KSB1017 Search Results

Contextual Info: KSD1408 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Complement to KSB1017 TO-220F ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage C haracteristic V cB O Symbol 80 V Collector Emitter Voltage V cE O 80 V Emitter Base Voltage

KSB1017

Abstract: KSD1408
Contextual Info: KSB1017 PNP SILICON EPITAXIAL TRANSISTOR POWER AMPLIFIER APPLICATIONS TO -2 2 0 F • Com plem ent to KSD 1408 ABSO LU TE MAXIMUM RATINGS Rating Unit Collector B ase Voltage Characteristic V cbO Symbol - 80 V Collector Emitter Voltage V cE O - 80 V Emitter Base Voltage

Contextual Info: KSD1408 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Complement to KSB1017 ABSOLUTE MAXIMUM RATINGS Rating Symbol Characteristic Unit V V V A A W "C Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current

Contextual Info: KSB1017 PNP SILICON EPITAXIAL TRANSISTOR POW ER AMPLIFIER APPLICATIONS TO-220F • C om plem ent to K S D 1 4 0 8 ABSOLUTE MAXIMUM RATINGS C h a ra c te ristic R a tin g Sym bol U nit Collector B a s e V o ltage V cbo -8 0 V Collector Emitter Voltage VcEO

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSD1408 POWER AMPLIFIER APPLICATIONS • C om plem ent to KSB1017 TO-22QF ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating Unit C ollecto r Base Voltage V cbO 80 V C ollecto r E m itter Voltage V cE O 80 V E m itter Base Voltage

Contextual Info: KSB1017 PNP SILICON EPITAXIALTRANSISTOR POWER AMPLIFIER APPLICATIONS • Complement to KSD1408 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage C haracteristic VcBO Symbol - 80 V Collector Emitter Voltage V ceo - 80 V Emitter Base Voltage V ebo

Contextual Info: KSD1408 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Complement to KSB1017 TO-220F ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Collector Dissipation TC=25°C

KSB1017

Abstract: KSD1408
Contextual Info: KSD1408 KSD1408 Power Amplifier Applications • Complement to KSB1017 TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 80 Units

KSB1017YTU

Abstract: KSB1017Y
Contextual Info: KSB1017 KSB1017 Power Amplifier Applications • Complement to KSD1408 TO-220F 1 1.Base 2.Collector 3.Emitter PNP Silicon Epitaxial Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value - 80

SD1408

Contextual Info: KSB1017 PNP SILICON EPITAXIAL TRANSISTOR POWER AMPLIFIER APPLICATIONS T O -22 0 F • C om plem en t to K SD 1408 ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit C o lle cto r Base V oltage C o lle c to r E m itter Voltage VcBO -8 0 V VCEG E m itter Base V oltage

Contextual Info: KSB1017 KSB1017 Power Amplifier Applications • Complement to KSD1408 TO-220F 1 1.Base 2.Collector 3.Emitter PNP Silicon Epitaxial Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units VCBO Collector-Base Voltage

Contextual Info: KSB1017 KSB1017 Power Amplifier Applications • Complement to KSD1408 TO-220F 1 1.Base 2.Collector 3.Emitter PNP Silicon Epitaxial Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value - 80

KSD1408Y

Contextual Info: KSD1408 KSD1408 Power Amplifier Applications • Complement to KSB1017 TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 80 Units

KSB1017

Abstract: KSD1408
Contextual Info: KSD1408 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • C om plem ent to KSB1017 TO-22QF ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage Characteristic V c bO Sym bol 80 V C ollecto r E m itter Voltage V cE O 80 V Em itter Base Voltage

KSB1017

Abstract: KSD1408
Contextual Info: KSB1017 KSB1017 Power Amplifier Applications • Complement to KSD1408 TO-220F 1 1.Base 2.Collector 3.Emitter PNP Silicon Epitaxial Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value - 80

KSB1017

Abstract: KSD1408
Contextual Info: KSB1017 PNP SILICON EPITAXIAL TRANSISTOR POWER AMPLIFIER APPLICATIONS • C om plem ent to KSD1408 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollecto r Base Voltage C h a r a c te r is tic Sym bol V cbO - 80 V C ollecto r E m itter Voltage VcEO - 80 V E m itter Base Voltage

lt 344

Contextual Info: KSD1408 NPN EPITAXIAL SILICON TRANSISTOR POWER AM PLIFIER APPLICATIONS • Complement to KSB1017 ABSO LUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage Collector Emitter Voltage VcBO 80 V VcEO Emitter Base Voltage Collector Current

fjaf6812

Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
Contextual Info: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320

BJT BD139

Abstract: TIP416 ksh200 equivalent BD243 ksh50 power BJT BD242 tip426 BD53 kse13003
Contextual Info: Discrete Power BJT General Purpose Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320 0.01 - 0.6 KSC2258 0.1

BD53A

Abstract: KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10
Contextual Info: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment “i Package Application FM AM D iff. Amp RM AM P M ix Conv Local Ose IF SOT-23 KSC2223 KSC2223 KSC2223 KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715 10W 20W KSA812/KSC1623

transistor 13003 AD

Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

tip122 tip127 audio board

Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
Contextual Info: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM