KM416S4020 Search Results

Contextual Info: KM416S4020B CMOS SDRAM Revision History Revision .1 November 1997 - t RDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .2 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.

KM416S4020

Contextual Info: KM416S4020B CMOS SDRAM 2M x 16Bitx 2 Banks Synchronous DRAM GENERAL DESCRIPTION FEATURES The KM416S4020A is 67,108,864 bits synchronous high data • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Dual banks operation rate Dynamic RAM organized as 2 x 2,097,152 words by 16

Contextual Info: KM416S4020B CMOS SDRAM Revision History Revision .1 November 1997 - t RDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .2 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.

KM416S4020B

Contextual Info: KM416S4020B CMOS SDRAM R evision H istory Revision .1 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .2 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.

KM416S4020

Abstract: KM416S4020AT-G
Contextual Info: KM416S4020AT SDRAM ELECTRONICS 2M x 16Bitx 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.

KM416S4020AT-G

Abstract: XC5L a9333
Contextual Info: KM416S4020A CMOS SDRAM 2M X 16Bitx 2 Banks Synchronous DRAM FEATURES . . . . . . GENERAL DESCRIPTION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 2 & 3

Contextual Info: NEW JEDEC SDRAM MODULE KMM466S804AT KMM466S804AT SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S804AT is a 8M bit x 64 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung

Contextual Info: KMM366S804BTL PC66 SDRAM MODULE KMM366S804BTL SDRAM DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S804BTL is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

U07K

Abstract: 741i REF04 KM416S4020AT-12
Contextual Info: K M 4 16 S 4 0 2 1 A T SDRAM ELECTRONICS 2M x 16Bitx 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.

KMM366S404AT

Abstract: circuit diagram for auto on off
Contextual Info: KMM366S404AT NEW JEDEC SDRAM MODULE KMM366S404AT SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S404AT is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

TSOP54

Abstract: tsop-54 MA3.1 DMD20
Contextual Info: 1 2 VCC3 3 4 5 6 7 8 MEM_VCC3 JP43 1 2 MEM_VCC3 JP_SMT4_DFS C160 10U 1210 JP45 1 2 JP_SMT4_DFS C127 0.1U 0603B ON BOARD SDRAM 0 32 MB C140 0.1U 0603B C139 0.1U 0603B C141 0.1U 0603B C156 0.1U 0603B C171 0.1U 0603B C155 0.1U 0603B C170 0.1U 0603B JP46 1 A

KM416S4020

Abstract: KM416S4020BT-G10
Contextual Info: KMM366S804BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.

km48s2020ct

Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
Contextual Info: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks

schematic circuit adsl router part list

Abstract: 29e010 78R05 KS32C50100 SNDS100 78R33 MAX232 CPE 29e010 datasheet c-mac stp samsung ribbon
Contextual Info: Excellence in Low-Power The way MICOM/DSP should be KS32C5000 A /KS32C50100 32-bit RISC Microcontroller for Network Solution Mar. 1999 ELECTRONICS Contents n n n Network Protocol n What is Network ? n OSI Reference Model and TCP/IP n TCP/IP Networking Software & Basic Protocol

Contextual Info: NEW JEDEC SDRAM MODULE KMM466S804AT2 KMM466S804AT2 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S804AT2 is a 8M bit x 64 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung

KMM366S424BTL-G0

Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
Contextual Info: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .

37L34

Abstract: KMM466S404AT-F0
Contextual Info: NEW JEDEC SDRAM MODULE KMM466S404AT KMM466S404AT SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S404AT is a 4M bit x 64 Synchronous - Performance range Max Freq. Speed

Contextual Info: KMM366S404BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200mV.

Contextual Info: KMM366S404BTL PC66 SDRAM MODULE KMM366S404BTL SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S404BTL is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung