K4S640832D Search Results

K4S640832D

Contextual Info: K4S640832D CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 May 1999 K4S640832D CMOS SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM

K4S640832D-TC75

Abstract: 16MX4 M390S0823DT1-C75 M390S1620DT1-C75
Contextual Info: SERIAL PRESENCE DETECT PC133 Registered DIMM Registered SDRAM PC133 DIMM 168pin SPD Specification REV. 0.1 Oct. 1999 REV. 0.1 Oct. '99 SERIAL PRESENCE DETECT PC133 Registered DIMM M390S0823DT1-C75 •Organization : 8MX72 •Composition : 8MX8 *9 •Used component part # : K4S640832D-TC75

M366S1623DT0

Abstract: M366S1623DT0-C75 K4S640832D-TC75
Contextual Info: M366S1623DT0 PC133 Unbuffered DIMM Revision History Revision 0.0 June, 1999 • PC133 first published. Revision 0.1 (May, 2000) • Changed tOH parameter from 2.7ns to 3.0ns Revision 0.2 (July, 2000) • Added PC100@CL3 data on DC Characteristics, Operating AC Parameter, AC Characteristics.

M374S1623DT0

Abstract: M374S1623DT0-C7A
Contextual Info: M374S1623DT0 PC133 Unbuffered DIMM Revision History Revision 0.0 July, 2000 • PC133 first published. REV. 0.0 July, 2000 M374S1623DT0 PC133 Unbuffered DIMM M374S1623DT0 SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

M374S1623ET0

Abstract: M374S1623ET0-C1L
Contextual Info: M374S1623ET0 PC100 Unbuffered DIMM M374S1623ET0 SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S1623ET0 is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

M366S0823DTS

Contextual Info: M366S0823DTS PC133 Unbuffered DIMM Revision History Revision 0.0 June, 1999 • PC133 first published. Revision 0.1 (May, 2000) • Changed tOH parameter from 2.7ns to 3.0ns Revision 0.2 (July, 2000) • Added PC100@CL3 data on DC Characteristics, Operating AC Parameter, AC Characteristics.

Contextual Info: SERIAL PRESENCE DETECT PC100 Unbuffered DIMM PC100 Unbuffered DIMM 168pin 4Layer SPD Specification(64Mb D-die base) Rev. 0.1 Jan. 2000 Rev 0.1 Jan. 2000 SERIAL PRESENCE DETECT PC100 Unbuffered DIMM M366S0424DTS-C80/C1H/C1L ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü

M366S0823ETS

Abstract: M366S0823ETS-C1L
Contextual Info: M366S0823ETS PC100 Unbuffered DIMM M366S0823ETS SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S0823ETS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

M366S1623DT0

Abstract: M366S1623DT0-C1H M366S1623DT0-C1L M366S1623DT0-C80
Contextual Info: M366S1623DT0 PC100 Unbuffered DIMM M366S1623DT0 SDRAM DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S1623DT0 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

M366S1623DT0

Abstract: M366S1623DT0-C7A K4S640832D-TC75
Contextual Info: M366S1623DT0 PC133 Unbuffered DIMM Revision History Revision 0.0 July, 2000 • PC133 first published. REV. 0.0 July, 2000 M366S1623DT0 PC133 Unbuffered DIMM M366S1623DT0 SDRAM DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

M374S1623DT0

Abstract: M374S1623DT0-C1H M374S1623DT0-C1L
Contextual Info: M374S1623DT0 PC100 Unbuffered DIMM M374S1623DT0 SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S1623DT0 is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

M366S0924CTS-C7A

Abstract: M366S1723CTS-C7A K4S640832D-TC75 M366S0823DTS-C7A M374S0823DTS-C7A K4S281632B-TC75
Contextual Info: PC133 Unbuffered DIMM SERIAL PRESENCE DETECT PC133 Single Sided Unbuffered SDRAM DIMM 168pin SPD Specification REV. 0 March. 2000 REV. 0 March. 2000 PC133 Unbuffered DIMM SERIAL PRESENCE DETECT M366S0424DTS-C7A(Intel SPD 1.2B ver. base) • Organization : 4Mx64

