel
Contextual Info: J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch Description This device is designed for low-level analog switching sample-and-hold circuits and chopper-stabilized amplifiers. Sourced from process 88. G S SOT-23 D Mark: 6W / 6X / 6Y TO-92 DG S

J174

Abstract: J177 J176 J175
Contextual Info: m bbS3*ì31 N AMER DOBMOtn 7DÖ « A P X PHILIPS/DISCRETE b ?E J174 TO 177 D P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel ju nction FETs in a plastic TO-92 envelope and intended fo r application w ith analog switches, choppers, commutators etc.

Contextual Info: bb53T31 DQ240CH 70S « A P X N AMER PHILIPS/DISCRETE J174 TO 177 b?E D J V P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended fo r application with analog switches, choppers, commutators etc.

Contextual Info: J174 TO 177 _/ V _ P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended fo r application w ith analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.

Bsv80

Abstract: 2N4092 2N4392 Philips J176 PMBF PMBFJ111 PMBFJ174
Contextual Info: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs JUNCTION FETS FOR SWITCHING OVERVIEW PRODUCT DATA: PAGES 39-40 leaded N/P TO-18 surface-mount TO-72 TO-92 SOT23 SOT 143 SOT223 N BSV78

J174

Abstract: J176 MPF970 j177 J175 j175 motorola
Contextual Info: J174 thru J177* C A SE 29-04, STYLE 30 TO-92 TO-226AA f MAXIMUM RATINGS Rating Sym bol Value Unit Drain-Source Voltage Vd S 30 Vdc Drain-Gate Voltage Vdg 30 Vdc Gate-Source Voltage VGS 30 Vdc Gate Current Total Device Dissip ation Derate above 2 5 ’C <a

PMBFJ174

Contextual Info: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs P-CHANNEL JUNCTION FETS FOR SWITCHING ratings type number characteristics - RD S o n ^ max. (Q) ± V DS -IG max. max. (mA) min. (mA)

bfw11 jfet

Abstract: jfet bfw10 Field Effect Transistors BFW12 BFW10 JFET BF256B BF964S BF96 BF964 BF960
Contextual Info: Small Signal Leaded Devices Field Effect Transistors J-FET cont. ±V DS •d s s -vh{P) GS Pkg (V) (mA) (V) T O -18 T O -18 T O -18 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-18 TO-18 TO-18 TO-72 TO-72 TO-72 TO-72

pn5114

Abstract: PN5432
Contextual Info: ,HARRIS SEMICOND SECTOR 4302271 QQ15bqa H M HAS 27E » T-33'ZS Switching Transistors Continued Junction FETs — N-Channel (Continued) PART NUMBER rDS(ON) n PACKAGE * Max vP V Min Max Iq ss pA Max BVqs S V Min •iHOFF) pA Max •dss mA Min Max *ap ns Max

70413080

Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
Contextual Info: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919

MMBFJ174

Abstract: MMBF5115 p1086 MMBFJ177
Contextual Info: h&E D • b 5 D 1 1 3 D □OB'lSDl TDS ■ NSC5 P Channel V p @ V DSlD Device R BVgss V Min (V) (V) Min Max m d S( oii ) (ß ) Min @ ID Ciss Crss ton toff (PF) Max (PF) Max (ns) Max (ns) Package Max (mA) 2N5018 30 10 -15 1000 75 1 45 10 35 65 TO-18(11 )

SD5400CY

Contextual Info: Temic S e m i c o n d u c t o r s # SOT23 40 <0^ T092 2 lead T092 (3 lead) T018 (2 lead) T018 (3 lead) DIP16 <0 S014 JFETs - P-Channel JFET Analog Switches Patt Number Breakdown Voltage Min (mA) VS T » Mis Max Min if*) Max 8h(mS> Typ 11 j 1 T yp typ Max

MMBFJ174

Abstract: P1087 MMBF5115 2N5019 J176 2N5018 2N5115 2N5116 J174 MMBF5114
Contextual Info: bflE D N ATL tSD1130 003^501 TDS • NSCS SE„ IC0N] JIS C r e t e ) P C hannel Vp@VDSlD RoS(on) ( a ) @ iD bvgss Device (V) (V) Min Min Ciss (PF) Max Crss (PF) Max ton (ns) Max toff (ns) Max Package (V) (nA) Min (mA) 10 -1 5 1000 75 1 45 10 35 65 T 0 -18(11)

e270 siliconix

Abstract: 2N3379 2N2844 InterFET MPF2609
Contextual Info: JUNCTION FET Item Number Part Number Manufacturer g. V BR GSS IDSS (V) (A) Min (S) Max 2.0m 2.2m 2.5m 4.5m 4.5m 4.5m 4.5m 4.5m 4.5m 5.0m 5.0m 5.0m 5.0m 5m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 6.0m 6.0m 6.0m 6.0m 6.0m 6.0m 1.4m 1.5m 1.0m

bss170

Abstract: BSS170F MJ174
Contextual Info: SOT23 SM ALL SIGNAL M O SFETS SO TFETs '• Pinout : 1-Drain, 2-Source, 3-Gate Type BV q s s V !d mA !dm A PD mW R DS(on) VGS><th) Min/Max at lD mA V £2 at Max •d mA V GS V 10 N-CHANNEL; ZVN3320F 200 60 1.0 330 1.0/3.0 1.0 25.0 100 BSS123 100 170 0.68

2N4360

Abstract: 2N3459 J411 fet Solitron 2N3821 U1898E 2N5906 TIS58 MEM511 2N3920 uc451
Contextual Info: //nlitrnn_ iFia@BOJ Tr ©A'um© mm M O R D E R IN G IN F O R M A T IO N Devices. Inc. l® FOtHL® ItM FO K gir The following is the product code index for J-FET and MOS FET DIE/WAFERS having 2N, 3N IEDEC prefixes. This product code index is Solitron San Diego’s standard for Q . A. production, marketing and sales.

transistor 2N3563

Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
Contextual Info: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .

ultra low igss pA mosfet

Abstract: ultra low igss pA j174 Transistor AND DIODE Equivalent list Ultra High Input Impedance N-Channel JFET Amplifier sd210 3n164 equivalent SST113 ULTRA LOW NOISE N-CHANNEL JFET 2N3958 equivalent
Contextual Info: J210, J211, J212 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems TO-92 Plastic FEATURES HIGH GAIN gfs = 7000µmho MINIMUM J211, J212 TO-92 D HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM G LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL

U402 N CHANNEL FET

Abstract: P-Channel Depletion Mode FET zener diode color codes glass zener diode color codes j201 jfet jfet n channel ultra low noise low noise p-channel fet dual fet q7 diode sg 71 jfet photo diode
Contextual Info: LS627 PHOTO FET LIGHT SENSITIVE JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR CRYSTALONICS FF627 FLAT GLASS TOP FOR EXTERNAL OPTICS ULTRA HIGH SENSITIVITY ABSOLUTE MAXIMUM RATINGS1 TO-72 BOTTOM VIEW @ 25 °C unless otherwise stated Maximum Temperatures

FET package TO-71

Abstract: SST271 2N4416A JANTX TO72 package n-channel jfet jfet 2N5198 3N164 BSS92 TP2020L VP0808L VP2020L
Contextual Info: Transistors Siliconix Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) Max (V) tON Max (ns) Ciss Typ (pF) ID Max (A) PD Max (W) –80 –100 –120 –200 –200 –200 –240 5 5 20 20 20 20 10 –4.5 –4.5 –2.4 –2.8 –2.5 –2.4 –2.5 55 55 25