KM41C16100J Search Results

1mx1 DRAM

Abstract: taa 723 KM41C16100-6 KM41C16100-7 KM41C16100-8
Contextual Info: KM41C16100 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1 C 1 6 1 0 0 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random A ccess M em ory. Its design is optim ized fo r high perform ance applications

Contextual Info: KM41C16100 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 16100 is a high speed CMOS 1 6 ,77 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications

41C16100-7

Contextual Info: KM41C16100 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 16100 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its design is optimized tor high performance applications

41C16100

Abstract: 24-PIN 41C16000
Contextual Info: MEMORY ICs D yn am ic R A M Capacity Continued Part Number 16M i FUNCTION GUIDE Organization Speed(ns) Features Technology Packages Remark * KM418V256ALLT 256K X 1B 70/80 CMOS Fast Page(3.3V) 40 Pin TSOP-ll(Forward) Now * KM418V256ALLTR 256K X 18 70/80 CMOS

41C16100

Contextual Info: CMOS DRAM KM41C16100 16M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 16100 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: SAMSUNG ELECTRONICS INC h ?E D WÊ 7^b414S KM41C16100 GOlbGSS 54 2 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1C 16100 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its

PE 8001A

Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1

KM424C256Z

Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100

KMM591000AN

Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Contextual Info: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC

KM41C16100-7

Contextual Info: PRELIMINARY KM41C16100 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C16100 is a high speed CMOS 16,777,216X1 Dynamic Random Access Memory. Its design is optimized for high performance applications