KM681000 Search Results

TAA 310A

Abstract: KM681000BLP-7L 128k x8 SRAM TSOP km681000blp-7 KM681000B KM681000BL KM681000BLE KM681000BL-L
Contextual Info: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 um CMOS • Organization : 128K x 8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage : 2V Min • Three state output and TTL Compatible

68 1103

Abstract: KM681000BL A14F
Contextual Info: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION The KM 681000BUBL-L is a 1,048,576-bit high-speed Static Random Access Memory organized as131,072 words by 8 bits. The device is fabricated using Samsung's advanced

Contextual Info: KM681000BLE / BLE-L CMOS SRAM 128Kx8 Bit Extended Temperature Range Operating SRAM FEATURES GENERAL DESCRIPTION • Extended Temperature Range : -25 to 85°C • Fast Access Time : 70,100 ns Max. • Low Power Dissipation Standby (CM O S): 550nW(Max.)L-Ver.

Contextual Info: KM681000ALPI/ALGI CMOS SRAM 128Kx8 Bit Static RAM Industrial Temperature Range Operation FEATURES GENERAL DESCRIPTION • In d ustria l Tem perature Range: - 4 0 to 85°C • Fast A ccess Tim e: 70,100 ns (Max.) • Low Power D issip a tio n Standby (C M O S ): 550/jW (Max.) L-\fer.

Contextual Info: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby (CMOS): 550(iW (max.) L Version 110fiW (max.) U- Version Operating : 385mW(max.) • Single 5V±10% Power Supply

Contextual Info: KM681000B Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft for com m ercial product - Com mercial Product only O ctober 28th, 1992 Prelim inary 0.1 - Initial draft for Extended/Industrial Product

km681000lp

Abstract: KM681000LG KM681 km681000l
Contextual Info: KM681000L/KM681000L-L CMOS SRAM 128K X 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70, 85, 100, 120ns max. • Low Power Dissipation — Standby (CMOS): 10|jW (typ.) L-Version 5^iW(typ.) L-L Version — O perating : 110mW/MHz (max.)

KM681000

Abstract: A12E
Contextual Info: SAMSUNG SE MICONDUCT OR INC 23E D • 7 cit>Mm2 0000304 5 ■ Advanced Information CMOS SRAM KM681000/KM681000L T - - ^ ' 2 3 1 2 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 70, 80, 1 0 0 ,120ns max. • Low Power Dissipation

KM681000AL-L

Abstract: KM681000ALT
Contextual Info: CMOS SRAM KM681000AL/KM681OOOAL-L 128K X8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55,70,85,100,120ns max. • Low Power Dissipation Standby (CMOS): 1 0/j W (typ.) L-Version 5piW (typ.) LL-Version O perating : 35m W (typ.) • Single 5 V ± 1 0 % Power Supply

km681000clg-5l

Abstract: KM681000CLP-7 KM681000CLP-7L KM681000CLT-5L KM681000C KM681000CL KM681000CLI KM681000CL-L KM681000CLP7L
Contextual Info: PRELIMINARY KM681000C Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History History Draft Date Remark 0.0 Initial draft November 22, 1995 Design target 0.1 First revision - Seperate read and write at ICC, ICC1 ICC = ICC1 → Read : 15mA, Write : 35mA

Contextual Info: S A M S UN G E L E C T R O N I C S INC b4E D • 7 * ^ 4 1 4 2 0 0 1 4 0 2 4 OT4 ■ SMGK KM681000ALV CMOS SRAM 131,072 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Extended Operating Voltage: 2 . 7 - 5.5V • Fast Access Time 3V Operation: 240ns Max.

Contextual Info: KM681000BL/BL-L CMOS SRAM 131,072 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION Pin Nam e ? —? p ÒÒ OOp OOcolt Pin Function A 0 -A 16 Address Inputs We Write Enable input CS1, CS2 Chip Seet Input ÔE 1/01-1/08 uuuuyuyuyuuuyuuu PIN CONFIGURATION Top Views

Contextual Info: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 urn CMOS • Organization: 128K x 8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage: 2V Min • Three state output and TTL Compatible

Contextual Info: Advance Information KM681000C Family 128Kx8 bit Low Power CMOS Static RAM CMOS SRAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 uM CMOS The • Organization : 128K x 8 • Power Supply Voltage : Single 5V +/-10% SAMSUNG'S advanced CMOS process technology.

cs1g

Contextual Info: KM681000ALI/ALI-L CM O S SRAM 131,072 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range: - 4 0 to 85°C The KM 681000ALI/ALI-L is a 1,048,576-bit high-speed S ta tic R and o m A c c e s s M em ory o rganized as 131,072

681000CLP

Abstract: P55n 681000C 2U27 0-00C M681000CL
Contextual Info: Advance Information KM681000C Family CMOS SRAM 128Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 uM CMOS • Organization : 128Kx8 • Power Supply Voltage : Single 5V +/-10% The KM681000C family is fabricated

sram 681000

Abstract: KM681000ELG-5L KM681000
Contextual Info: Preliminary KM681000E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. 0.0 H istory Draft Data Remark Design target October 12, 1998 Prelim inary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and

KM681000ELG-5L

Abstract: KM681000E KM681000EL KM681000ELI KM681000ELI-L KM681000EL-L 32-DIP-600 128Kx8 cmos sram 600mil km681000elg-7
Contextual Info: KM681000E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin for industrial product.

KM681000BLE

Contextual Info: CMOS SRAM KM681000BLE / BLE-L 128Kx8 B it Extended Temperature Range Operating SRAM GENERAL DESCRIPTION FEATURES • E x te n d e d T e m p e ra tu r e R a n g e : -2 5 to 85°C T h e K M 6 8 1 0 0 0 B L E /B L E -L is a 1 ,0 4 8 ,5 7 6 -b it h ig h -s p e e d

km681000lp

Contextual Info: SAMSUNG E L E C T R O N I C S INC b4E ]> • 7^4142 KM681000L/KM681000L-L 0 D1 3 eì cì b 521 SMGK CMOS SRAM 128K X 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70, 85, 100, 120ns max. • Low Power Dissipation -S ta n d b y (CMOS): lO^W (typ.) L-Version

Contextual Info: KM681000AL/KM681000AL-L CMOS SRAM 128KX8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access T im * 70,85,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10pW (typ.) L-Version 5|iW (typ.) LL-Version Operating : 35mW (typ.) • Single S V ±10 % Power Supply

Contextual Info: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 urn CMOS The KM681000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 128K x 8

681000BLP-7L

Abstract: 681000BLP B8100 KM681000BI 681000BLG
Contextual Info: KM681000B Family CMOS SRAM 128K x8 bit Low Power CMOS Static RAM FEATURES G EN ER A L DESCRIPTION • Process Technology: 0.6nm C M O S • Organization: 128Kx8 • Power Supply Voltaga: Single 5.0V±10 % • Low Date Retention Voltage : 2V Mln • Three state output and TTL Compatible

Contextual Info: KM681000AL-V CMOS SRAM 1 2 8 K x 8 Bit Static R A M W ide Voltage Range Operation FEATURES GENERAL DESCRIPTION • Extended Operating Voltage: 2.7-5.5V • Fast Access Time — 3V Operation: 240ns (Max.) — 5V Operation: 120ns (Max.) • Low Power Dissipation Standby/Operating