KM416V254 Search Results

km416c254b

Contextual Info: CMOS DRAM KM416C254B, KM416V254B 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,

rbbb

Contextual Info: KM416V254DJ ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,

e5as

Contextual Info: KM416C254D, KM416V254D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or + 3.3V , Access time (-5,-6 or -7), power consumption(Normal or

1dq10

Contextual Info: KM416C254B, KM416V254B CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,

Contextual Info: KM416C254D, KM416V254D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , Access time (-5,-6 or -7), power consumption(Normal or

RA5E

Abstract: 100 CJB equivalent D0232
Contextual Info: KM416C254D, KM416V254D CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,

C254D

Abstract: cmos dram NCC KMQ
Contextual Info: KM416V254DJ ELECTRONICS CMOS D R A M 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,

km416c254

Contextual Info: MEMORY ICs FUNCTION GUIDE P o w er D ensity' 4M B/W 256KX16 5V±10% KM416C256B# 50/60/70 Fast Page KM416C256BL# J:40 Pin SOJ T:40 Pin TSOP-ll Forward KM416C254S# EDO KM416C254BL# 3.3V±0.3V KM416V256B# 60/70/80 Fast Page KM416V25SBL# KM416V254B# EDO KM416V254BL#

AD 553 LH

Abstract: LH 531 G 24
Contextual Info: CMOS DRAM KM416V254B/BL/BLL 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out GENERAL DESCRIPTION FEATURES • Performance range: tR A C tC A C tR C tH P C KM416V254B/BL/BLL-6 60ns 17ns 110ns 24ns KM416V254B/BL/BLL-7 70ns 20ns 130ns 29ns KM416V254B/BL/BLL-8

C254D

Abstract: KM416C254D KM416V254D km416v254 KM416C254
Contextual Info: KM416C254D, KM416V254D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , Access time (-5,-6 or -7), power consumption(Normal or

Contextual Info: KM416V254B/BL/BLL CMOS DRAM 256K x 1 6 Bit CM OS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tR C tH P C KM416V254B/BL/BLL-6 60ns 17ns 110ns 24ns KM416V254B/BL/BLL-7 70ns 20ns 130ns 29ns KM416V254B/BL7BLL-8

Contextual Info: KM416C254B, KM416V254B CMOS DRAM 256K x 16 Bit CM OS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fa m ily o f 262 ,1 4 4 x 16 bit E xtended Data O ut C M O S D R A M s. E xtended D ata O u t o ffe rs high speed ran d o m a cce ss of m em o ry ce lls w ith in th e sam e row. P o w e r su p p ly vo lta g e +5 .0 V o r + 3.3V ,

Contextual Info: KM416V254DT-L6T 1/2 IL08 4 M (256 K x 16)-BIT DRAM WITH EXTENDED DATA OUT —TOP VIEW— VCC 1 40 GND DQ0 I/O 2 39 DQ15 I/O DQ1 I/O 3 38 DQ14 I/O DQ2 I/O 4 37 DQ13 I/O DQ3 I/O 5 36 DQ12 I/O VCC 6 35 GND DQ4 I/O 7 34 DQ11 I/O DQ5 I/O 8 33 DQ10 I/O DQ6 I/O 9

C254D

Contextual Info: KM416V254DT ELECTRONICS CMOS DR AM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,

Contextual Info: KM416C254B, KM416V254B CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,

C254D

Abstract: KM416C
Contextual Info: KM416C254D, KM416V254D CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V .

C254D

Abstract: KM416C254D
Contextual Info: KM416C254D/DL, KM416V254D/DL CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , Access time (-5,-6 or -7), power consumption(Normal or

Contextual Info: KM416C256D, KM416V256D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time (-5,-6,-7), power consumption(Normal or Low power) and

4MB DRAM

Abstract: 4MX16 1MX16
Contextual Info: TABLE OF CONTENTS I. GENERAL INFORMATION 1. Introduction . 11 2. Product Guide . 17 3. Ordering information . .

KM44C4000aS 6

Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM 4 M b it 4Mx1 1Mx4 KM41C4000C-6 KM41C4000C-7 " KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7 KM41C4000CL-8 - KM41C4002C-5 KM41C4002C-6 KM41C4002C-7 KM41C4002C-8 - KM41V4000C-6 KM41V4000C-7 KM41V4000C-8 - KM41V4000CL-6

Contextual Info: TABLE OF CONTENTS I. PRODUCT GUIDE 1. Introduction. 11 2. Product G u id e . 18 3. DRAM Ordering System. 23

am29f010b-70ef

Abstract: A29010-70F AM29F040B-55JF AM29F040B-90jf Pm25LV512A am29f800bb-70ef S29AL004D55TFI02 AM29F040B-90JI AM29F010B70JF tc55257 cross reference
Contextual Info: Cross Reference Memory IC's and More www.amictechnology.com part number AMIC part number µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B A29F002 AM29F002B AM29F002BB-120JF AM29F002BB-55JD AM29F002BB-90EI

23C1001

Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5

KM44C4105C-6

Abstract: KM44C16004
Contextual Info: General Information CMOS DRAM 1. introduction 4Mbit 4Mx1 KM41C4000D-5 - KM41C4000D-6 - KM41C4000D-7 KM41C4000D-L5 1Mx4 KM41C4000D-L6 KM41C4000D-L7 KM41V4000D-6 KM41V4000D-7 KM41V4000D-L6 KM41V4000D-L7 KM44C1000D-5 - KM44C1000D-6 - KM44C1000D-7 KM44C1000D-L5 - KM44C1000D-L6 - KM44C1000D-L7