KA BAND GAAS FET PACKAGE Search Results

ka band gaas fet Package

Abstract: ka band power fet gaas fet micro-X Package GHZ micro-X Package power amplifier 4 ghz power amplifier power amplifier 5 ghz
Contextual Info: GaAs FETs and PHEMTs 3 9 Q. & Specifications Applications Package Part Number 21 dB Pi dB @ 18 GHz Medium Power Amplifier Chip Via AFM04P2-000 Low Noise/Medium Power MESFET 20 dB Pi dB @ 18 GHz Medium Power Amplifier Chip (Non-Via) AFM04P3-000 Low Noise/Medium

2SK241 Equivalent FET

Abstract: 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent 2SK161 equivalent gaas fet vhf uhf
Contextual Info: Super-Mini FET SOT-23MOD, SOT-143MOD F5/F6 Electrical Characteristics (Ta=25“C) Mark Equivalent other package Type No. 1.2MIN J 2SK30ATM 15TYP X 2SK117 7TYP Y 2SK192A 1.0-10 9TYP K 2SK161 1.5-14 10TYP T 2SK241 0.6-6.5 1.5MIN KA 2SK373 Application V d s x V ooo

TGA2519-SG

Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
Contextual Info: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m

MGF1601

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION OUTLINE DRAWING U n itm illim e te rs The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The

ka band lna

Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
Contextual Info: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: info-mmw@tqs.com Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for

MGF4919

Abstract: MGF4919G
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG OUTLINE DRAWING series super-low-noise HEMT(High U n it:m illim e te rs Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The

MGF4937

Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Contextual Info: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed

Contextual Info: Advance Product Information February 18, 2004 7 W Ka Band Packaged Power Amplifier TGA4915-EPU-CP Key Features and Performance • • • • • • • Frequency Range: 28 - 31 GHz 38 dBm Typical Psat @ Pin =21 dBm 22 dB Nominal Gain 15 dB Typical Return Loss

TGA4915-EPU-CP

Abstract: ka band power mmic
Contextual Info: Advance Product Information June 30, 2004 7 W Ka Band Packaged Power Amplifier TGA4915-EPU-CP Key Features and Performance • • • • • • • Frequency Range: 26 - 31 GHz 38 dBm Typical Psat @ Pin =21 dBm 22 dB Nominal Gain 15 dB Typical Return Loss

Contextual Info: TGA4510-SM Ka Band Compact Driver Amplifier Key Features • • • • • • Typical Frequency Range: 29-31 GHz 17 dBm Nominal Psat 15 dB Nominal Gain Bias Conditions: Vd = 6V, Id = 60 mA Compact 4 x 4 QFN with 20 leads Package Dimensions: 4.0 x 4.0 x 0.9 mm

Contextual Info: TGA4510-SM Ka Band Compact Driver Amplifier Key Features • • • • • • Typical Frequency Range: 29-31 GHz 17 dBm Nominal Psat 15 dB Nominal Gain Bias Conditions: Vd = 6V, Id = 60 mA Compact 4 x 4 QFN with 20 leads Package Dimensions: 4.0 x 4.0 x 0.9 mm

Contextual Info: TGA4510-SM Ka Band Compact Driver Amplifier Key Features • • • • • • Typical Frequency Range: 29-31 GHz 17 dBm Nominal Psat 15 dB Nominal Gain Bias Conditions: Vd = 6V, Id = 60 mA Compact 4 x 4 QFN with 20 leads Package Dimensions: 4.0 x 4.0 x 0.9 mm

Contextual Info: TGA4510-SM Ka Band Compact Driver Amplifier Key Features • • • • • • Typical Frequency Range: 29-31 GHz 17 dBm Nominal Psat 15 dB Nominal Gain Bias Conditions: Vd = 6V, Id = 60 mA Compact 4 x 4 QFN with 20 leads Package Dimensions: 4.0 x 4.0 x 0.9 mm

RO4003

Abstract: 2931 5v
Contextual Info: TGA4510-SM Ka Band Compact Driver Amplifier Key Features • • • • • • Typical Frequency Range: 29-31 GHz 17 dBm Nominal Psat 15 dB Nominal Gain Bias Conditions: Vd = 6V, Id = 60 mA Compact 4 x 4 QFN with 20 leads Package Dimensions: 4.0 x 4.0 x 0.9 mm

