KM416S4020A Search Results
KM416S4020A Price and Stock
Samsung Electro-Mechanics KM416S4020AT-F10 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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KM416S4020AT-F10 | 6 |
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KM416S4020A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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KM416S4020Contextual Info: KM416S4020B CMOS SDRAM 2M x 16Bitx 2 Banks Synchronous DRAM GENERAL DESCRIPTION FEATURES The KM416S4020A is 67,108,864 bits synchronous high data • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Dual banks operation rate Dynamic RAM organized as 2 x 2,097,152 words by 16 |
OCR Scan |
KM416S4020B 16Bitx KM416S4020BT-G/F8 KM416S402OBT-G/FH KM416S4020BT-G/FL KM416S4020BT-G/F10 KM416S4020A 10/AP KM416S4020 | |
KM416S4020
Abstract: KM416S4020AT-G
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OCR Scan |
KM416S4020AT 16Bitx KM416S4020A/KM416S4021A KM416S4020AT) 0D33D5S KM416S4020 KM416S4020AT-G | |
KM416S4020AT-G
Abstract: XC5L a9333
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OCR Scan |
KM416S4020A 16Bitx KM416S4020A 10/AP D037221 KM416S4020AT-G XC5L a9333 | |
Contextual Info: NEW JEDEC SDRAM MODULE KMM466S804AT KMM466S804AT SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S804AT is a 8M bit x 64 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung |
OCR Scan |
KMM466S804AT KMM466S804AT 8Mx64 4Mx16, 400mil 144-pin | |
Contextual Info: KM416S4020B CMOS SDRAM Revision History Revision .1 November 1997 - t RDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .2 (February 1998) - Input leakage Currents (Inputs / DQ) are changed. |
Original |
KM416S4020B PC100 | |
U07K
Abstract: 741i REF04 KM416S4020AT-12
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OCR Scan |
16Bitx KM416S4020A/KM416S4021A 416S4021AT) 7Tb4142 U07K 741i REF04 KM416S4020AT-12 | |
KMM366S404AT
Abstract: circuit diagram for auto on off
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OCR Scan |
KMM366S404AT KMM366S404AT 4Mx64 4Mx16, 400mil 168-pin circuit diagram for auto on off | |
TSOP54
Abstract: tsop-54 MA3.1 DMD20
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Original |
100MHZ 16bit 0603B 0603B TSOP54 tsop-54 MA3.1 DMD20 | |
Contextual Info: KM416S4020B CMOS SDRAM Revision History Revision .1 November 1997 - t RDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .2 (February 1998) - Input leakage Currents (Inputs / DQ) are changed. |
Original |
KM416S4020B PC100 | |
KM416S4020BContextual Info: KM416S4020B CMOS SDRAM R evision H istory Revision .1 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .2 (February 1998) - Input leakage Currents (Inputs / DQ) are changed. |
OCR Scan |
KM416S4020B PC100 10/AP KM416S4020B | |
q37sContextual Info: NEW JEDEC SDRAM MODULE KMM366S804AT KMM366S804AT SDRAM DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S8Q4AT is a 8M bit x 64 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung |
OCR Scan |
KMM366S804AT KMM366S804AT 8Mx64 4Mx16, KMM366S8Q4AT 400mil 168-pin q37s | |
Contextual Info: NEW JEDEC SDRAM MODULE KMM466S804AT2 KMM466S804AT2 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S804AT2 is a 8M bit x 64 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung |
OCR Scan |
KMM466S804AT2 KMM466S804AT2 8Mx64 4Mx16, KMM466S804AT2-F8 KMM466S804AT2-F0 KMM466S804AT2-F2 400mil | |
37L34
Abstract: KMM466S404AT-F0
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OCR Scan |
KMM466S404AT KMM466S404AT 4Mx64 4Mx16, 400mil 144-pin 37L34 KMM466S404AT-F0 |