KM23V Search Results

KM23V8100D

Abstract: KM23V8100DET KM23V8100DT
Contextual Info: CM OS M ASK ROM KM23V81 OOD E T 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES G ENERAL DESCRIPTION • S w itc h a b le o rg a n iz a tio n 1 ,0 4 8 ,5 7 6 x 8 (b y te m o d e ) 5 2 4 ,2 8 8 x 16 (w ord m o de) • F a st a c c e s s tim e : 3 .3 V o p e ra tio n : 1 0 0 n s (M a x .)

mask rom

Contextual Info: KM23V32005D E TY/KM23S32005D(E)TY CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time/Page Access Time 3.3V/3.0V Operation : 100/30ns(Max.)

Contextual Info: KM23V32000D E TY/KM23S32000D(E)TY CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time 3.3V/3.0V Operation : 100ns(Max.)

Contextual Info: KM23V64205ASG CMOS MASK ROM 64M-Bit 4Mx16 /2Mx32 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 16(word mode) 2,097,152 x 32(double word mode) • Fast access time Random Access/Page Access 3.3V Operation : 100/30ns(Max.)

Contextual Info: KM23V64000G CMOS MASK ROM 64M-Bit 8Mx8 /4Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access time 3.3V Operation : 120ns(Max.) 3.0V Operation : 150ns(Max.) • Supply voltage : single +3.0V/ single +3.3V

Contextual Info: KM23V4100D E T CMOS MASK ROM 4M-Bit (512Kx8 /256x16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V

Contextual Info: KM23V16205DSG CMOS MASK ROM 16M-Bit 1Mx16 /512Kx32 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 16(word mode) 524,288 x 32(double word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) 4 double Words / 8 Words page access

Contextual Info: KM23V8105D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Random access time/Page Access Time 3.3V Operation : 100/30ns(Max.) 3.0V Operation : 120/40ns(Max.)

Contextual Info: Advance Information KM23V16205BSG CMOS MASK ROM 16M-Bit 1 Mx16 /512Kx32 CMOS MASK ROM GENERAL DESCRIPTION FEATURES S w itch a b le organ izatio n 1,408,576 x 16(w ord m ode) 524,288 x 32 (d o u b le w o rd m ode) Fast acce ss tim e Random A ccess : 100ns(m ax.)

Contextual Info: Advance Information CMOS MASK ROM KM23V16005BG 16M-Bit 2Mx8 /1Mx16 CMOS MASK ROM GENERAL DESCRIPTION FEATURES S w itch a b le organ izatio n 2,0 97,15 2 x 8 (b yte m ode) 1,048,576 x 1 6(w ord m ode) Fast acce ss tim e Random A ccess : 100ns(m ax.) Page A ccess

Contextual Info: Preliminary KM23V32000C E T CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time 3.3V Operation : 120ns(Max.) 3.0V Operation : 150ns(Max.)

Contextual Info: Advance Information CMOS MASK ROM KM23V64000G 64M-Bit 8Mx8 /4Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access time 3.3V Operation : 120ns(Max.) 3.0V Operation : 150ns(Max.)

Contextual Info: SA M S UN G E L E C T R O N I C S INC 7 cl b 4 m E h?E D 0D],7D3a 350 PRELIMINARY KM23V8000B G CMOS MASK ROM 8M-Bit (1M x8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 1,048,576 x 8 bit organization • Fast access tim e: 150ns(max.) • Supply voltage: single+3V or +3.3V

Contextual Info: KM23V4100D G CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION » Switchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation: 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V

42-DIP-6Q0

Contextual Info: KM23V8100D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CM O S M ASK ROM FEATURES GENERAL DESCRIPTION • Swltchable organization 1,048,576 x 8(byta mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation: 1Q0ns(Max.) 3.0V operation: 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V

Contextual Info: Preliminary CMOS MASK ROM KM23V16205DSG 16M-B»t 1Mx16 /512KX32 CMOS MASK ROM FEATURES G E N E R A L D E S C R IP T IO N • Switchable organization 1,048,576 x 16(word mode) 524,288 x 32(double word mode) • Fast access time Random Access : 100ns(Max.)

Contextual Info: PRELIMINARY KM23V16101A CMOS MASK ROM 16M-Bit 2M x8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152 X 8 bit organization • Fast access tim e: 200ns max.) • Supply voltage: single+3V or +3.3V • Current consumption Operating: 25 mA(max.) at VCC=3.0V± 0.3

Contextual Info: Preliminary KM23V32000B E TY/KM23S32000B(E)TY CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM GENERAL DESCRIPTION FEATURES S w itch ab le organ izatio n 4 ,1 9 4 ,3 0 4 x 8(b yte m ode) 2,0 97,152 x 16(w ord m ode) Fast access tim e Random A ccess T im e

Contextual Info: KM23V800QD G CMOS MASK ROM 8M-Bit (1Mx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION . 1,048,576 x 8 bit organization . Fast access time 3.3V Operation : 100ns(max.) 3.0V Operation : 120ns(max.) . Supply voltage : 2.7V to 3.6V . Current consumption Operating : 30/25mA(max.)

KM23V4100C

Abstract: KM-23V4100CG
Contextual Info: KM23V4100C G/T ci cr*1 ELECTRONICS CMOS Mask ROM 4M-Bit (512K X 8/256K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 524,288 x 8 (byte mode) 262,144 x 16(word mode) • Supply voltage : 2.7V to 3.6V • Fast access time 3.0V Operation: 150ns(max.)

Contextual Info: KM23V32000CG CMOS MASK ROM 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304xB(byte mode) 2,097,152x16(word mode) • Fast access time 3.3V Operation: 120ns(Max.) 3.0V Operation: l50ns(Max.) • Supply voltage : single +3.0V/ single +3.3V

A18T

Abstract: 23V8100DG
Contextual Info: KM23V8100D G CMOS MASK ROM 8M-Bit (1Mx8 512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 3.3V operation : 100ns(M ax.) 3.0V operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V

KM23C16005AG

Abstract: 44TSOP2 44-TSOP2
Contextual Info: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE Density Power Supply 4M bit 5V±10% Part Number KM23C4000C G KM23C4100C(G/T) 8M bit 5V±10% 5V±10% 3.3V-0.3V 5Vt1C% 3 2M bit 3.3V+0.3V , 100 . Extended 512Kx8/256Kx16 100 - 150 KM23V41OOCET 512Kx 8 512Kx8/256Kx16

23v4000

Abstract: M5EV
Contextual Info: KM23V4000D £ TY7KM23S4000D(E)TY CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES G E N ER A L DESCRIPTION • 524,288 x 8 bit organization • Fast access time 3.3V O peration: 100ns(Max.) 3.0V O peration: 120ns(Max.) 2.5V O peration: 250n$(Max.) • Supply voltage