M374S0823DTS

Abstract: M374S0823DTS-C1H M374S0823DTS-C1L M374S0823DTS-C80
Contextual Info: M374S0823DTS PC100 Unbuffered DIMM M374S0823DTS SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S0823DTS is a 8M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: M466S0823DT3 PC66 SODIMM M466S0823DT3 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M466S0823DT3 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: M466S0823DT3 PC66 SODIMM M466S0823DT3 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M466S0823DT3 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

PC133 registered reference design

Contextual Info: M390S0823DT1 PC133 Registered DIMM Revision History Revision 0 June. 1999 • PC133 first published REV.0 June 1999 M390S0823DT1 PC133 Registered DIMM M390S0823DT1 SDRAM DIMM 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD

Contextual Info: M374S1623DT0 PC133 Unbuffered DIMM Revision History Revision 0.0 June, 1999 • PC133 first published. REV. 0 June 1999 M374S1623DT0 PC133 Unbuffered DIMM M374S1623DT0 SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

Contextual Info: M374S0823DTS PC133 Unbuffered DIMM Revision History Revision 0.0 June, 1999 • PC133 first published. REV. 0 June 1999 M374S0823DTS PC133 Unbuffered DIMM M374S0823DTS SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

Contextual Info: Rock2 DATA SHEET VERSION 1.1 2006-03-07 Rockchip Electronics 08/04/06 Rockchip Electronics 1 of 128 Rock2 DATA SHEET V1.1 1 Features — — — — — — — — — — — — — — — — — — — 128/100 pins LQFP package Typical power voltage 3.3V IO , 1.8V(Core)

K4S641632D-TL1L

Contextual Info: SERIAL PRESENCE DETECT PC66 SODIMM PC66 SODIMM 144pin SPD Specification (64Mb D-die base) Rev. 0.2 May 2000 Rev 0.2 May. 2000 SERIAL PRESENCE DETECT PC66 SODIMM M466S0424DT0-L10, C10 • Organization : 4Mx64 • Composition : 4Mx16 *4 • Used component part # : K4S641632D-TL10, TC10

M366S0823DTS-C7A

Abstract: M366S0823DTS
Contextual Info: M366S0823DTS PC133 Unbuffered DIMM Revision History Revision 0.0 July, 2000 • PC133 first published. REV. 0.0 July, 2000 M366S0823DTS PC133 Unbuffered DIMM M366S0823DTS SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

k4s641632d-tc80

Abstract: samsung date code sAMSUNG PC100-322-620
Contextual Info: SERIAL PRESENCE DETECT PC100 Unbuffered DIMM PC100 Unbuffered DIMM 168pin 6Layer SPD Specification(64Mb D-die base) Rev. 0.1 Jan 2000 Rev 0.1 Jan. 2000 SERIAL PRESENCE DETECT PC100 Unbuffered DIMM M366S0824DT0-C80/C1H/C1L ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü

K4S641632d-TC80

Abstract: samsung date code 64Mb samsung SDRAM
Contextual Info: SERIAL PRESENCE DETECT PC100 Unbuffered DIMM PC100 Unbuffered DIMM 168pin SPD Specification(64Mb D-die base) Rev. 0.1 Jan. 2000 Rev 0.1 Jan. 2000 SERIAL PRESENCE DETECT PC100 Unbuffered DIMM M366S0424DTS-C80/C1H/C1L • Organization : 4Mx64 • Composition : 4Mx16 *4

samsung date code

Abstract: 16MX4 K4S640832D-TC1H
Contextual Info: PC100 Registered DIMM SERIAL PRESENCE DETECT PC100 Registered DIMM 168pin Intel Type Rev1.2 SPD Specification(64Mb D-die base) Rev. 0.0 July 1999 Rev 0.0 July 1999 PC100 Registered DIMM SERIAL PRESENCE DETECT M377S0823DT3-C1H/C1L(1.2ver) • Organization : 8MX72