M27C512 ST Search Results

Contextual Info: p w io M M o n r in t e r M27C512 512K 64K x 8 UV ERASABLE PROM Military • Fast Access Time — M27C512-15 150 ns — M27C512-20 200 ns — M27C512-25 250 ns ■ Two-Line Control ■ CMOS and TTL Compatible ■ Low Power — 30 mA max. Active — 1.0 mA max. Standby

M27C512 SGS-THOMSON

Abstract: E5 marking M27C256B M27C512 M27V512 M27C512 marking QR101
Contextual Info: QUALIFICATION REPORT 256K & 512K bit CMOS-E5 OTP ROM in TSOP28 INTRODUCTION The concerned products to this Qualification Report are: M27C256B-XXNY, M27C512-XXNY, M27V512-XXNY where "XX" is for access time class and "Y" for temperature range. The M27C256B is a 256K bit OTP ROM, organized as 32K x 8 bits. The M27C512 and the

TM27C512

Contextual Info: _ M27C512 512 Kbit 64Kb x8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ FAST ACCESS TIME: 45ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100jiA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V

M27C512

Abstract: PDIP28 PLCC32 M27C512 SGS-THOMSON presto IIB
Contextual Info: M27C512 512K 64K x 8 UV EPROM and OTP EPROM FAST ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING PROGRAMMING TIMES of AROUND 6sec.

Contextual Info: r= J SGS-THOMSON * •7 ^ M27C512 RüiDmoiiLimtôiMDgi CMOS 512K 64K x 8 UV EPROM and OTP ROM ABBREVIATED DATA VERY FAST ACCESS TIME: 60ns COMPATIBLE with HIGH SPEED MICROPRO­ CESSORS, ZERO WAIT STATE LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA

M27C512

Abstract: PDIP28 PLCC32 m27c512 PLCC32 DSA009463 ST m27c512 AN620 datasheet
Contextual Info: M27C512 512 Kbit 64Kb x8 UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIMES of AROUND 6sec.

M27C512

Abstract: PDIP28 PLCC32
Contextual Info: M27C512 512 Kbit 64Kb x8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 45ns ■ LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA 28 28 – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■

m27c512

Abstract: EPROM M27C512 PDIP28 PLCC32
Contextual Info: M27C512 512 Kbit 64Kb x8 UV EPROM and OTP EPROM DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIMES of AROUND 6sec.

M27C512

Abstract: M27C512-20F1 m27c512-25f1 M27C512-12F1 M27C51212X 27C512 SGS-THOMSON
Contextual Info: G ì, SGS-THOMSON M27C512 512K CMOS UV EPROM - OTP ROM • VERY FAST ACCESS TIME : 100 ns. ■ COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE. ■ LOW POWER "CMOS" CONSUMPTION : - Operating current 30mA - Stand by current 200|iA. ■ PROGRAMMING VOLTAGE 12.75V.

EPROM M27C512

Abstract: SGS M27C512 thomson eprom M27C512 PDIP28 PLCC32 m27c4001 m27c512 PLCC32 M27C1024 m27c1001 plcc32
Contextual Info: M27C512 512K 64K x 8 UV EPROM and OTP EPROM FAST ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING PROGRAMMING TIMES of AROUND 6sec.

M27C512

Abstract: PDIP28 PLCC32 m27c512 PLCC32
Contextual Info: M27C512 512K 64K x 8 UV EPROM and OTP EPROM FAST ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING PROGRAMMING TIMES of AROUND 6sec.

m27c512 PLCC32

Abstract: M27C512 PDIP28 PLCC32
Contextual Info: M27C512 512K 64K x 8 UV EPROM and OTP EPROM FAST ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING PROGRAMMING TIMES of AROUND 6sec.

Contextual Info: M27W512 512 Kbit 64Kb x 8 Low Voltage OTP EPROM LOW VOLTAGE READ OPERATION: 2.7V to 3.6V FAST READ ACCESS TIME: – 90ns at VCC = 3.0V to 3.6V – 100ns at VCC = 2.7V to 3.6V PIN COMPATIBLE with M27C512 LOW POWER CONSUMPTION: – 15µA max Standby Current

11PROGRAMMING

Abstract: 4606 IC circuit diagram ad 4606 m27c512 PLCC32 J-STD-020B M27C512 PDIP28 PLCC32 EPROM M27C512
Contextual Info: M27C512 512 Kbit 64K x8 UV EPROM and OTP EPROM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V

m27c512 ic pin diagram function

Contextual Info: M27C512 512 Kbit 64Kb x8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ FAST ACCESS TIME: 45ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 10OjxA ■ PROGRAMMING VOLTAGE: 12.75V±0.25V ■ PROGRAMMING TIMES of AROUND 6sec.

m27c512

Contextual Info: M27C512 512K 64K x 8 UV EPROM and OTP EPROM DATA BRIEFING FAST ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING PROGRAMMING TIMES of AROUND 6sec.

AI00738B

Contextual Info: M27W512 512 Kbit 64Kb x 8 Low Voltage OTP EPROM • LOW VOLTAGE READ OPERATION: 2.7V to 3.6V ■ FAST READ ACCESS TIME: - 90ns at Vcc = 3.0V to 3.6V - 100ns at Vcc = 2.7V to 3.6V ■ PIN COMPATIBLE with M27C512 ■ LOW POWER CONSUMPTION: - 15(xA max Standby Current

m27c512 ic pin diagram function

Abstract: ST m27c512
Contextual Info: SGS-THOMSON D M & iM M 0 g§ M27C512 CMOS 512K (64K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 80ns * COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|xA

SGS M27C512

Abstract: EPROM M27C512 M27C512 SGS-THOMSON M27C512 PDIP28 PLCC32
Contextual Info: M27C512 512K 64K x 8 UV EPROM and OTP ROM VERY FAST ACCESS TIME: 60ns COMPATIBLE with HIGH SPEED MICROPROCESSORS, ZERO WAIT STATE LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED

1N914

Abstract: M27C512 M27W512 PLCC32 M27C512 ST
Contextual Info: M27W512 512 Kbit 64 Kbit x8 low-voltage OTP EPROM Features • 2.7 to 3.6 V supply voltage in read operation ■ Access time: 100 ns ■ Pin compatibility with M27C512 ■ Low power consumption – 15 µA max Standby current – 15 mA max Active current at 5 MHz

M27C512

Abstract: 4606 IC circuit diagram PDIP28 PLCC32
Contextual Info: M27C512 512 Kbit 64Kb x8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 45ns ■ LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA 28 28 – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■

Contextual Info: M27C512 512 Kbit 64Kb x8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 45ns ■ LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA 28 28 – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■

EPROM M27C512

Abstract: M27C512 PDIP28 PLCC32
Contextual Info: M27C512 512 Kbit 64Kb x8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 45ns ■ LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA 28 28 – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■

M27C512

Abstract: PDIP28 PLCC32
Contextual Info: M27C512 512 Kbit 64Kb x8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 45ns ■ LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA 28 28 – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■