Contextual Info: TGA4905-CP 4 Watt Ka Band Packaged Amplifier Key Features and Performance • • • • • 36 dBm VSAT band Psat 22 dB Nominal Gain 25 - 31 GHz Frequency Range 0.25µm pHEMT Technology Bias Conditions: 6 V, 2.1 A Quiescent up to 4 A under RF drive Package Dimensions:

VMMK-2303

Abstract: VMMK-2503 microwave propagation VMMK-2203 VMMK-2403 ka band gaas fet Package E-band mmic ka band lna VMMK-2103 VMMK-2x03
Contextual Info: GaAs-Based Surface Mount Wafer Scale Package MMICs for DC to 45 GHz Applications White Paper By: Henrik Morkner I. Introduction Packaging has always been the “Achilles Heal” of extracting the maximum microwave performance out of any IC technology. The inherent parasitic capacitance and inductance associated with bond wires, lead frames, and

x-band microwave fet

Abstract: x-band mmic lna MMIC X-band amplifier x-band limiter GAAS FET AMPLIFIER x-band 10w microwave transceiver X band 5-bit phase shifter MMIC s-band X-band GaAs pHEMT MMIC Chip x-band power transistor
Contextual Info: GaAs MMIC PROCESSES ENABLE MULTI-FUNCTION INTEGRATION, INCREASING RELIABILITY WHILE REDUCING CHIP SIZE AND COST By Dr. Edward L. Griffin and D. Gary Lerude Aerospace & Defense ICs M/A-COM, a Tyco Electronics Company Introduction After some 20+ years of DoD technology development, the commercial wireless market has

AV02-0626EN

Abstract: Avago Mounted Amplifiers ka-band bare ka band gaas fet Package Ka-band 1A12 30SPA0536 8A10 2.4ghz 4w 32A16
Contextual Info: Ka-band 2W/4W MMIC Power Amplifiers in 7x7mm Low-cost SMT Package By Kohei Fujii and Henrik Morkner White Paper Abstract Power Amplifier Design The development of PHEMT, 24 to 31GHz 2W/4W power amplifier MMICs are described. The amplifier was designed with highly integrated distributed line-based

x-band power transistor

Abstract: x-band microwave fet MMIC X-band amplifier x-band mmic lna GAAS FET AMPLIFIER x-band 10w microwave transceiver X-band GaAs pHEMT MMIC Chip X band 5-bit phase shifter x-band mmic x-band limiter
Contextual Info: MAY 2000 GaAs MMIC Processes Enable Multi-Function Integration, Increasing Reliability While Reducing Chip Size and Cost by Dr. Edward L. Griffin and D. Gary Lerude, Aerospace & Defense ICs, M/A-COM, a Tyco Electronics Company Introduction After more than 20 years of DoD technology development, the exploding

ka band high power fet amplifier schematic

Abstract: DM6030HK TGA4905-CP ka band power mmic
Contextual Info: Advance Product Information February 7, 2006 4 Watt Ka Band Packaged Amplifier TGA4905-CP Key Features and Performance • • • • • • 36 dBm VSAT band Psat 22 dB Nominal Gain 25 - 31 GHz Frequency Range 0.25µm pHEMT Technology Bias Conditions: 6 V, 2.1 A Quiescent

TGA4901-EPU-CP

Contextual Info: Advance Product Information March 21, 2003 3 Watt Ka Band Packaged Amplifier TGA4901-EPU-CP Key Features and Performance • • • • • • • • Preliminary Measured Performance Bias Conditions: Vd=6V Idq=2.2A Primary Applications TGA4901 S-Parameters

Contextual Info: NEC UPG107B UPG107P S-BAND SPDT MMIC SWITCH OUTLINE DIMENSIONS DESCRIPTION Units in mm OUTLINE BF08 UPG107B is an S-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for radar application. The device can operate from DC to 3.4 GHz. It Is housed in an

TGA4902-SM

Contextual Info: TGA4902-SM Ka Band Packaged MPA Key Features • • • • • Typical Frequency Range: 25 - 35 GHz 25 dBm Nominal P1dB 18 dB Nominal Gain Bias 6 V, 220 mA Package Dimensions: 4.0 x 4.0 x 0.9 mm Primary Applications • • • Ka-Band VSAT Point-to-Point Radio

Contextual Info: TGA4902-SM Ka Band Packaged MPA Key Features • • • • • Typical Frequency Range: 25 - 35 GHz 25 dBm Nominal P1dB 18 dB Nominal Gain Bias 6 V, 220 mA Package Dimensions: 4.0 x 4.0 x 0.9 mm Primary Applications • • • Ka-Band VSAT Point-to-Point Radio