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    L7E TRANSISTOR Search Results

    L7E TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    L7E TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5B smd transistor data

    Abstract: TRANSISTOR SMD MARKING CODE 5b 5B SMD TRANSISTOR TRANSISTOR D 1853
    Text: • bbS3T31 0025675 L20 H A P X N AUER PHILIPS/DISCRETE PMBT5088 L7E D 7 V SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N small-signal transistor in plastic SOT-23 envelope intended for low-noise input stages in audio equipment, when using SMD technology. QUICK REFERENCE DATA


    OCR Scan     		PDF bbS3T31 PMBT5088 OT-23 5B smd transistor data TRANSISTOR SMD MARKING CODE 5b 5B SMD TRANSISTOR TRANSISTOR D 1853

    Untitled

    Abstract: No abstract text available
    Text: • 0025^82 741 ■ APX N AMER PHILIPS/DISCRETE PXT4403 L7E » yv SILICON PLANAR EPITAXIAL TRANSISTOR PNP silicon planar epitaxial transistor, housed in a SOT89 envelope. It is intended for linear switching applications. The complementary type is PXT4401.


    OCR Scan     		PDF PXT4403 PXT4401.

    transistor D 5032

    Abstract: 5032 transistor philips FP 9600 2222 372 d 5032 transistor APX 2600 TRANSISTOR PHL 0284 2222 379 2322 731 D0246
    Text: bbS 3 q 31 Philips Semiconductors ODEMflga 335 W A P X Product specification NPN 4 GHz wideband transistor M ANER DESCRIPTION ^ PHILIPS/DISCRETE L7E BFG35 D _ PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope. Intended for wideband


    OCR Scan     		PDF bbS3q31 BFG35 OT223 BFG55. 500MHz transistor D 5032 5032 transistor philips FP 9600 2222 372 d 5032 transistor APX 2600 TRANSISTOR PHL 0284 2222 379 2322 731 D0246

    transistor 667

    Abstract: No abstract text available
    Text: ^^53^31 0035133 404 APX Philips S em iconductors Product specification N AHER PHILIPS/DISCRETE NPN 6 GHz wideband transistor FEATURES • L7E 1 e BFR93A PINNING PIN High power gain DESCRIPTION • Low noise figure • Very low intermodulation distortion 2


    OCR Scan     		PDF BFR93A BFT93. transistor 667

    Untitled

    Abstract: No abstract text available
    Text: • bb53T31 0Q24b77 744 APX N AUER PHILIPS/DISCRETE L7E BF721 BF723 J> SILICON EPITAXIAL TRANSISTORS PNP transistors in a microminiature plastic envelope intended for application in class-B video output stages in colour television receivers, and general purpose high voltage circuits.


    OCR Scan     		PDF bb53T31 0Q24b77 BF721 BF723 BF720 BF722 0Q24b7T

    s8014 transistor

    Abstract: No abstract text available
    Text: Philips Semiconductors bLS3^31 0 0 2 4 ^ 10R • APX Product specification N AUER PHILIPS/DISCRETE L7E NPN 9 GHz wideband transistor £ BFG520; BFG520/X; BFG520/XR FEATURES • High power gain • Low noise figure PINNING PIN DESCRIPTION • High transition frequency


    OCR Scan     		PDF BFG520; BFG520/X; BFG520/XR BFG520 and08 s8014 transistor

    Untitled

    Abstract: No abstract text available
    Text: nu. . 0 . J Philips Semiconductors • ^53=131 0 0 2 ^ 2 3 21b « A P X " n AMER PHILIPS/DISCRETE NPN 7 GHz wideband transistor DESCRIPTION Product specification L7E T> BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband


    OCR Scan     		PDF BFG135 OT223

    Untitled

    Abstract: No abstract text available
    Text: • b b s a 'm BCP51 B C P52 B C P53 002451? 3'n « apx N AMER PHILIPS/DISCRETE L7E J> y v SILICON PLANAR EPITAXIAL TRANSISTORS Medium power pnp transistors in a miniature plastic envelope intended for applications in thick and thin-film circuits. They are general purpose transistors, primarily designed for audio amplifier output


    OCR Scan     		PDF BCP51 BCP54, BCP55 BCP56 BCP52 BCP53

    BB530

    Abstract: No abstract text available
    Text: • [3^53131 DDESMTti T47 ■ APX BF245A TO C N AUER PHILIPS/DISCRETE L7E D N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS General purpose symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications in l.f. and d.c. amplifiers, and in h.f. amplifiers.


    OCR Scan     		PDF BF245A BF245A/0 0023SD4 bhS3T31 7Z62701 hbS3T31 BB530

    Untitled

    Abstract: No abstract text available
    Text: • b L 5 3^31 0025flb3 30"! N AMER PHILIPS/DISCRETE APX L7E D PM B T3904 yv SILICON EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature SMD plastic envelope intended for surface mounted applications. They are primarily intended for use in telephony and professional communication equipment.


    OCR Scan     		PDF 0025flb3 T3904 100/tA;

    L7E transistor

    Abstract: No abstract text available
    Text: •I bbS3^31 33T H A P X N AUER PHILIPS/DISCRETE PMBT5401 L7E ]> y v SILICON P-N-P HIGH-VOLTAGE TRANSISTOR P-N-P high-voltage small-signal transistor for general purposes and especially in telephony applications and encapsulated in a SOT-23 envelope. QUICK REFERENCE DATA


    OCR Scan     		PDF PMBT5401 OT-23 OT-23es L7E transistor

    transistor A05

    Abstract: 2N6388 npn darlington 2N6386 2N6387 2N6666 2N6667 2N6668 Complementary Darlington Audio Power Amplifier 079V
    Text: ÏÏÏ 38 75081 dF | 3 fl? S D Û l Q Q l7E 4fl 7 G E S OL ID S T A T E Darlington Power Transistor» 01E 17248 D T - 3 3 - Z 1 _ ._ 2N6386, 2N6387, 2N6388 File Number 10-Ampere N-P-N Darlington


    OCR Scan     		PDF 2N6386, 2N6387, 2N6388 10-Ampere 2N6388) 2N6386) O-220AB transistor A05 npn darlington 2N6386 2N6387 2N6666 2N6667 2N6668 Complementary Darlington Audio Power Amplifier 079V

    xl 1225 transistor

    Abstract: BFG135 amplifier transistor B 1184 BFG135 bfg135 scattering transistor d 1557 603-30-1 BFG135 A amplifier 2222 379 UBB300
    Text: nu. e „ • Philips Semiconductors 1— 1 b 1353131 0024123 21b ■ APX AMER PH IL IP S/D IS CR ET E Product specification L7E D NPN 7 GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband


    OCR Scan     		PDF BFG135 OT223 MSB002 OT223. xl 1225 transistor BFG135 amplifier transistor B 1184 BFG135 bfg135 scattering transistor d 1557 603-30-1 BFG135 A amplifier 2222 379 UBB300

    transistor smd zG

    Abstract: npn smd zg smd transistor 513 BFG17 BFG17A smd jpS SMD transistor ZG
    Text: „. e . . . • P hilips Sem iconductors DDEM7S1 D5b BIAPX N AUER PHIL I P S / D I S C R E T E P roduct specification L7E D NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a microminiature plastic S O U 43 surface mounting envelope with


    OCR Scan     		PDF BFG17A OT143. transistor smd zG npn smd zg smd transistor 513 BFG17 BFG17A smd jpS SMD transistor ZG

    Marking G1s

    Abstract: No abstract text available
    Text: I bbS3131 [][]P3bP3 bat. • APX BF992R N AUER PHILIPS/DISCRETE L7E D yv SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143R microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended fo r use in VHF applications, such as VHF


    OCR Scan     		PDF bbS3131 BF992R OT143R Marking G1s

    Untitled

    Abstract: No abstract text available
    Text: • bbS3^31 00353^1 DSD H A P X N AUER PHILIPS/DISCRETE BSR30 to 33 L7E D J V SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in miniature plastic envelopes intended for application in thick and thin-film circuits. They are intended for use in telephony and general industrial applications.


