LHMV Search Results

mask ROM

Contextual Info: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LH53V64P00T 64M Mask ROM Model No.: LHMV0Bxx Spec No.: MR97406 Issue Date: April 11, 1997 64 Meg bit, Mask ROM, 3V, LH53V64P00T

LHMN5

Abstract: 48TSOP LH5332600 LH5332600N LH5332600T LH5332C00D TSOP048-P-1218 LH5332500 2sj au LHMV
Contextual Info: NBA/ INFORMATION LH5332600 • High-speed 32M-bit Mask-Programmable ROM Pin Connections Description The LH5332600N/T User's No. : LHMN56XX/LHMN5FXX is a CM OS 32M-bit mask-programmable ROM organized as 4 194 304X8 bits (Byte mode) or 2 097 152X 16 bits (Word

Contextual Info: Power Schottky Rectifier ^FAV V rRM Vf 2x60 A 3 5 -45 V 0.66 V Preliminary Data RSM V V 35 45 35 45 Symbol miniBLOC, SOT-227 B Type RRM -i-o -WDSS 2x61-0035A DSS 2x61 -0045A Test Conditions Maximum Ratings Tc = 105°C; rectangular, d = 0.5 Tc = 105°C; rectangular, d = 0.5; per device

LD3600

Abstract: Eaton rgc320032e HFD3225 Eaton WESTINGHOUSE scr LS CIRCUIT BREAKERS ld2500 Cutler-Hammer Digitrip RMS 310 trip unit digitrip 310 time curve Digitrip OPTIM 1050 HMCP030H1
Contextual Info: Molded Case Circuit Breakers Series G Circuit Breakers 2.1 Introduction Product Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Typical Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

LH231G

Abstract: lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235
Contextual Info: MEMORIES ★Under development • M ask ROMs SlpÉHRfi Bonflgmllan jvorai x d m i NMOS <"^g|g|ï|ïi£- User1* No. sssysr Sllpjiijp 1 currant mA MAX. ■ Paefcagfe ft- • 64k 8k x 8 LH2389D LH2369XX 200 60 5 ± 10% 28DIP 128k 16k x 8 LH23128D LH2326XX 200

lh5s4

Abstract: lh537 48-TSOP LH5s 42-DIP 48TSOP1 LH5364P00D LH538 LH5S46
Contextual Info: MEMORIES • Mask ROM Specific Pinout ★ U n d e rd e v e lo p m e n t • 3 V 3 .3 V operation Access time B it C a p a c ity configuration 1M x8 2M x 8/x 16 4M x 8/x 16 8M x 8/x 16 16M x 8/x 16 32 M x 8/x 16 64M 128M * x 8/x 16 x 16 Readable at 2.7 V.

lh537

Abstract: 42DIP lh533200 LH535g
Contextual Info: MEMORIES • Mask ROMs Process CMOS ★ U n d e r development MEMORIES ★ Under developm ent Configuration Process Capacity (wortsxbits Access time (ns) MAX. Model No. Pinout LH-538VXX 100 100 5 ± 10% 32DIP/32SOP/32TSOPÎII) Normal 120 60 5 ± 10% L H 5 3 8 3 0 0 C D /C W C S Æ S H

D423

Contextual Info: DSS 15-0045B Power Schottky Rectifier U av V rrm VF 16 A 45 V 0.42 V Preliminary Data v RSM Type V rrm V V 45 45 A~' DSS 16-0045B I C TAB A = Anode, C = Cathode , TAB = Cathode Symbol ^FRMS Maximum Ratings Test Conditions ^FAV Tc = 130°C; rectangular, d = 0.5

DSEL20

Contextual Info: DSEI20 vRRM Fast Recovery Epitaxial Diode FRED 1200 V FAVM 17 A rr 40 ns Prelim inary data v RSM v rrm f A T y p e C TO-220 AC V V 1200 1200 DSEI 20-12A C (TAB) Symbol Test Conditions U rms Tyj Maximum Ratings U rm = T y JM Tc = 85°C; rectangular, d = 0.5

Contextual Info: Fast Recovery Epitaxial Diode FRED DSEI 60 lFAVM = 60 A v RRM= 1000 v trr = 35 ns TO-247 AD c A Symbol Test Conditions *FRMS T VJ - T VJU Maximum Ratings 100 60 800 A A A 10 ms (50 Hz), sine 8.3 ms (60 Hz), sine 500 540 A A TVJ = 150°C; t = 10 ms (50 Hz), sine

lh5s4

Abstract: LH537 lh5s4p lh5s4R lh5s46 LH538 44SOP lh533200 LH5s 5g85
Contextual Info: MASK ROM ☆ New product ★ • M Capacity ASK F O M S Bit Pinout* configuration Model No. LH53V4T00E J J x8 4M x 16 x 8/ x 16 x8 8M x 8/ x 16 LH53V4ROOAN/AT LH53V4R00N/T J J J LH53V4YG0N/E LH53H4100D/N LH534700D/N LH534R00BD/BN LH53V4B00T J J F F LH534A00T

Contextual Info: n ix Y S Fast Recovery Epitaxial Diode FRED v V rrm V V ¥ rsm 640 640 DSEI8 IFAVM vrRRM t. A T yp e 600 600 / \ \ C 8A 600 V 35 ns TO-220 AC DSEI 8-06A m DSEI 8-06A DSEI 8-06AS A = Anode, C = Cathode TO-263 AAk DSEI 8-06AS S ym bo l T e s t C o n d itio n s

dsei 31-06c

Contextual Info: Fast Recovery Epitaxial Diode FRED Type 440 640 400 600 Symbol LT— I <H-H- 1-0 DSEI 2x 30-04C DSEI 2x 31-04C DSEI 2x 30-06C DSEI 2x 31-06C Test Conditions DSEI 2x 30 DSEI 2x 31 Maximum Ratings (per diode) ^FRM TVJ T\um Tc = 85°C; rectangular, d = 0.5

30-04A

Abstract: 30-06A C160 DSEI30 DSEI 30-06A ixys dsei
Contextual Info: MbflbEEb DDOlbBE RbQ * I X Y □IXYS Fast Recovery Epitaxial Diode v V 4 40 5 40 640 400 50 0 6 00 D S E I 3 0 -0 5A Test co n ditio n s ' frm T VJ Tc lp l FSJ T VJ = 45°C ; fl*dt 70 37 375 A A A t = 10 m s (50 Hz , sine t = 8 .3 m s (60 Hz), sine 300 320

digitrip 310 time curve

Abstract: kw3400F kw3400 HLW3630F Cutler-Hammer Digitrip RMS 310 rating plug HKW3400F Cutler-Hammer Digitrip RMS 310 LSG 50 HNW3125T33W Cutler-Hammer HMCP Cutler-Hammer Digitrip RMS 310
Contextual Info: Contents Loading. Cutler-Hammer Moulded Case Circuit Breakers 16-2500 Amperes for IEC 60947-2 Applications February 2001 Cutler-Hammer Frame Sizes G through R Contents Page Standards . . . . . . . . . . . . . . . . . . . . 1 General Information . . . . . . . . . . 2-3

IXYS DSEI 2X121

Abstract: 121-02a diode UM3512 121-02A fast soft recovery diode
Contextual Info: Fast Recovery Epitaxial Diode FRED v RSM V rrm V V 200 200 DSEI 2x121 > Type * DSEI 2x 121-02A Symbol Test Conditions ^FRMS ^FH M TVJ "^VJM Tc = 70°C; rectangular, d = 0.5 tp < 10 |xs; rep. rating, pulse width limited by TVJM ^FSM TVJ = 45°C; U »

Contextual Info: Common Cathode Fast Recovery Epitaxial Diode FRED vt r s u VRFM V V 200 200 200 200 DSEK 60 Ì favm V rrm t rr 2x 34 A 200 V — 35 ns = TO-247 AD Type ISOPLUS 247 Version A Version AR A C A DSEK 60-02A DSEK 60-02AR C(TAB) A = Anode, C = Cathode Maximum Ratings per leg