KSC5029 Search Results

Contextual Info: KSC5029 KSC5029 High Voltage and High Reliabilty • High Speed Switching • Wide SOA TO-3P 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 1100

TRANSISTOR C 557 B

Contextual Info: NPN SILICON TRANSISTOR KSC5029 HIGH VOLTAGE AND HIGH RELIABILITY T 0-3P H IG H SP EED S W IT C H IN G W ID E SO A ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Rating Unit VcBO 1100 VcEO 800 V V V A A A W "C °c Symbol Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: NPN SILICON TRANSISTOR KSC5029 HIGH VOLTAGE AND HIGH RELIABILTY • HIGH SPEED SWITCHING • WIDE SOA ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Rating Unit Collector- Base Voltage VcBO 1100 V Collector- Emitter Voltage VcEO 800 V Emitter- Base Voltage

Contextual Info: KSC5029 KSC5029 High Voltage and High Reliabilty • High Speed Switching • Wide SOA TO-3P 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage

Contextual Info: KSC5029 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILTY • HIGH SPEED SW ITC HING • W ID E S O A ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector- Base Voltage Characteristic V cB O Sym bol 1100 V C ollector- E m itter Voltage V cE O 800 V Em itter- Base Voltage

KSC5029

Contextual Info: KSC5029 KSC5029 High Voltage and High Reliabilty • High Speed Switching • Wide SOA TO-3P 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 1100

KSC5029

Contextual Info: KSC5029 KSC5029 High Voltage and High Reliabilty • High Speed Switching • Wide SOA TO-3P 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 1100

Contextual Info: KSC5029 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILTY HIGH SPEED SW ITC H IN G W ID E SO A ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating Unit C ollector- Base Voltage V cB O 1100 V C ollector- E m itter Voltage V cE O 800 V Em itter- Base Voltage

KSC5029

Abstract: 5.1B1 NPN Transistor 1.5A 400V
Contextual Info: NPN SILICON TRANSISTOR KSC5029 HIGH VO LTAG E AND HIGH RELIABILTY • H IG H S P E E D S W IT C H IN G • W ID E S O A A BSOLUTE M AXIMUM RATINGS Rating Unit C o lle c to r- B a s e V o lta g e Characteristic V cB O Sym bol 110 0 V C o lle c to r- E m itte r V o lta g e

Contextual Info: KSC5029 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILTY H IGH S P E E D S W IT C H IN G W ID E SOA ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit Collector- Base Voltage VcBO 1100 Collector- Emitter Voltage VcEO 800 V Emitter- Base Voltage

e239

Contextual Info: NPN SILICON TRANSISTOR KSC5029 HIGH VOLTAGE AND HIGH RELIABILITY H IG H S P E E D S W IT C H IN G W ID E S O A ABSOLUTE MAXIMUM RATINGS Characteristic Symbol C ollector-Base Voltage Rating Unit V cB O 1 100 Collector-Em itter Voltage Emitter-Base Voltage C ollector C urrent DC I

fjaf6812

Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
Contextual Info: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320

KSC5027

Abstract: power BJT KSC5345 KSE13009 KSE13007 KSE13007 equivalent BUT11 KSA1156 KSC2333 KSC2335
Contextual Info: Discrete Power BJT Switch Products VCEO V VCBO (V) VEBO (V) IC (A) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) tSTG (us) tF (us) TO-126 NPN Configuration KSC2752 400 500 7 0.5 10 20 80 0.05 - 1 2.5 1 KSC5026M 800 1100 7 1.5 20 10 40 0.1 - 2 3 0.3

transistor 13003 AD

Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)

tip122 tip127 audio board

Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
Contextual Info: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

ksd 180

Abstract: ksd 180/60 ksd 250 se130 tip142
Contextual Info: TRANSISTO RS FUNCTION GUIDE 2. POWER TRANSISTORS 2.1. General Purpose Transistors 2.1.1 T O -1 2 6 Type T r a n s is to rs Device Type Condition Ic VCEO A (V) NPN PNP 0.1 180 KSC2682 KSA1142 200 KSC3502 300 KSC3503 0.1 VCE 200 Condition hFE Ic Ic VcE{sat)(V)

ksd 168

Abstract: KSA 1102 ksd 301 ksp13 601 KSD 105 13003 bd KSR1107 SA1142 13003 sd KSC5027
Contextual Info: ALPHANUMERIC INDEX 1. KSA Series Device KSA473 KSA539 KSA542 KSA614 KSA642 KSA643 KSA708 KSA709 KSA733 KSA812 KSA910 KSA916 KSA928 KSA931 KSA940 KSA954 KSA992 KSA1010 KSA1013 KSA1015 K SA 1142 KSA1150 KSA1156 KSA1174 KSA1175 KSA1182 KSA1201 KSA1203 KSA1220

D880 voltage regulator

Abstract: B0244C TIP28C transistor d880 VOLTAGE REGULATOR D880 D880 TRANSISTOR TIP28 A992 transistor E13009 ksd-180
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition Vet: (V) Ic (A) hpe Condition Vce(sat), VeE(sat)(v) Condition (V) (mA) MAX KST56(2G) KST55(2H) 80 0.5

"transistors Vceo"

Contextual Info: TRANSISTORS FUNCTION GUIDE 2-3. Switching Transistors VcEO V 300 •c (A) Device Condition Condition hpE (NPN) VCE (V) lc (A) MIN MAX lc (A) (A) VcBSAll(V) (m S ) t, MAX <mS) to» tstg MAX MAX MAX kS ) Ib TYP Switching Time Pc Package (W) 4 KSE13004 5 2

ss8050 d 331

Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
Contextual Info: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

fqa38n30

Abstract: FGA25N120 FGA15N120ANDTU FQA11N90C TO-3P package SGH80N60UFTU FQA9N90 MARKING EA MOSFET IRFP460C FGA15N120ANTU
Contextual Info: Date Created: 2/8/2004 Date Issued: 2/23/2004 PCN # 20040605 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will

Contextual Info: SAMSUNG ELECTRONICS INC bOE ]> • 7T b mM B 0 0 1 1 5 3 7 TRANSISTORS SfiS ■ SPIGK FUNCTION GUIDE 2-3. Switching Transistors VcEO lc Device Switching Time Condition Condition MAX <mS MAX 0‘S) ti MAX <mS) 1*»9 NPN) VCE (V) lc (A) MIN MAX lc (A) (A)

KSC5027

Abstract: KSC5028 KSC5025 KSC5026 KSC5029 LA1LA NPN Transistor 1.5A 400V
Contextual Info: SA MS U N G SEMICONDUCTOR INC 14 E D f l 7=^4142 G007Sflfl NPN SILICON TRANSISTOR KSC5024 HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS Ta= 25°C Symbol - Characteristic .Collector-Base Voltage Collector-Emitter Voltage