LOW POWER PNP Search Results

trasistor

Abstract: 2SB1465 NEC RELAY nec 5
Contextual Info: DATA SHEET DARLINGTON TRASISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed

Contextual Info: DATA SHEET DARLINGTON TRASISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed

NEC RELAY

Abstract: 2sb146 NEC RELAY nec 5 2SB1465 C11531E NEC semiconductor
Contextual Info: PRELIMINARY DATA SHEET DARLINGTON POWER TRANSISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power transistor developed for low- PACKAGE DRAWING (UNIT: mm)

2SB1087

Contextual Info: Inchange Semiconductor Product Specification 2SB1087 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・High DC current gain ・DARLINGTON APPLICATIONS ・For low frequency power amplifier and low speed power switching applications PINNING

2SB1087

Abstract: TO-220C TO220C
Contextual Info: JMnic Product Specification 2SB1087 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・High DC current gain ・DARLINGTON APPLICATIONS ・For low frequency power amplifier and low speed power switching applications PINNING PIN DESCRIPTION

2SB1087

Contextual Info: SavantIC Semiconductor Product Specification 2SB1087 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·High DC current gain ·DARLINGTON APPLICATIONS ·For low frequency power amplifier and low speed power switching applications PINNING PIN

MJE200

Abstract: MJE210G 1N5825 MJE200G MJE210 MJE210T MJE210TG MSD6100 to225
Contextual Info: MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are Ădesigned for low voltage, low-power, high-gain audio amplifier applications. Features http://onsemi.com 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON

2SB550

Contextual Info: Inchange Semiconductor Product Specification 2SB550 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplification ·For low speed and power switching PINNING see Fig.2

Contextual Info: MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are Ădesigned for low voltage, low-power, high-gain audio amplifier applications. Features http://onsemi.com 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON

MJE243G

Abstract: to225 PD15120 MJE253 MJE253G MJE243 to-225 pd 242
Contextual Info: MJE243 - NPN, MJE253 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON

2SB550

Contextual Info: SavantIC Semiconductor Product Specification 2SB550 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplification ·For low speed and power switching PINNING see Fig.2

mje243

Contextual Info: MJE243 - NPN, MJE253 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. Features http://onsemi.com 4.0 AMPERES POWER TRANSISTORS

MJE130

Abstract: mje135 MJE230 MJE220 MJE221 MJE222 MJE225 MJE231 MJE235 200 watts audio amp power transistors pnp
Contextual Info: MJE220 thru MJE225 NPN SILICON MJE230 thru MJE235 PNP COMPLEMENTARY PLASTIC SILICON POWER TRANSISTORS 4 AMPERE POWER TRANSISTORS . . . designed for low power audio amplifier and low current, high­ speed switching applications. • COMPLEMENTARY SILICON

zero crossing detector in rectifier circuit

Abstract: AN652 MOSFET and parallel Schottky diode synchronous rectifier mosfet 74HC04 APP652 calculating rectifier circuits switching-regulator ic Reduced conduction losses rectifier zero crossing detector mosfet
Contextual Info: Maxim > App Notes > BATTERY MANAGEMENT POWER-SUPPLY CIRCUITS Keywords: Synchronous Rectification Aids Low-Voltage Power Supplies Jan 31, 2001 APPLICATION NOTE 652 Synchronous Rectification Aids Low-Voltage Power Supplies Synchronous rectifiers can improve switching-power-supply efficiency, particularly in low-voltage low-power

MJE243

Abstract: MJE243G 200 watts audio amp power transistors circuit diagram MJE243-D 1N5825 MJE253 MJE253G MSD6100
Contextual Info: MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS

AA3R

Abstract: 2SB772S V/AA3R
Contextual Info: UNISONIC TECHNOLOGIES CO., 2SB772S PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES

MJE243G

Abstract: MJE-253 MJE243 MJE253 1N5825 MJE253G MSD6100 200 watts audio amp power transistors circuit diagram mje253 transistor
Contextual Info: MJE243 − NPN, MJE253 − PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON

MJE200G

Abstract: MJE200 MJE210 MJE210G MJE210T MJE210TG to225
Contextual Info: MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are Ădesigned for low voltage, low-power, high-gain audio amplifier applications. Features 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS, 15 WATTS

2SB772L-T

Contextual Info: UNISONIC TECHNOLOGIES CO., 2SB772 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES

to225

Abstract: MJE182 MJE181 MJE170 MJE171 to-225 MJE182G MJE180G MJE172 MJE180
Contextual Info: MJE170, MJE171, MJE172 PNP , MJE180, MJE181, MJE182 (NPN) Preferred Device Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES POWER TRANSISTORS

Contextual Info: MJE170, MJE171, MJE172 PNP , MJE180, MJE181, MJE182 (NPN) Complementary Plastic Silicon Power Transistors http://onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES POWER TRANSISTORS

2SB772S-T92-B

Abstract: 2SB772S-T92-K 2SD882S 2SB772S 2SB772SL-T92-B 2SB772SL-T92-K transistor T 023
Contextual Info: UNISONIC TECHNOLOGIES CO., 2SB772S PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES

SB2202

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD. SB2202 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR  DESCRIPTION The UTC SB2202 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.

BD787

Abstract: bd788 MSD6100 1N5825
Contextual Info: ON Semiconductort NPN BD787 Complementary Plastic Silicon Power Transistors PNP BD788 . . . designed for lower power audio amplifier and low current, high–speed switching applications. • Low Collector–Emitter Sustaining Voltage — • • 4 AMPERE POWER TRANSISTORS