    OCR Scan     		PDF BSR30 BSR30 BSR33

    L7E transistor

    Abstract: BF820 BF821 BF822 BF823
    Text: • bb53^31 N AMER □□2M7DM 5T2 B A P X PHILIPS/DISCRETE L7E BF821 BF823 ]> SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a microminiature plastic envelope intended for application in thick and thin-film circuits. Primarily intended fo r use in telephony and professional communication equipment. N-P-N


    OCR Scan     		PDF BF821 BF823 BF820, BF822 BF821 L7E transistor BF820 BF823

    Untitled

    Abstract: No abstract text available
    Text: • APX LLS3S31 0D2MM71 HbU N AMER PHILIPS/DISCRETE BC856 BC857 BC858 L7E D ; v SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistros, in a SOT-23 plastic package. QUICK REFERENCE DATA BC856 BC857 BC858 “ V CEX max. 80 50 30 V - v CEO max. 65 45 30 V Collector current peak value


    OCR Scan     		PDF LLS3S31 0D2MM71 BC856 BC857 BC858 OT-23 BC856/857

    Untitled

    Abstract: No abstract text available
    Text: 0 0 2 4 ^ 1T3 « A P X N AMER PHILIPS/DISCRETE BCX54 BCX55 BCX56 L7E D ; v SILICON PLANAR EPITAXIAL TRANSISTORS Medium power n-p-n transistors in a miniature plastic envelope intended for applications in thick and thin-film circuits. These transistors are intended for general purposes as well as for use in driver stages


    OCR Scan     		PDF BCX54 BCX55 BCX56 BCX51, BCX52 BCX53 LibS3T31

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors 3 31 0023545 075 bbS T Silicon n-channei dual gate MOS-FETs FE A T U R E S APX Product specification N ANER PHILIPS/DISCRETE L7E D BF901; BF901R Q U IC K R E F E R E N C E DATA • Intended for low voltage operation • Short channel transistor with high


    OCR Scan     		PDF BF901; BF901R BF901R OT143 OT143R

    Untitled

    Abstract: No abstract text available
    Text: t>LS3T31 0024737 T4T « A P X N AMER PHILIPS/DISCRETE BF990AR L7E T> J V. SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic S O T 1 4 3 R microminiature envelope with source and substrate interconnected, intended for U H F applications, such as U H F television tuners and


    OCR Scan     		PDF LS3T31 BF990AR

    marking CODE M92

    Abstract: No abstract text available
    Text: • bbS3T31 0023blfi a n ■ APX BF992 N AUER PHI LIP S/ DIS CR ETE L7E D _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T143 m icrom iniature envelope w ith source and substrate interconnected. T his M O S-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.


    OCR Scan     		PDF bbS3T31 0023blfi BF992 0023b22 marking CODE M92

    Untitled

    Abstract: No abstract text available
    Text: ^ 5 3 ^ 3 1 0025444 323 « A P X N AMER PHILIPS/DISCRETE BRY62 L7E D 7 V SILICON P-N-P-N PLANAR TETRODE THYRISTOR Planar p-n-p-n trigger device in a microminiature plastic envelope. It is intended for use as a program­ mable trigger device SCS = silicon controlled switch .


    OCR Scan     		PDF BRY62 bbS3T31

    bsd214

    Abstract: philips bsd215 BSD213 BSD215 BSD212 KT 117 diode t7e L7E transistor IEC134
    Text: • titiS3T31 00E374S 15fl ■ N AUER P H I L I P S / D I S C R E T E APX BSD212 to BSD215 L7E D MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTORS Symmetrical insulated gate silicon M O S field-effect transistor of the N-channel enhancement mode type. These transistors are herm etically sealed in a TO-72 envelope and feature a low ON-resistance, high


    OCR Scan     		PDF titiS3T31 00E374S BSD212 BSD215 BSD213 BSD215 BSD214 philips bsd215 KT 117 diode t7e L7E transistor IEC134