KM416V4104BS Search Results

Contextual Info: DRAM MODULE KMM466F404BS2-L 4Mx64 SODIMM 4Mx16 base Revision 0.0 Dec. 1997 ELECTRONICS DRAM MODULE KMM466F404BS2-L Revision History Version 0.0 (Dec. 1997) • R e m o v e d tw o AC p a ra m e te rs t c a c p (a c c e s s tim e fro m CAS) a n d tA A P (a cce ss tim e fro m co l. a d d r.) in A C CHARACTERISTICS.

KMM372F804BS

Contextual Info: KMM372F804BS DRAM MODULE KMM372F804BS EDO Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F804B consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in

KMM372F404BS

Contextual Info: KMM372F404BS DRAM MODULE KMM372F404BS EDO Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F404B is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F404B consists of four 4Mx16bits & two 4Mx4bits CMOS DRAMs in

Contextual Info: DRAM MODULE KMM332F404BS/BZ-L 4Mx32 SODIMM 4Mx16 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332F404BS/BZ-L Revision History Version 0.0 (Sept, 1997) Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.

Contextual Info: DRAM MODULE KMM366F40 8 4BS1 Unbuffered 4Mx64 DIMM (4Mx16 base) Revision 0.0 Dec. 1997 DRAM MODULE KMM366F40(8)4BS1 Revision History Version 0.0 (Dec. 1997) R e m o v e d tw o AC p a ra m e te rs t c a c p (a c c e s s tim e fro m CAS) a n d tA A P (a cce ss tim e fro m co l. a d d r.) in A C CHARACTERISTICS.

KMM366F404BS1

Contextual Info: DRAM MODULE KMM366F40 8 4BS1 KMM366F40(8)4BS1 EDO Mode without buffer 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40(8)4BS1 is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F40(8)4BS1 consists of four CMOS 4Mx16bits

4MX16

Abstract: KM416V4104BS
Contextual Info: DRAM MODULE KMM332F804BS/BZ-L 8Mx32 SODIMM 4Mx16 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332F804BS/BZ-L Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP (access time from CAS) and t AAP (access time from col. addr.) in AC CHARACTERISTICS.

4MX16

Contextual Info: DRAM MODULE KMM332F404BS/BZ-L 4Mx32 SODIMM 4Mx16 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332F404BS/BZ-L Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP (access time from CAS) and t AAP (access time from col. addr.) in AC CHARACTERISTICS.

24C02N

Contextual Info: UG44W6446HSG Revision History Mar 04 , 1999 Rev - B Oct 30 , 1998 Rev - A Added More Detailed Dimension Information Of PCB , Full Data sheet Changed to new format. Data sheet released. 45388 Warm Springs Blvd. Fremont, CA. 94539 Tel: 510 668-2088 Fax: (510) 661-2788

Contextual Info: DRAM MODULE KMM374F804BS KMM374F804BS Fast EDO Mode without buffer 8M X 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F804BS is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F804BS

Contextual Info: DRAM MODULE KMM466F404BS2-L 4Mx64 SODIMM 4Mx16 base Revision 0.1 Nov. 1997 Rev.0.1 (Nov. 1997) ELECTRONICS DRAM MODULE KMM466F404BS2-L Revision History Version 0.0 (Sept. 1997) • R e m o v e d tw o AC p a r a m e te r s t c a c p ( a c c e s s tim e fr o m CAS) a n d tA A P ( a c c e s s tim e fr o m c o l. a d d r . ) in A C CHARACTERISTICS.

Contextual Info: KMM372F404BS DRAM MODULE Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 ELECTRONIC! DRAM MODULE KMM372F404BS Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.

Contextual Info: DRAM MODULE KMM466F404BS2-L 4Mx64 SODIMM 4Mx16 base Revision 0.0 Dec. 1997 DRAM MODULE KMM466F404BS2-L Re v i s i o n H is to ry Version 0.0 (Dec. 1997) * Removed two AC parameters t c a c p (access tim e from CAS) and tAAP (access time from col. addr.) in AC C H A R A C T E R I S T I CS .

Contextual Info: KM M 372F804B S DRAM MODULE KM M 372F 80 4B S EDO M o d e 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Samsung KMM372F804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F804B consists ot eight 4M x16bits & four 4Mx4bits CMOS DRAMs in

Contextual Info: DRAM MODULE KMM466F804BS1-L KMM466F804BS1-L EDO Mode 8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F804BS1-L is a 8Mx64bits Dynamic • Part Identification RAM high density memory module.

KMM372F804BS

Contextual Info: KMM372F804BS DRAM MODULE KMM372F804BS EDO Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F804B consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in

Contextual Info: DRAM MODULE KMM466F404BS2-L KMM466F404BS2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F404BS2-L is a 4Mx64bits Dynamic RAM high density memory module. The • Part Identification

Contextual Info: DRAM MODULE KMM332F804BS/BZ-L 8Mx32 SODIMM 4Mx16 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332F804BS/BZ-L Revision History Version 0.0 (Sept, 1997) Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.

Contextual Info: DRAM MODULE KM M 3 6 6 F 4 0 8 4 B S1 Unbuffered 4Mx64 DIMM (4Mx16 base) Revision 0.0 Dec. 1997 L££TRt»ü£S DRAM MODULE KM M 3 6 6 F 4 0 ( 8 ) 4 B S1 Re v is io n H is to ry Version 0.0 (Dec. 1997) • R em oved tw o A C p aram eters t cacp (access tim e from C A S ) and

Contextual Info: DRAM MODULE KMM466F804BS1-L Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. • Changed the parameter t CAC(access time from CAS) from 13ns to 15ns @ -5 in AC CHARACTERISTICS.

KMM374F804BS

Contextual Info: DRAM MODULE KMM374F804BS KMM374F804BS Fast EDO Mode without buffer 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F804BS is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F804BS

Contextual Info: DRAM M ODULE KMM374F804BS Unbuffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 DRAM M ODULE KMM374F804BS Revision History V e r s i o n 0.0 ( Se pt , 1 9 97 ) Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.

Contextual Info: KMM372F404BS DRAM MODULE Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KM M 3 7 2 F 4 0 4 B S Re v is io n H is to ry Version 0.0 (Sept. 1997) • R e m o v e d tw o A C p a ra m e te rs t c a c p (a c c e s s tim e fro m C A S ) a n d tA A P (a c c e s s tim e fro m col. a d d r.) in A C C H A R A C T E R I S T I C S .

Contextual Info: DRAM MODULE KMM366F80 8 4BS1 KMM366F80(8)4BS1 EDO Mode without buffer 8M x 64 DRAM DIMM Using 4Mx16, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F80(8)4BS1 is a 8Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F80(8)4BS1 consists of eight CMOS 4Mx16bits